Search results for "Microfabrication"
showing 10 items of 65 documents
Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers
2008
http://link.aip.org/link/?JAPIAU/103/056108/1
Microcavity Light Emitting Diodes Based on GaN membranes Grown by Molecular Beam Epitaxy on Silicon
2003
Resonant-cavity InGaN/GaN quantum well light emitting diodes have been fabricated. Nitride layers were grown by molecular beam epitaxy on Si (111). We fabricated the structures using a combination of Si substrate etching, GaN etching and dielectric (Ta2O5/SiO2) mirror deposition. The electroluminescence spectra show that the emission within the distributed Bragg reflector stop band is enhanced in the membrane microcavity. The cavity modes are broadened by some cavity length non-uniformity that is introduced when the GaN is back etched to adjust the cavity length. This process does not need any transfer on an intermediate host substrate and is fully compatible with large area semiconductor p…
Power ultrasound irradiation during the alkaline etching process of the 2024 aluminium alloy
2015
Abstract Prior to any surface treatment on an aluminum alloy, a surface preparation is necessary. This commonly consists in performing an alkaline etching followed by acid deoxidizing. In this work, the use of power ultrasound irradiation during the etching step on the 2024 aluminum alloy was studied. The etching rate was estimated by weight loss, and the alkaline film formed during the etching step was characterized by glow discharge optical emission spectrometry (GDOES) and scanning electron microscope (SEM). The benefit of power ultrasound during the etching step was confirmed by pitting potential measurement in NaCl solution after a post-treatment (anodizing).
One-step formation of nanostructures on silicon surfaces using pure hydrogen-radical-initiated reactions
2013
One-step formation of silicon nanowires, sheets, and texture surface on a silicon substrate has been achieved using hydrogen-radical etching reactions. Metallic tungsten and for comparison purposes a tungsten hot wire, were used as catalysts for the hydrogen-molecular cracking. It was shown that a variety of surface structures on silicon such as inverted pyramid texture, V-groove texture, dense silicon nanowire growth over texture, and nanosheet structure can be obtained by controlling the process conditions. The obtained results suggested that the formation of nanotungsten silicide particle is an essential prerequisite to obtain these structures. The particles work as an etching mask again…
Biosensors, Porous Silicon
2002
Biosensors consist of a biologically active layer that responding to an analyte in solution and a powerful transducer that transforms and amplifies the reaction into a measurable signal. Biosensors can constantly measure the presence, absence, or concentration of specific organic or inorganic substances in short response time and ultimately at low cost. They are used commercially in health care, biotechnological process control, agriculture, veterinary medicine, defense, and environmental pollution monitoring. A common requirement of all of these applications is on-site chemical information—preferably in real time—on some dynamic or rapidly evolving process. Most biosensors are based on mol…
<title>Relief holographic recording in amorphous As-S-Se</title>
2003
The relief-phase holographic gratings in amorphous As-S-Se thin films were recorded and studied. The holographic recording was performed by He-Ne laser (0.6328 μm). The influence of etching and cohernet self-enhancement processes on the formation of surface relief in amorphous As-S-Se thin films was studied.© (2003) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Infrared microspectroscopy of biochemical response of living cells in microfabricated devices
2010
Abstract First experiments demonstrating the suitability of novel microfabricated fluidic devices for measuring living cells in physiological environment by synchrotron radiation (SR) Fourier Transform Infrared microspectroscopy (μ-FTIR) are presented. The devices were fabricated on CaF 2 windows, using the photoresist XARP 3100/10 to define the liquid cell lay-out. Therefore, the sample holder is transparent to both visible and infrared light, robust, completely recyclable and with a precise spacing. Using prototype devices of thicknesses 9, 5 and 3 μm, we studied the response of the U937 monocytic cell line to mechanical compression. The temporal evolution of the FTIR spectra, characteris…
Exploring 10 Gb/s transmissions in Titanium dioxide based waveguides at 1.55 pm and 2.0 pm
2017
Exploring new spectral bands for optical transmission is one of the solutions to support the increasingly demand of data traffic. The recent development of dedicated hollow-core photonic bandgap fibers [1], associated to the emergence of thulium doped fiber amplifiers [2] has recently focused the attention further in the infrared, and more specifically around 2 μm. Regarding integrated photonics, it becomes therefore interesting to find a suitable platform to operate at 2 μm as well as in the other more conventional spectral bands (going from 800 nm to 1550 nm). Here, we propose titanium dioxide (TiO 2 ) as a good candidate for integrated waveguide photonics and demonstrate, for the first t…
Direct Writing of Channels for Microfluidics in Silica by MeV Ion Beam Lithography
2011
The lithographic exposure characteristic of amorphous silica (SiO2) was investigated for 6.8 MeV16O3+ions. A programmable proximity aperture lithography (PPAL) technique was used for the ion beam exposure. After exposure, the exposed pattern was developed by selective etching in 4% v/v HF. Here, we report on the development of SiO2in term of the etch depth dependence on the ion fluence. This showed an exponential approach towards a constant asymptotic etch depth with increasing ion fluence. An example of microfluidic channels produced by this technique is demonstrated.
Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
2012
The plasma etch characteristics of aluminum nitride (AlN) deposited by low-temperature, 200 °C, plasma enhanced atomic layer deposition (PEALD) was investigated for reactive ion etch (RIE) and inductively coupled plasma-reactive ion etch (ICP-RIE) systems using various mixtures of SF6 and O2 under different etch conditions. During RIE, the film exhibits good mask properties with etch rates below 10r nm/min. For ICP-RIE processes, the film exhibits exceptionally low etch rates in the subnanometer region with lower platen power. The AlN film’s removal occurred through physical mechanisms; consequently, rf power and chamber pressure were the most significant parameters in PEALD AlN film remova…