Search results for "Magnetism"

showing 10 items of 1934 documents

Tetragonal Heusler Compounds for Spintronics

2013

With respect to the requirements of spin torque transfer (STT) materials, one the most promising materials families are the tunable tetragonal Heusler compounds based on Mn2YZ (Y=Co,Fe,Ni,Rh,...; Z=Al, Ga, Sn). They form the inverse cubic Heusler structure with three distinct magnetic sublattices, which allows a fine tuning of the magnetic properties. Starting with the stoichiometric Mn3Ga compound, we explored the complete phase diagram of Mn3-xYxZ (Y=Co, Fe, Ni and Z=Ga ). All series exhibit thermally stable magnetic properties. As we demonstrate, Mn3-xFexGa series, which are tetragonal over the whole range of compositions, are good as hard magnets, whereas magnetically more weak Mn3-xNix…

010302 applied physicsMaterials scienceCondensed matter physicsSpintronicsSpin-transfer torque02 engineering and technologyCrystal structure021001 nanoscience & nanotechnology01 natural sciencesElectronic Optical and Magnetic MaterialsTetragonal crystal systemFerromagnetismMagnet0103 physical sciencesElectrical and Electronic Engineering0210 nano-technologyStoichiometryPhase diagramIEEE Transactions on Magnetics
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EPR in glass ceramics

2019

Abstract The development of novel materials requires a profound understanding of the relationship between a material's performance and its structural properties. Electron paramagnetic resonance (EPR) is a well-established technique for a direct detection and identification of paramagnetic defects in solids. This chapter provides an overview of the applicability of continuous wave EPR spectroscopy in the studies of glass ceramics focusing on transition metal (Mn2 +, Cu2 +, Cr3 +) and rare earth (Gd3 +, Eu2 +, Er3 +, Yb3 +) ion local structure analysis. EPR spectra features of the above-mentioned paramagnetic probes in glasses and glass ceramics are compared and discussed in detail. The chapt…

010302 applied physicsMaterials scienceGlass-ceramic02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesSpectral lineIonlaw.inventionParamagnetismTransition metallawvisual_art0103 physical sciencesvisual_art.visual_art_mediumContinuous wavePhysical chemistryCeramic0210 nano-technologyElectron paramagnetic resonance
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Tuning the electronic and magnetic properties of 2D g-GaN by H adsorption: An ab-initio study

2019

Abstract We have theoretically studied the structural, electronic and magnetic properties of the hydrogen adsorption on a honeycomb gallium-nitride two-dimensional monolayer (2D g-GaN). Results indicate that the band gap energy can be systematically tuned by the hydrogen coverage on the 2D g-GaN in the diluted limit. In addition, a total magnetic moment can be induced in the 2D g-GaN by hydrogen adsorption due to s-p interaction and band structure effects. Although hydrogen adsorption on top of nitrogen atoms shows the most stable energy in the 2D g-GaN, the most stable ferromagnetism -with a nonzero magnetic moment-is obtained when hydrogen is adsorbed on top of Ga atoms. These results ind…

010302 applied physicsMaterials scienceHydrogenSpintronicsMagnetic momentBand gapAb initiochemistry.chemical_element02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesElectronic Optical and Magnetic MaterialsAdsorptionchemistryFerromagnetismChemical physics0103 physical sciencesElectrical and Electronic Engineering0210 nano-technologyElectronic band structurePhysica B: Condensed Matter
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Neutron diffraction study of microstructural and magnetic effects in fine particle NiO powders

2016

Nickel oxide powders with grain sizes ranging from 100 to 1500 nm have been studied by high-resolution neutron diffraction. We have found that the atomic structure, the antiferromagnetic ordering, and the value of the nickel magnetic moments inherent in the bulk material of NiO are still preserved and are nearly independent of the average size of the grains. The sizes of the coherently scattering atomic and magnetic domains were estimated independently owing to a complete separation of the nuclear and magnetic peaks in the neutron diffraction patterns. It is shown that the finite-size and surface disorder effects in particles at the submicron scale have a more pronounced influence on the ma…

010302 applied physicsMaterials scienceMagnetic structureMagnetic domainMagnetic momentCondensed matter physicsScatteringMagnetismNickel oxideNeutron diffraction02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesElectronic Optical and Magnetic MaterialsCrystallography0103 physical sciencesParticle0210 nano-technologyphysica status solidi (b)
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Spin–orbit torque driven multi-level switching in He + irradiated W–CoFeB–MgO Hall bars with perpendicular anisotropy

2020

We have investigated the spin–orbit torque-driven magnetization switching in W/CoFeB/MgO Hall bars with perpendicular magnetic anisotropy. He+ ion irradiation through a mask has been used to reduce locally the effective perpendicular anisotropy at a Hall cross. Anomalous Hall effect measurements combined with Kerr microscopy indicate that the switching process is dominated by domain wall (DW) nucleation in the irradiated region followed by rapid domain propagation at a current density as low as 0.8 MA/cm2 with an assisting in-plane magnetic field. Thanks to the implemented strong pinning of the DW at the transition between the irradiated and the non-irradiated region, an intermediate Hall r…

010302 applied physicsMaterials sciencePhysics and Astronomy (miscellaneous)Condensed matter physicsNucleation02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesIonMagnetic fieldMagnetization[SPI]Engineering Sciences [physics]Domain wall (magnetism)Hall effect0103 physical sciencesIrradiation0210 nano-technologyCurrent densityComputingMilieux_MISCELLANEOUS
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Impact of the interplay of piezoelectric strain and current-induced heating on the field-like spin–orbit torque in perpendicularly magnetized Ta/Co20…

2021

Spin–orbit torques (SOTs) are known to be the most efficient way to manipulate the magnetization direction by electrical currents. While, conventionally, one symmetry component of the SOTs, namely, the damping-like torque, was considered to play a primary role, recently, the significance of the other component, the field-like torque, has been revised, owing to the non-trivial dynamics it can induce in heavy metal/ferromagnet multilayers. In this work, we first discuss the unusual behavior of the field-like SOT in a Ta/CoFeB/Ta/MgO multilayer system with a reduced magnetic anisotropy and demonstrate an energy-efficient approach to manipulate the magnitude of the SOT effective fields. Finally…

010302 applied physicsMaterials sciencePhysics and Astronomy (miscellaneous)Field (physics)Condensed matter physicsSpintronics02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesPiezoelectricitySymmetry (physics)Condensed Matter::Materials ScienceMagnetizationMagnetic anisotropyFerromagnetism0103 physical sciencesAstrophysics::Solar and Stellar Astrophysics0210 nano-technologyAnisotropyApplied Physics Letters
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Antiferromagnetic NiO thickness dependent sign of the spin Hall magnetoresistance in γ-Fe 2 O 3 /NiO/Pt epitaxial stacks

2019

We study the spin Hall magnetoresistance (SMR) in epitaxial γ–Fe2O3/NiO(001)/Pt stacks, as a function of temperature and thickness of the antiferromagnetic insulating NiO layer. Upon increasing the thickness of NiO from 0 nm to 10 nm, we detect a sign change of the SMR in the temperature range between 10 K and 280 K. This temperature dependence of the SMR in our stacks is different compared to that of previously studied yttrium iron garnet/NiO/Pt, as we do not find any peak or sign change as a function of temperature. We explain our data by a combination of spin current reflection from both the NiO/Pt and γ-Fe2O3/NiO interfaces and the thickness-dependent exchange coupling mode between the …

010302 applied physicsMaterials sciencePhysics and Astronomy (miscellaneous)MagnetoresistanceCondensed matter physicsNon-blocking I/OYttrium iron garnet02 engineering and technologyAtmospheric temperature range021001 nanoscience & nanotechnologyEpitaxy01 natural scienceschemistry.chemical_compoundReflection (mathematics)chemistry0103 physical sciencesAntiferromagnetism0210 nano-technologySpin (physics)Applied Physics Letters
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2019

We systematically study the pump-wavelength dependence of terahertz pulse generation in thin-film spintronic THz emitters composed of a ferromagnetic CoFeB layer between adjacent nonmagnetic W and Pt layers. We find that the efficiency of THz generation is essentially flat for excitation by 150 fs pulses with center wavelengths ranging from 900 to 1500 nm, demonstrating that the spin current does not depend strongly on the pump photon energy. We show that the inclusion of dielectric overlayers of TiO2 and SiO2, designed for a particular excitation wavelength, can enhance the terahertz emission by a factor of up to two in field.

010302 applied physicsMaterials sciencePhysics and Astronomy (miscellaneous)SpintronicsField (physics)business.industryTerahertz radiationPhysics::Optics02 engineering and technologyDielectricPhoton energy021001 nanoscience & nanotechnology01 natural sciencesCondensed Matter::Materials ScienceWavelengthFerromagnetism0103 physical sciencesOptoelectronics0210 nano-technologybusinessExcitationApplied Physics Letters
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Enhancing domain wall velocity through interface intermixing in W-CoFeB-MgO films with perpendicular anisotropy

2019

We study the influence of He+ irradiation induced interface intermixing on magnetic domain wall (DW) dynamics in W-CoFeB (0.6 nm)-MgO ultrathin films, which exhibit high perpendicular magnetic anisotropy and large Dzyaloshinskii-Moriya interaction (DMI) values. Whereas the pristine films exhibit strong DW pinning, we observe a large increase in the DW velocity in the creep regime upon He+ irradiation, which is attributed to the reduction of pinning centers induced by interface intermixing. Asymmetric in-plane field-driven domain expansion experiments show that the DMI value is slightly reduced upon irradiation, and a direct relationship between DMI and interface anisotropy is demonstrated. …

010302 applied physicsMaterials sciencePhysics and Astronomy (miscellaneous)SpintronicsMagnetic domainCondensed matter physics530 PhysicsPerpendicular magnetic anisotropy02 engineering and technology530 Physik021001 nanoscience & nanotechnology01 natural sciences[SPI]Engineering Sciences [physics]Domain wall (magnetism)Creep[PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]0103 physical sciencesPerpendicular anisotropyIrradiation[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat]0210 nano-technologyAnisotropyComputingMilieux_MISCELLANEOUS
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Half-Heusler compounds: novel materials for energy and spintronic applications

2012

Half-Heusler compounds are an impressive class of materials with a huge potential for different applications such as future energy applications and for spintronics. The semiconducting Heusler compounds can be identified by the number of valence electrons. The band gap can be tuned between 0 and 4 eV by the electronegativity difference of the constituents. Magnetism can be introduced in these compounds by using rare-earth elements, manganese or ‘electron’ doping. Thus, there is a great interest in the fields of thermoelectrics, solar cells and diluted magnetic semiconductors. The combination of different properties such as superconductivity and topological edge states leads to new multifunct…

010302 applied physicsMaterials scienceSpintronicsCondensed Matter::OtherBand gapMagnetismNanotechnology02 engineering and technologyNarrow-gap semiconductorMagnetic semiconductor021001 nanoscience & nanotechnologyCondensed Matter PhysicsThermoelectric materials01 natural sciences7. Clean energyElectronic Optical and Magnetic MaterialsElectronegativityCondensed Matter::Materials Science0103 physical sciencesMaterials ChemistryCondensed Matter::Strongly Correlated ElectronsElectrical and Electronic Engineering0210 nano-technologyValence electronSemiconductor Science and Technology
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