Search results for "MAGNETORESISTANCE"
showing 10 items of 173 documents
MgO Magnetic Tunnel Junction Electrical Current Sensor With Integrated Ru Thermal Sensor
2013
Full Wheatstone bridge electrical current sensor incorporating 114 MgO-based magnetic tunnel junction elements (3 × 30 μm2) connected in series was produced for improved electrical robustness. To that end, magnetic tunnel junctions with R × A ~7 KΩ μm2 tunneling magnetoresistance of 200%, were produced. The sensor was designed with an integrated Ru thin film resistive thermal detector (RTD) for temperature drift monitoring and compensation. In order to achieve a full bridge signal, a U-shaped copper trace was placed under a printed circuit board (PCB) specifically designed for this type of device. The resulting device exhibit sensitivities of 63.9 V/Oe/A in a 75 Oe linear range biased with …
Current-induced domain wall motion in nanoscale ferromagnetic elements
2011
The manipulation of a magnetic domain wall (DW) by a spin polarized current in ferromagnetic nanowires has attracted tremendous interest during the last years due to fundamental questions in the fields of spin dependent transport phenomena and magnetization dynamics but also due to promising applications, such as DW based magnetic memory concepts and logic devices. We comprehensively review recent developments in the field of geometrically confined domain walls and in particular current induced DW dynamics. We focus on the influence of the magnetic and electronic transport properties of the materials on the spin transfer effect in DWs. After considering the different DW structures in ferrom…
Large Conductance Switching in a Single-Molecule Device through Room Temperature Spin-Dependent Transport
2016
Controlling the spin of electrons in nanoscale electronic devices is one of the most promising topics aiming at developing devices with rapid and high density information storage capabilities. The interface magnetism or spinterface resulting from the interaction between a magnetic molecule and a metal surface, or vice versa, has become a key ingredient in creating nanoscale molecular devices with novel functionalities. Here, we present a single-molecule wire that displays large (>10000%) conductance switching by controlling the spin-dependent transport under ambient conditions (room temperature in a liquid cell). The molecular wire is built by trapping individual spin crossover Fe-II comple…
Magnetic domain-wall racetrack memory for high density and fast data storage
2012
The racetrack memory device is a new concept of Magnetic RAM (MRAM) based on controlling domain wall (DW) motion in ferromagnetic nanowires. It promises ultra-high storage density thanks to the possibility to store multiple narrow DWS per memory cell. By using read and write heads based on magnetic tunnel junctions (MTJ) with perpendicular magnetic anisotropy (PMA) fast data access speed can also be achieved. Thereby the racetrack memory can be used as universal storage to address both embedded and standalone applications. In this paper, we present the device physics, integration circuit and architecture designs of a racetrack memory based on MTJs with PMA. Mixed SPICE simulations at 65 nm …
Strain-Controlled Giant Magnetoresistance in Spin Valves Grown on Shape Memory Alloys
2019
We report a strain-mediated giant magnetoresistance (GMR) in spin valves (SPVs) grown on shape memory alloys (SMAs). The SPVs with a stacking structure of Al2O3/Co90Fe10/Cu/Co90Fe10/IrMn/Pt were de...
Solid-State Analog of an Optical Interferometer
2004
To some extend one may treat a metal ring with two probes as a solid-state analog of an optical interferometer. One node can be considered as a beam splitter (bi-prism, for example), and the electric current at the other node as an equivalent to a light intensity of an interference pattern formed at a screen. In optics, to obtain a stationary pattern one should use a monochromatic source of radiation, as afterwards in a conventional passive media (i.e. air) the phase of the radiation is preserved. On the contrary, in solids the phase of a conducting electron wavefunction is randomly altered due to inelastic collisions (mainly phonons at high temperatures). Hence, to satisfy the condition of…
Giant negative magnetoresistance in GdI2
2000
Abstract GdI 2 is a layered d 1 compound which is isostructural with and nominally isoelectronic to the superconductors 2H–TaS 2 and 2H–NbSe 2 . GdI 2 orders ferromagnetically at 276(2) K and displays large negative magnetoresistance ∼70% at 7 T close to room temperature. At 10 K the saturation magnetization is 7.33(5) μ B in good agreement with the value predicted from spin polarized band structure calculations.
Giant Negative Magnetoresistance in GdI2: Prediction and Realization
1999
The electronic structure of the layered d1 compound GdI2 has been examined systematically in view of its relation to other layered d1 systems including superconducting and isostructural 2H-TaS2 and 2H-NbSe2. A van Hove type instability is evident in suitable representations of the Fermi surface. The presence of the half-filled and magnetic 4f level should preclude the possibility of superconductivity. Instead GdI2 orders ferromagnetically at 290(5) K and displays large negative magnetoresistance ≈70% at 7 T close to room temperature. This finding provides support to the idea that materials can be searched rationally for interesting properties through high level electronic structure calculat…
A novel paramagnetic molecular superconductor formed by bis(ethylenedithio)tetrathiafulvalene, tris(oxalato)ferrate(iii) anions and bromobenzene as g…
2005
The new paramagnetic molecular superconductor ET4[(H3O)Fe(C2O4)3]·C6H5Br (1) (Tc = 4.0 K) contains layers of superconducting ET donors alternating with paramagnetic hexagonal layers formed by (H3O)+, [Fe(C2O4)3]3− and guest C6H5Br molecules located in the hexagonal cavities. Conductivity measurements show metallic behavior from room temperature with a minimum in the resistivity at ca. 50 K followed by a smooth increase and a sharp drop in the resistivity with an onset at 4.0 K and a zero resistance at ca. 1.0 K. Magnetoresistance measurements indicate that Hc1 is about 7 mT and that Hc2 is very anisotropic (Hc2⊥ ≥ 5.5 T and Hc2|| ≈ 0.5 T). Magnetic susceptibility measurements show the expec…
Preparation, scaling behavior of activation energy, Hall effect, and flux-flow anisotropy of (Hg0.9Re0.1)Ba2CaCu2O6+δHTS thin films
2004
Abstract We have prepared fully textured (Hg0.9Re0.1)Ba2CaCu2O6+δ (HgRe-1212) thin films by pulsed laser deposition (PLD) and post-annealing. The films exhibit sharp superconducting transitions at Tc=124 K with transition width ΔTc≃2 K. Conditions for reproducible film preparation have been found. The resistive transitions have been investigated in magnetic fields up to 8 T (parallel to the c-axis) and 10 T (perpendicular to the c-axis). We have determined the activation energy of thermally activated flux-motion for both magnetic field orientations. The Hall resistivity (ρxy) of HgRe-1212 superconductor thin films has been measured in the ab-plane at 8 T. In the mixed state a power-law beha…