Search results for "Mesoscopic System"
showing 10 items of 587 documents
Reliable signal processing using parallel arrays of non-identical nanostructures and stochastic resonance
2010
In the stochastic resonance (SR) phenomena, the response of a non-linear system to a weak periodic input signal is optimised by the presence of a particular level of noise which enhances signal detection. We explore, theoretically, the influence of thermal noise in arrays of metal nanoparticles functionalised with organic ligands acting as tunnelling junctions, with emphasis on the interplay between the SR phenomena and the nanostructure variability. In this system, the transference of a reduced number of electrons may suffice to implement a variety of electronic functions. However, because nanostructures are expected to show a significant variability in their physical characteristics, it i…
High accuracy Raman measurements using the Stokes and anti-Stokes lines
1997
We show that by measuring the separation between the Stokes and anti-Stokes peaks excited by two different laser lines we obtain a very precise determination of absolute phonon energies. The method is useful for measuring small changes of these energies with strain, temperature, laser power, etc. It doubles the changes and avoids the necessity of using the reference lines in the Raman spectra. The method can be applied for the determination of phonon deformation potentials, for the characterization of strained heteroepitaxial layers, and for micro-Raman analysis of strain in silicon integrated circuits. We give examples of phonon shifts in Si, Ge, GaAs, InAs, and GaP as a function of applie…
Optical switching of quantum states inside self-assembled quantum dots
2008
Abstract Photoluminescence and excitation of photoluminescence spectroscopy have been performed for two kinds of single InAs self-assembled quantum dots grown on GaAs. The presence of unintentional impurities (donors and acceptors) offers the possibility to switch from negative to positively charged excitons by selectively exciting impurity related optical transitions.
Isolated self-assembled InAs/InP(001) quantum wires obtained by controlling the growth front evolution
2007
6 páginas, 5 figuras. In this work we explore the first stages of quantum wire (QWR) formation studying the evolution of the growth front for InAs coverages below the critical thickness, θc, determined by reflection high energy electron diffraction (RHEED). Our results obtained by in situ measurement of the accumulated stress evolution during InAs growth on InP(001) show that the relaxation process starts at a certain InAs coverage θRθR this ensemble of isolated nanostructures progressively evolves towards QWRs that cover the whole surface for θ = θc. These results allow for a better understanding of the self-assembling process of QWRs and enable the study of the individual properties of In…
A hybrid method for calorimetry with subnanoliter samples using Schottky junctions
2007
A μm-scale calorimeter realized by using Schottky junctions as a thermometer is presented. Combined with a hybrid experimental method, it enables simultaneous time-resolved measurements of variations in both the energy and the heat capacity of subnanoliter samples.
Room temperature antiferromagnetic resonance and inverse spin-Hall voltage in canted antiferromagnets
2021
We study theoretically and experimentally the spin pumping signals induced by the resonance of canted antiferromagnets with Dzyaloshinskii-Moriya interaction and demonstrate that they can generate easily observable inverse spin-Hall voltages. Using a bilayer of hematite/heavy metal as a model system, we measure at room temperature the antiferromagnetic resonance and an associated inverse spin-Hall voltage, as large as in collinear antiferromagnets. As expected for coherent spin pumping, we observe that the sign of the inverse spin-Hall voltage provides direct information about the mode handedness as deduced by comparing hematite, chromium oxide and the ferrimagnet yttrium-iron garnet. Our r…
Vanadyl dithiolate single molecule transistors: the next spintronic frontier?
2018
The role of Chemistry in the road towards quantum devices is the design of elementary pieces with a built-in function. A brilliant example is the use of molecular transistors as nuclear spin detectors, which, up to now, has been implemented only on [TbPc$_2$]$^-$. We argue that this is an artificial constraint and critically discuss the limitations of current theoretical approaches to assess the potential of molecules for their use in spintronics. In connection with this, we review the recent progress in the preparation of highly coherent spin qubits based on vanadium dithiolate complexes and argue that the use of vanadyl dithiolates as single molecule transistors to read and control a trip…
Hot-electron noise suppression in n-Si via the Hall effect
2008
We investigate how hot-electron fluctuations in n-type Si are affected by the presence of an intense (static) magnetic field in a Hall geometry. By using the Monte Carlo method, we find that the known Hall-effect-induced redistribution of electrons among valleys can suppress electron fluctuations with a simultaneous enhancement of the drift velocity. We investigate how hot-electron fluctuations in n-type Si are affected by the presence of an intense (static) magnetic field in a Hall geometry. By using the Monte Carlo method, we find that the known Hall-effect-induced redistribution of electrons among valleys can suppress electron fluctuations with a simultaneous enhancement of the drift vel…
Relaxation of Electron Spin during High-Field Transport in GaAs Bulk
2011
A semiclassical Monte Carlo approach is adopted to study the multivalley spin depolarization of drifting electrons in a doped n-type GaAs bulk semiconductor, in a wide range of lattice temperature ($40<T_L<300$ K) and doping density ($10^{13}<n<10^{16}$cm$^{-3}$). The decay of the initial non-equilibrium spin polarization of the conduction electrons is investigated as a function of the amplitude of the driving static electric field, ranging between 0.1 and 6 kV/cm, by considering the spin dynamics of electrons in both the $\Gamma$ and the upper valleys of the semiconductor. Doping density considerably affects spin relaxation at low temperature and weak intensity of the driving electric fiel…
Spin-Based Quantum Information Processing in Magnetic Quantum Dots
2005
We define the qubit as a pair of singlet and triplet states of two electrons in a He-type quantum dot (QD) placed in a diluted magnetic semiconductor (DMS) medium. The molecular field is here essential as it removes the degeneracy of the triplet state and strongly enhances the Zeeman splitting. Methods of qubit rotation as well as two-qubit operations are suggested. The system of a QD in a DMS is described in a way which allows an analysis of the decoherence due to spin waves in the DMS subsystem.