Search results for "Logic gate"

Multivalued and Reversible Logic Gates Implemented with Metallic Nanoparticles and Organic Ligands

2010

Electrochemical Tantalum Oxide for Resistive Switching Memories

2017

Redox-based resistive switching memories (ReRAMs) are strongest candidates for the next-generation nonvolatile memories fulfilling the criteria for fast, energy efficient, and scalable green IT. These types of devices can also be used for selector elements, alternative logic circuits and computing, and memristive and neuromorphic operations. ReRAMs are composed of metal/solid electrolyte/metal junctions in which the solid electrolyte is typically a metal oxide or multilayer oxides structures. Here, this study offers an effective and cheap electrochemical approach to fabricate Ta/Ta2O5-based devices by anodizing. This method allows to grow high-quality and dense oxide thin films onto a metal…

Assessing Radiation Hardness of SIC MOS Structures

2018

It is widely known that devices based on wide gap semiconductors show potential benefits in terms of saving mass, increasing power densities compared with standard Silicon ones [1]. The higher operating temperatures these components can withstand can also reduce the power budget currently used for cooling down power electronics. These factors are critical in space applications where, for example SiC devices are very promising. However, in this field reliability is a paramount requirement, and radiation conditions can compromise the usage of these new technologies.

High-Speed Memory from Carbon Nanotube Field-Effect Transistors with High-κ Gate Dielectric

2009

We demonstrate 100 ns write/erase speed of single-walled carbon nanotube field-effect transistor (SWCNT-FET) memory elements. With this high operation speed, SWCNT-FET memory elements can compete with state of the art commercial Flash memories in this figure of merit. The endurance of the memory elements is shown to exceed 104 cycles. The SWCNT-FETs have atomic layer deposited hafnium oxide as a gate dielectric, and the devices are passivated by another hafnium oxide layer in order to reduce surface chemistry effects. We discuss a model where the hafnium oxide has defect states situated above, but close in energy to, the band gap of the SWCNT. The fast and efficient charging and discharging…

A Comparative Performance Study of a 1200 V Si and SiC MOSFET Intrinsic Diode on an Induction Heating Inverter

2014

This paper presents a comparison of the behavior of the intrinsic diode of silicon (Si) and silicon carbide (SiC) MOSFETs. The study was done for 1200 V Si and SiC MOSFETs. The data sheet from manufacturers shows the characteristics of MOSFET' intrinsic diode when gate source voltage (VGS) is 0 V. There are applications where the MOSFET' intrinsic diode is used while VGS is different than 0 V. One of these applications is induction heating, where depending on the load and the regulation system, the diode can conduct a significant part of the inverter current. In most applications which use the MOSFET' intrinsic diode, the turn ON of the intrinsic diode happens at VGS = 0 V. After a blanking…

Boolean operations mediated by an ion-pair receptor of a multi-readout molecular logic gate

2013

A heteroditopic BODIPY dye that performs all basic Boolean operations with a cation (K+) and an anion (F-) as inputs and absorption, transmission and fluorescence as outputs is described. The molecular logic gate can also act as a digital comparator between the inputs.

Molecular Switching, Logics, and Memories

2013

The concepts of molecular switch, molecular logics and memories are intimately related. In this work a review of these three topics is given. While the main examples concern the field of inorganic chemistry, in a few cases organic systems are presented to better illustrate the concepts. The basic notions of the logics gates usually used by the nowadays computers is presented and the modus operandi to transpose these concepts to the molecular level is discussed. Examples of switches driven by external stimuli such as light-induced, metal-ion, redox, photobistable, and complexation–decomplexation are described in this chapter. The extension of switches working in solution to solid devices are…

Asymmetric nanopore rectification for ion pumping, electrical power generation, and information processing applications

2011

Single-track, asymmetric nanopores can currently be functionalised with a spatially inhomogeneous distribution of fixed charges and a variety of pore tip shapes. Optimising the asymmetric nanopore characteristics is crucial for practical applications in nanofluidics. We have addressed here this question for three cases based on different input/output chemical and electrical signals: (i) ion pumping up a concentration gradient by means of a periodic, time-dependent bias potential, (ii) information processing with a single nanopore acting as the nanofluidic diode of a logic gate, and (iii) electrical energy harvesting using a nanopore that separates two solutions of different salt concentrati…

Nanorings driven by strong laser fields: dynamics and applications

A window amplitude discriminator with adjustable upper and lower thresholds

1976

An amplitude window discriminator is described which permits selection of spikes from a multi-unit recording, provided the signal-to-noise ratio is high enough. The device can be built at relatively low cost and time. The circuitry permits analysis of the positive or the negative deflections of the recorded signals. In Part One of the circuitry, the signals are pre-amplified and may be inverted in polarity. In Part Two, the pulses are compared to a variable lower threshold voltage, and low amplitude noise is eliminated. Part Three depicts a logic circuit for elimination of disturbing high-amplitude signals, whose output delivers digital pulses, each corresponding to an original signal (e.g.…