Search results for "MAGNETORESISTANCE"
showing 10 items of 173 documents
Magnetic field dependent thermal conductance in La0.67Ca0.33MnO3
2015
Abstract Using the differential 3 ω technique we measured the low-temperature out-of-plane thermal conductance of heteroepitaxial thin film La0.67Ca0.33MnO3 (LCMO). The magnetic field dependence of the thermal conductance reached values of up to 23%. The effect was observed to be largest in the vicinity of the metal–insulator transition, since the enhancement in thermal conductance is triggered by the colossal magnetoresistance effect increasing the electronic contribution to the thermal conductance. The point of the maximal change was adjusted by post-annealing the samples in an oxygen atmosphere. Samples with a higher transition temperature and lower epitaxial strain displayed a lower mag…
Spin polarized tunneling at room temperature in a Heusler compound-a non-oxide material with a large negative magnetoresistance effect in low magneti…
2003
Summary form only given. Materials which display large changes in resistivity in response to an applied magnetic field (magnetoresistance) are currently of great interest due to their potential for applications in magnetic sensors, magnetic random access memories, and spintronics-a new kind of electronics based on spin instead of charge. Although ferromagnetic manganites show colossal magnetoresistance (CMR) effects around their Curie temperature, the low field and nearly temperature independent magnetoresistance properties important for spintronics are found only at low temperatures. Guided by striking features in the electronic structure of several magnetic compounds, we prepared the Heus…
Large Dzyaloshinskii-Moriya interaction and room-temperature nanoscale skyrmions in CoFeB/MgO heterostructures
2021
Summary Magnetic skyrmions in heavy metal (HM)/CoFeB/MgO structures are of particular interest for skyrmion-based magnetic tunnel junction (MTJ) devices because of their reliable generation, stability, and readout through purely electrical methods. To optimize the properties, such as stability, a strong Dzyaloshinskii-Moriya interaction (DMI) is required at room temperature. Here, using first-principles calculations, we demonstrate that huge DMI can be obtained in Ir/CoFe structures with an Fe-terminated configuration. Moreover, Brillouin light-scattering measurements show that indeed Ta/Ir/Co20Fe60B20/MgO thin films with perpendicular magnetic anisotropy exhibit a large DMI value (1.13 mJ/…
Magnetoresistance and Phase Diagram of Thin-Film UNi2Al3
2011
We study the dc resistivity of UNi2Al3 thin films as a function of temperature and magnetic field. We focus on the temperature range around the antiferromagnetic transition (TN \approx 4 K in zero applied field). From a clear signature of TN in the dc resistance along the crystallographic a-direction, we extract the shape of the magnetic phase diagram. Here we find quantitative differences in comparison to previous studies on bulk crystals.
Tunable Sign Change of Spin Hall Magnetoresistance in Pt/NiO/YIG Structures
2017
Spin Hall magnetoresistance (SMR) has been investigated in Pt/NiO/YIG structures in a wide range of temperature and NiO thickness. The SMR shows a negative sign below a temperature that increases with the NiO thickness. This is contrary to a conventional SMR theory picture applied to the Pt/YIG bilayer, which always predicts a positive SMR. The negative SMR is found to persist even when NiO blocks the spin transmission between Pt and YIG, indicating it is governed by the spin current response of the NiO layer. We explain the negative SMR by the NiO "spin flop" coupled with YIG, which can be overridden at higher temperature by positive SMR contribution from YIG. This highlights the role of m…
Electrical detection of the spin reorientation transition in antiferromagnetic TmFeO3 thin films by spin Hall magnetoresistance
2021
$\mathrm{Tm}\mathrm{Fe}{\mathrm{O}}_{3}$ (TFO) is a canted antiferromagnet that undergoes a spin reorientation transition (SRT) with temperature between 82 and 94 K in single crystals. In this temperature region, the N\'eel vector continuously rotates from the crystallographic $c$ axis (below 82 K) to the $a$ axis (above 94 K). The SRT allows for a temperature control of distinct antiferromagnetic states without the need for a magnetic field, making it apt for applications working at terahertz frequencies. For device applications, thin films of TFO are required as well as an electrical technique for read-out of the magnetic state. Here, we demonstrate that orthorhombic TFO thin films can be…
Large Tunneling Anisotropic Magneto-Seebeck Effect in a CoPt|MgO|Pt Tunnel Junction
2014
We theoretically investigate the Tunneling Anisotropic Magneto-Seebeck effect in a realistically-modeled CoPt|MgO|Pt tunnel junction using coherent transport calculations. For comparison we study the tunneling magneto-Seebeck effect in CoPt|MgO|CoPt as well. We find that the magneto-Seebeck ratio of CoPt|MgO|Pt exceeds that of CoPt|MgO|CoPt for small barrier thicknesses, reaching 175% at room temperature. This result provides a sharp contrast to the magnetoresistance, which behaves oppositely for all barrier thicknesses and differs by one order of magnitude between devices. Here the magnetoresistance results from differences in transmission brought upon by changing the tunnel junction's mag…
Magnetoelectric properties of epitaxialFe3O4thin films on (011) PMN-PT piezosubstrates
2015
We determine the magnetic and magnetotransport properties of 33 nm thick ${\mathrm{Fe}}_{3}{\mathrm{O}}_{4}$ films epitaxially deposited by rf-magnetron sputtering on unpoled (011) ${[{\mathrm{PbMg}}_{1/3}{\mathrm{Nb}}_{2/3}{\mathrm{O}}_{3}]}_{0.68}\ensuremath{-}{[{\mathrm{PbTiO}}_{3}]}_{0.32}$ (PMN-PT) substrates. The magnetoresistance (MR), as well as the magnetization reversal, strongly depend on the in-plane crystallographic direction of the epitaxial (011) ${\mathrm{Fe}}_{3}{\mathrm{O}}_{4}$ film and strain. When the magnetic field is applied along [100], the magnetization loops are slanted and the sign of the longitudinal MR changes from positive to negative around the Verwey transiti…
Spintronics and Nanomemory Systems
2017
The chapter presents and explains the possibilities of CNT forest growth on Fe–Pt nanoparticles for the magnetic nanomemory. The magnetoresistance phenomena – giant magnetoresistance and tunnelling magnetoresistance (GMR and TMR) – for nanomemory devices are based on CNTs of various morphologies (i.e. various chiralities, diameters). It includes metal- and semiconductor-like CNTs which can be considered as alternative variants for electromagnetic nanosensoring and magnetic nanomemory. The chapter also presents simulations of Fe–Pt magnetically disordered nanodrops, as well as spin transport models.
Spin state of a single-molecule magnet (SMM) creating long-range ordering on ferromagnetic layers of a magnetic tunnel junction – a Monte Carlo study
2021
Paramagnetic single-molecule magnets (SMMs) interacting with the ferromagnetic electrodes of a magnetic tunnel junction (MTJ) produce a new system. The properties and future scope of new systems differ dramatically from the properties of isolated molecules and ferromagnets. However, it is unknown how far deep in the ferromagnetic electrode the impact of the paramagnetic molecule and ferromagnet interactions can travel for various levels of molecular spin states. Our prior experimental studies showed two types of paramagnetic SMMs, the hexanuclear Mn6 and octanuclear Fe–Ni molecular complexes, covalently bonded to ferromagnets produced unprecedented strong antiferromagnetic coupling between …