6533b7d1fe1ef96bd125c2aa

RESEARCH PRODUCT

Key Contributions to the Cross Section of NAND Flash Memories Irradiated With Heavy Ions

S. BeltramiMarta BagatinGiorgio CellereSimone GerardinReno Harboe-sorensenAlessandro PaccagnellaAri VirtanenAngelo Visconti

subject

PhysicsNuclear and High Energy PhysicsHardware_MEMORYSTRUCTURESNAND FlashNAND gateHardware_PERFORMANCEANDRELIABILITYsingle event effectsHeavy ion irradiationradiation effects; single event effects; Floating gate memories; NAND FlashIonNuclear Energy and EngineeringGate arrayFloating gate memoriesradiation effectsElectronic engineeringIrradiationElectrical and Electronic Engineering

description

Heavy-ion irradiation of NAND flash memories under operating conditions leads to errors with complex, data-dependent signatures. We present upsets due to hits in the floating gate array and in the peripheral circuitry, discussing their peculiarities in terms of pattern dependence and annealing. We also illustrate single event functional interruptions, which lead to errors during erase and program operations. To account for all the phenomena we observe during and after irradiation, we propose an ldquoeffective cross section,rdquo which takes into account the array and peripheral circuitry contributions to the SEU sensitivity, as well as the operating conditions.

yearjournalcountryeditionlanguage
2008-12-01IEEE Transactions on Nuclear Science
https://doi.org/10.1109/tns.2008.2007905