Search results for "Metallurgy"
showing 10 items of 1419 documents
Spontaneous oxygen loading into SiO2 glass by thermal anneal
2004
The interstitial oxygen molecules (O 2 ) in SiO 2 glass were detected down to ∼10 15 cm -3 by photoluminescence of O 2 at 1272nm excited at 765nm by a continuous-wave titanium sapphire laser. It was evidenced that SiO 2 glass thermally annealed in air between 800 and 1100°C spontaneously absorbs ∼10 16 cm -3 of O 2 from the ambient atmosphere. The time-dependent concentration change of the interstitial O 2 allows the determination of both the diffusion coefficient and the solubility of the interstitial O 2 .
Concentration growth and thermal stability of gamma-ray induced germanium lone pair center in Ge-doped sol–gel a-SiO2
2009
Abstract We report an experimental study of the concentration growth by γ-ray irradiation of germanium lone pair center (GLPC) in 10 4 part per million molar Ge-doped sol–gel silica. The data show that γ-ray induced GLPC concentration increases linearly up to ∼5 MGy and then it seems to reach a limit value. In addition to the dose dependence, we have studied the thermal stability of the radiation induced GLPC in ambient atmosphere up to 415 °C. We found that the concentration of this latter GLPC starts to decrease at ∼300 °C, at variance to native GLPC, suggesting that the annealing is related to irradiation products. After the thermal treatments the photoluminescence (PL) activity of the γ…
Thermal stability of gamma-irradiation-induced oxygen-deficient centers in silica
2006
The effects of isochronal thermal treatments on three {gamma}-irradiation-induced point defects, named the E{sup '}, ODC(II), and H(I) centers, are investigated in various types of commercial silica (a-SiO{sub 2}). ODC(II) is investigated by means of photoluminescence spectroscopy, and the H(I) and E{sup '} centers by electron paramagnetic resonance. The annealing processes of the ODC(II) and H(I) center are shown to be independent of each other, and no conversion mechanisms are evidenced. In contrast, a strong similarity is observed between the annealing curves of the ODC(II) and E{sup '} centers. We tentatively ascribe the annealing processes to reactions of the defects with radiolyticall…
Raman and photoluminescence spectroscopy of zinc tungstate powders
2009
ZnWO4 powders, synthesized using co-precipitation technique and annealed in air at different temperatures in the range of 80-800 � C, were studied by Raman and photoluminescence spectroscopy. ZnWO4 single crystal was used for comparison. The interpretation of the observed variations of the Raman spectra and intrinsic photoluminescence band upon annealing is suggested.
Excitonic luminescence in ZnO nanopowders and ceramics
2009
Abstract Fast photoluminescence spectra in the spectral region of 3.1–3.45 eV in ZnO and ZnO:Al ceramics were studied at 14 and 300 K. Ceramics with grains smaller than 100 nm were sintered from nanopowders by high pressure (8 GPa) and low temperature (350 °C). Ceramics with grain sizes 1–5 μm were sintered at 1400 °C. It is shown that excitonic luminescence spectra depend on the ceramics grain size, post preparing annealing and doping. The excitonic luminescence decay time was faster than 2 ns and the afterglow at 30 ns was ∼0.05%.
Annealing-induced Changes in the Electronic and Structural Properties of ZnTe Substrates
2000
The aim of this study is to demonstrate that the electronic and structural properties of II–VI substrates, here ZnTe, can be dramatically affected by thermal heating at temperatures in the range of those typically used in the epitaxial metalorganic chemical vapor deposition processes. Photoluminescence response shows that annealing at these temperatures produces a reduction of the sample crystalline quality, decreasing the free exciton emission relative to the deep level related one. Some factors, like the change in the charge and stress state of dislocations, Cu diffusion, and oxygen incorporation, could be responsible for changes in the substrate properties, which can produce stresses and…
The evolution of the fraction of Er ions sensitized by Si nanostructures in silicon-rich silicon oxide thin films
2009
Photoluminescence (PL) and time-resolved PL experiments as a function of the elaboration process are performed on Er-doped silicon-rich silicon oxide (SRO:Er) thin films grown under NH(3) atmosphere. These PL measurements of the Er(3+) emission at 1.54 microm under non-resonant pumping with the Er f-f transitions are obtained for different Er(3+) concentrations, ranging from 0.05 to 1.4 at.%, and various post-growth annealing temperatures of the layers. High resolution transmission electron microscopy (HRTEM) and energy-filtered TEM (EFTEM) analysis show a high density of Si nanostructures composed of amorphous and crystalline nanoclusters varying from 2.7 x 10(18) to 10(18) cm(-3) as a fun…
Deep center luminescence versus surface preparation of ZnSe single crystals
2001
A close relationship between the photoluminescence emissions labeled Y and S, related to dislocations and extended structural defects, and the preparation of the surface state of ZnSe single crystals before PL (photoluminescence) measurements has been established. The samples were obtained by solid-phase recrystallization under different pressure conditions. An easy method for achieving good quality surfaces with a very significant reduction of such Y and S PL emissions is proposed.
Cathodo- and Photo- Luminescence of Silicon Rich Oxide Films Obtained by LPCVD
2012
Silicon technology dominates the electronics industry today, so it is highly desirable the development of silicon-based components compatible with silicon technology, allowing integration of electrical and optical components on a single chip. One promising approach to the development of a silicon based light emitter is Silicon Rich Oxide (SRO), also called offstoichiometric silicon oxide. The interest on the optical properties of this material has grown since it was demonstrated that SRO films subjected to high-temperature annealing exhibit efficient photoluminescence (PL) (Iacona et al., 2000; Shimizu-Iwayama et al., 1996).
Photochemical intermediates of trans-Rh(CO)L2Cl where L=PMe3, PBu3, and i-Pr2HN and cis-Rh(CO)2(i-Pr2HN)Cl in frozen organic glasses
2002
International audience; The Nujol glass matrix photolyses of Rh(CO)(PMe3)2Cl (1), Rh(CO)(PBu3)2Cl (2), Rh(CO)2(i-Pr2HN)Cl (3), and Rh(CO)(i-Pr2HN)2Cl (4), have been examined. Phototolysis of 1 (λirr>400 nm) and 2 (350<λirr<400 nm) give new species, A, with carbonyl stretching bands slightly below the parent bands. In the case of 1 this species appears to give rise to a second product, C, upon either extended photolysis or annealing. High-energy photolysis of 1, 2, and 4, result in loss of CO and formation of an IR silent species, RhL2Cl. In the case of 1 a new carbonyl species, B, is observed upon high-energy photolysis or annealing of a matrix containing CO and Rh(PMe3)2Cl. B may be conver…