Search results for "Memory"
showing 10 items of 2004 documents
Traces of errors due to single ion in floating gate memories
2008
Single, high energy, high LET, ions impacting on a Floating gate array at grazing or near-grazing angles lead to the creation of long traces of FGs with corrupted information. Every time a FG is crossed by a single ion, it experiences a charge loss which permanently degrades the stored information. If the ion crosses more than one FG, the threshold voltage of all those FGs interested by its track will be degraded.
Key Contributions to the Cross Section of NAND Flash Memories Irradiated With Heavy Ions
2008
Heavy-ion irradiation of NAND flash memories under operating conditions leads to errors with complex, data-dependent signatures. We present upsets due to hits in the floating gate array and in the peripheral circuitry, discussing their peculiarities in terms of pattern dependence and annealing. We also illustrate single event functional interruptions, which lead to errors during erase and program operations. To account for all the phenomena we observe during and after irradiation, we propose an ldquoeffective cross section,rdquo which takes into account the array and peripheral circuitry contributions to the SEU sensitivity, as well as the operating conditions.
Effect of Ion Energy on Charge Loss From Floating Gate Memories
2008
Heavy ions typical of the space environment have energies which exceed by orders of magnitude those available at particle accelerators. In this paper we are irradiating state of the art floating gate memories by using both a medium energy (SIRAD) and a high energy (RADEF) facilities. The corruption of stored information decreases when increasing ion energy. The proposed model deals with the broader track found for higher energy ions. Implications for testing procedures and for reliability considerations are discussed.
Effects of Scaling in SEE and TID Response of High Density NAND Flash Memories
2010
Heavy ion single-event effect (SEE) measurements and total ionizing dose (TID) response for Micron Technology single-level cell 1, 2, 4, 8 Gb commercial NAND flash memory and multi-level cell 8, 16, 32 Gb are reported. The heavy ion measurements were extended down to LET 0.1 MeV-cm2/mg. Scaling effects in SEE and TID response are discussed. Floating gate bit error upset cross section does not scale with feature size at high LETs, except for single-level cell 8 Gb device which is built with 51 nm processes. The threshold LET does not change with scaling. Charge pump TID degradation and standby current improves with scaling. In general, the effect of radiation is either unchanged or is less s…
Direct evidence of secondary recoiled nuclei from high energy protons
2008
The production of secondary recoiled particles from interactions between high energy protons and microelectronics devices was investigated. By using NAND Flash memories, we were able to directly obtain analog information on recoil characteristics. While our results qualitatively confirm the role of nuclear reactions, in particular of those with tungsten, a quantitative model based on Monte Carlo and device-level simulations cannot describe the observed results in terms of recoils from proton-W reactions. © 2006 IEEE.
Observation of high-purity single photons hopping between optical cavities
2014
We experimentally demonstrate high-purity single photons hopping coherently between coupled optical cavities. The system shows high performance also as a controllable single-photon source, which emits single photons with a negative Wigner function.
A theory for long-memory in supply and demand
2004
Recent empirical studies have demonstrated long-memory in the signs of orders to buy or sell in financial markets [2, 19]. We show how this can be caused by delays in market clearing. Under the common practice of order splitting, large orders are broken up into pieces and executed incrementally. If the size of such large orders is power law distributed, this gives rise to power law decaying autocorrelations in the signs of executed orders. More specifically, we show that if the cumulative distribution of large orders of volume v is proportional to v to the power -alpha and the size of executed orders is constant, the autocorrelation of order signs as a function of the lag tau is asymptotica…
Large Time Behavior for Inhomogeneous Damped Wave Equations with Nonlinear Memory
2020
We investigate the large time behavior for the inhomogeneous damped wave equation with nonlinear memory ϕtt(t,&omega
Low Energy Protons at RADEF - Application to Advanced eSRAMs
2014
A low energy proton facility has been developed at RADEF, Jyvskyl, Finland. The proton energy selection, calibration and dosimetry are described. The first experiment with external users was performed using two memory test vehicles fabricated with 28 nm technology. Examples of single event upset measurements in the test vehicles embedded SRAMs (eSRAMs) as a function of proton energy are provided.
Temperature effects on quantum non-Markovianity via collision models
2018
Quantum non-Markovianity represents memory during the system dynamics, which is typically weakened by the temperature. We here study the effects of environmental temperature on the non-Markovianity of an open quantum system by virtue of collision models. The environment is simulated by a chain of ancillary qubits that are prepared in thermal states with a finite temperature $T$. Two distinct non-Markovian mechanisms are considered via two types of collision models, one where the system $S$ consecutively interacts with the ancillas and a second where $S$ collides only with an intermediate system $S'$ which in turn interacts with the ancillas. We show that in both models the relation between …