Search results for "Mesoscopic System"
showing 10 items of 587 documents
Electron–phonon interaction in a thin Al–Mn film
2006
Abstract Aluminum doped with manganese is an interesting novel material with applications in normal metal–insulator–superconductor (NIS) tunnel junction devices and transition-edge sensors at sub-Kelvin temperatures. We have studied the electron–phonon (e–p) coupling in a thin aluminum film doped with 1% manganese, with a measuring technique based on DC hot-electron effect. The electron temperature was measured with the help of symmetric normal metal–insulator–superconductor tunnel-junction pairs (SINIS-thermometers). Measurements show that the temperature dependence of the e–p interaction is not consistent with existing theories for disordered metals, but follows a higher power law.
Relaxation and decoherence of orbital and spin degrees of freedom in quantum dots
2002
The phonon induced mechanisms of relaxation/decoherence in quantum dots are analysed. A non-perturbative technique - a modification of the Davydov transformation appropriate to the localised particles is applied for solving the electron-phonon eigenvalue problem in a quantum dot at magnetic field presence. The decay rates for polaron relaxation via the anharmonicity induced channel are analysed in details. In particular, it is indicated that previous, of perturbative type, estimations of the anharminicity induced relaxation rates were too severe and after including the coherence effects they are of, at least, one order longer. The process of exciton dressing with phonons is also analysed as…
Cross-phase modulational instability induced by Raman scattering in highly birefringent fiber
2013
We report experimental and theoretical studies of Raman-induced cross-phase modulational instabilities (XPMI) in a high-birefringence, normally dispersive optical fiber. Experimental results reveal that the Raman-Stokes wave, generated by a quasi-CW pump beam, interacts with the latter to create a novel type of XPMI sidebands. These sidebands are characterized by a narrow gain bandwidth. The sideband frequencies are well reproduced by a linear stability analysis as well as by full numerical solutions of the coupled generalized nonlinear Schrödinger equations.
Resonant hyper-Raman scattering in semiconductors
1998
A theoretical model for resonant hyper-Raman scattering by LO phonons is developed, taking into account excitonic effects. The model is valid for energies below and above an allowed absorption edge. The matrix elements corresponding to the exciton-photon and exciton-phonon interactions are derived analytically, and their contributions to the total scattering efficiency are analyzed. The two main electron-phonon interaction mechanisms present in polar semiconductors, deformation potential, and Fr\"ohlich interaction, are considered. It is shown that the one-phonon resonance hyper-Raman scattering mediated by the deformation potential interaction is dipole forbidden, whereas it is allowed whe…
Role of excitons in double Raman resonances in GaAs quantum wells
1996
Raman scattering by longitudinal-optical phonons has been measured in GaAs-AlAs multiple quantum wells at high magnetic fields. Doubly resonant scattering processes are observed at photon energies corresponding to magneto-excitons with different principal quantum numbers for the incoming and outgoing channels. The existence of these initially forbidden scattering processes, their resonance energies, and their relative intensities are correctly reproduced by our theoretical description. The model takes into account the excitonic nature of the intermediate states, as well as scattering processes involving a nonzero in-plane phonon wave vector, which is required to allow inter-Landau level sca…
Renormalization of the Fröhlich constant for electrons in a quantum dot
2002
Recent experimental investigations of far-infrared attenuation in GaAs/InAs quantum dot in magnetic field and measurements of photoluminescence features for smaller pyramid-shape GaAs/InAs quantum dots indicated an enhancement of coupling of longitudinal optical phonons with confined electrons, which manifested itself in a significant increase of the effective Frohlich constant in comparison to its bulk value. We give a simple quasiclassical explanation of this enhancement and relate the renormalization of the Frohlich constant with the dot diameter.
Resonant Rayleigh scattering in quantum well structures
1996
Abstract We report continuous wave experiments on resonant Rayleigh scattering (RRS) performed on high quality GaAs AlGaAs quantum well structures. The simultaneous measurement of the resonant Rayleigh scattering and of the photoluminescence excitation (PLE) allows us to resolve very small differences between the two spectra. We show that, even in very good samples, there is a small but detectable Stokes shift of the RRS profile with respect to the PLE. It is also found that the RRS profile has a smaller linewidth and is sensitive to bound exciton transitions which are not detectable in the PLE. We compare our data with previous findings and discuss possible origins of the Stokes shift.
Exciton kinetics and luminescence in disordered InxGa 1-xP/GaAs quantum wells
2003
Trabajo presentado en el 7th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors, NOEKS 2003, celebrado en Karlsruhe (Alemania), del 23 al 28 de febrero de 2003
Microscopic carrier dynamics in quantum wells modulated by high-frequency lateral fields
2002
Abstract We have investigated the dynamics of photogenerated carriers in GaAs quantum wells under the influence of high-frequency fields produced by metal gratings and by surface acoustic waves (SAW's) using spatially and time-resolved photoluminescence (PL). The frequency and phase of the PL oscillations induced by the high-frequency field yield information about the spatial distribution of the carriers and, in the case of SAW's, about the band-gap modulation induced by the SAW strain.
Exciton fine structure splitting of single InGaAs self-assembled quantum dots
2004
Abstract We show how the resonant absorption of the ground state neutral exciton confined in a single InGaAs self-assembled quantum dot can be directly observed in an optical transmission experiment. A spectrum of the differential transmitted intensity is obtained by sweeping the exciton energy into resonance with laser photons exploiting the voltage induced Stark-shift. We describe the details of this experimental technique and some example results which exploit the ∼1 μeV spectral resolution. In addition to the fine structure splitting of the neutral exciton and an upper bound on the homogeneous linewidth at 4.2 K , we also determine the transition electric dipole moment.