Search results for "Leak"
showing 10 items of 244 documents
Incident angle effect on heavy ion induced reverse leakage current in SiC Schottky diodes
2016
Heavy-ion induced degradation in the reverse leakage current of SiC Schottky power diodes shows distinct dependence on the angle of incidence. TCAD simulations have been used to study the physical mechanisms involved.
Improvement of IPMSM performance through a mixed radial-tangential rotor structure
2010
In this paper an IPMSM (Interior Permanent Magnet Synchronous Motor) rotor configuration optimization is proposed in order to increase the performances in terms of torque, limiting at the same time the rotor leakage flux. The final mixed radial and tangential rotor configuration here proposed and described determines a reduction in PM material quantity of about 25% compared to a tangential IPMSM one with the same dimension and weight, together with an increase of the motoring torque of about 50%. Some simulation carried out by using a FEM software and a comparative analysis with two traditional IPMSMs rotor configurations show that a significant improvement can be achieved with limited chan…
Long-term sealing ability of GuttaFlow versus Ah Plus using different obturation techniques.
2010
Objective. To compare the long-term sealing ability of GuttaFlow® using different obturation techniques. Study Design. Three hundred teeth, prepared with a crown-down technique, were divided into thirty experimental groups (n=10) to evaluate the apical and coronal leakage, at 3, 30 and 120 days, of lateral compaction gutta-percha + AH Plus?, lateral compaction gutta-percha + GuttaFlow®, single cone + AH Plus?, single cone + GuttaFlow®, and GuttaFlow® only. Results. Both coronal and apical leakage, at the three times of measurement, no significant differences were found among GuttaFlow® + lateral compaction gutta-percha and GuttaFlow® + single cone groups, whereas the only GuttaFlow® reached…
Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs
2019
GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters, where high frequencies and voltages are also needed. Its wide band gap (WBG), large breakdown electric field, and thermal stability improve actual silicon performances. However, at the moment, GaN HEMT technology suffers from some reliability issues, one of the more relevant of which is the dynamic on-state resistance (R) regarding power switching converter applications. In this study, we focused on the drain-to-source on-resistance (R) characteristic…
Sealing ability of lateral compaction and tapered single cone gutta-percha techniques in root canals prepared with stainless steel and rotary nickel …
2011
Objectives: The aim of this study was to evaluate the sealing ability of lateral compaction and tapered single cone gutta-percha techniques in root canals prepared with stainless steel and rotary nickel titanium root canal instruments by fluid filtration method. Study design: The root canals were prepared with stainless steel (SS) and nickel titanium (NiTi) instruments. The canals prepared with SS were obturated with lateral compaction technique using .02 tapered cones and the canals prepared with NiTi instruments were obturated with lateral compaction technique using .02 tapered cones or 06 tapered single cones. The amount of leakage was evaluated by fluid filtration model. The results wer…
Suppression of leakage currents in GaN-based LEDs induced by reactive-ion etching damages
2008
Forward and reverse leakage currents in GaN/InGaN multi-quantum well light-emitting diodes (LEDs) are caused by reactive-ion etching (RIE) damages during device patterning. A method to recover the damaged surfaces, based on a chemical etch in KOH: ethylene-glycol is described. Leakage currents decrease of more than a factor of 10 and are completely suppressed in most of devices.
Multilayer (Al,Ga)N Structures for Solar-Blind Detection
2004
We report on solar-blind metal-semiconductor-metal (MSM) detectors fabricated on stacks of (Al,Ga)N layers with different Al mole fraction. These structures were grown by molecular beam epitaxy on sapphire substrates to allow backside illumination and a low-temperature GaN buffer layer. They consist of a 0.3-0.4-/spl mu/m active layer grown on a thick (Al,Ga)N window layer (/spl ap/1 /spl mu/m) that is transparent at the wavelength of interest. Different Al contents were used in the window layer. We observed that, in general, samples with a high Al content were cracked, which is explained in terms of mechanical strain. MSM photodetectors fabricated on these samples showed large leakage curr…
Comparative evaluation of the apical sealing ability of a ceramic based sealer and MTA as root-end filling materials : an in-vitro study
2017
Background The present study was aimed to evaluate and compare the apical sealing ability of two endodontic root-end filling materials namely, iRoot SP (ceramic based) and ProRoot MTA using the bacterial leakage system. Material and methods A total of fifty recently extracted, single rooted teeth with a single straight canal were selected for the study. The teeth were chemo mechanically prepared. The apical 3mm of the root was resected and root end cavities were prepared. The teeth were randomly divided into two groups of twenty teeth each for the experimental root end filling materials namely, iRoot SP and ProRoot MTA. A two-chamber model was constructed using pippeter tips and plastic via…
Evaluation of the apical sealing ability and adaptation to the dentin of two resin-based Sealers: An in vitro study
2013
Aim: To quantitatively evaluate the apical sealing ability and adaptation of two resin-based sealers to dentin. Materials and Methods: Fifty freshly extracted mandibular first premolars were taken and sectioned at the cemento-enamel junction. Thirty teeth were subjected to a leakage study by the resin infiltration method with two groups of 10 teeth each. Group I teeth were obturated with methacrylate resin-based sealer (EnoRez) and Group II teeth were obturated with epoxy resin-based sealer (AH Plus). The remaining 10 teeth were used as controls (positive and negative of five teeth each). Twenty teeth were divided into two groups and obturated as in the leakage study and subjected to a scan…