Search results for "Microelectronics"
showing 10 items of 234 documents
Dispositif microtechnique à capteur d'image.
2011
L'invention vise un dispositif microtechnique. Le dispositif microtechnique comprend une micro-pince comprenant un support, avec un actionneur est un équipage mobile montés sur ledit support, ainsi qu'un capteur d'image, l'équipage mobile comprenant une embase avec une tête, l'embase étant déplaçable en translation par rapport au support et latdite têt étant déplaçable en rotation par rapport à l'embase, et dans lequel ledit capteur d'image est disposé sur ladite tête de l'équipage mobile en regard dudit actionneur.
A CMOS Image Sensor Design for Speed Determination of Fast Moving Luminous Objects
2003
International audience
Acoustic Topological Circuitry in Square and Rectangular Phononic Crystals
2021
International audience; We systematically engineer a series of square and rectangular phononic crystals to create experimental realizations of complex topological phononic circuits. The exotic topological transport observed is wholly reliant upon the underlying structure which must belong to either a square or rectangular lattice system and not to any hexagonal-based structure. The phononic system chosen consists of a periodic array of square steel bars which partitions acoustic waves in water over a broadband range of frequencies (∼0.5MHz). An ultrasonic transducer launches an acoustic pulse which propagates along a domain wall, before encountering a nodal point, from which the acoustic si…
Surface plasmon interference excited by tightly focused laser beams
2007
International audience; We show that interfering surface plasmon polaritons can be excited with a focused laser beam at normal incidence to a plane metal film. No protrusions or holes are needed in this excitation scheme. Depending on the axial position of the focus, the intensity distribution on the metal surface is either dominated by interferences between counterpropagating plasmons or by a two-lobe pattern characteristic of localized surface plasmon excitation. Our experiments can be accurately explained by use of the angular spectrum representation and provide a simple means for locally exciting standing surface plasmon polaritons.
Cavity Resonator Integrated Guided mode resonance Filter : Spectral & Modal Reflector
2015
International audience; CRIGF is a new generation of narrowband filter. It consists of subwavelength gratings nearby or upon a waveguide. At the center, a small GMRF (Guided Mode Resonance Filter) or GC (Grating Coupler) coupled radiated & guided mode, then, DBR (Distributed Bragg Reflector) at each side localise mode inside a horizontal Fabry-Pérot cavity. Two PS (Phase sections) are use to fine tune the Fabry-Pérot modes with the grating coupler.
P-Type Doping of 4H-SiC for Integrated Bipolar and Unipolar Devices
2015
International audience; P-type 4H-SiC layers formed by ion implantation need high temperature processes, which generate surface roughness, losing and incomplete activation of dopants. Due to dopant redistribution and channeling effect, it is difficult to predict the depth of the formed junctions. Vapor-Liquid-Solid (VLS) selective epitaxy is an alternative method to obtain locally highly doped p-type layers in the 1020 cm-3 range or more. The depth of this p-type layers or regions is accurately controlled by the initial Reactive-Ion-Etching (RIE) of the SiC. Lateral Junction Field Effect Transistor (JFET) devices are fabricated by integrating p-type layers created by Al ion implantation or …
Hf02 based RRAM: from materials engineering to integrated modules
2015
10 mars 2015; International audience; no abstract
Absorption enhancement in monocrystalline Si thin films using pseudodisordered structures
2015
21-25 june 2015; International audience; no abstract
When nanophotonics meet thin crystalline-silicon photovoltaics
2015
11-18 sept. 2015; International audience; no abstract
Changes in surface stress, morphology and chemical composition of silica and silicon nitride surfaces during the etching by gaseous HF acid
2007
International audience; HF acid attack of SiO2 and Si3N4 substrates is analyzed to improve the sensitivity of a sensor based on inicrocantilever. Ex situ analysis of the etching using XPS, SIMS and AFM show significant changes in the anisotropy and the rate of the etching of the oxides on SiO2 and Si3N4 surface. Those differences influence the kinetic evolution of the plastic bending deflection of the cantilever coated with SiO2 and Si3N4 layer, respectively. The linear dependence between the HF concentration and the Si3N4 cantilever bending corresponds to a deep attack of the layer whereas the nonlinear behavior observed for SiO2 layer can be explained by a combination of deep and lateral …