Search results for "NANOWIRE"

SnCo nanowire array as negative electrode for lithium-ion batteries

2011

Abstract Amorphous SnCo alloy nanowires (NWs) grown inside the channels of polycarbonate membranes by potentiostatic codeposition of the two metals (SnCo- PM ) were tested vs. Li by repeated galvanostatic cycles in ethylene carbonate-dimethylcarbonate – LiPF 6 for use as negative electrode in lithium ion batteries. These SnCo electrodes delivered an almost constant capacity value, near to the theoretical for an atomic ratio Li/Sn of 4.4 over more than 35 lithiation–delithiation cycles at 1 C. SEM images of fresh and cycled electrodes showed that nanowires remain partially intact after repeated lithiation–delithiation cycles; indeed, several wires expanded and became porous. Results of amorp…

Some aspects of formation and tribological properties of silver nanodumbbells.

2013

In this paper, metal nanodumbbells (NDs) formed by laser-induced melting of Ag nanowires (NWs) on an oxidized silicon substrate and their tribological properties are investigated. The mechanism of ND formation is proposed and illustrated with finite element method simulations. Tribological measurements consist in controllable real-time manipulation of NDs inside a scanning electron microscope (SEM) with simultaneous force registration. The geometry of NDs enables to distinguish between different types of motion, i.e. rolling, sliding and rotation. Real contact areas are calculated from the traces left after the displacement of NDs and compared to the contact areas predicted by the contact m…

(Ga,In)P nanowires grown without intentional catalyst

2015

Abstract We have grown (Ga,In)P nanowires through the MOCVD method without a intentional catalyst. The organometallic precursor triethylgallium ( ( C 2 H 5 ) 3 Ga ) , used as Ga source, is transported by the N 2 gas carrier to the reactor chamber where reacts with the InP vapor pressure producing the nanowires. Two different reactor pressures (70 and 740 Torr) were used leading to nanowires with different In contents. The nanowires are straight or wool-like and exhibit a twinned structure. They emit an intense orange to red color visible even to the naked eyes. Interface tunneling process at Ga 1 − x In x P / Ga 1 − y In y P interfaces ( x ≠ y ) is proposed to explain this efficient light e…

Shifting the Photoresponse of ZnO Nanowires into the Visible Spectral Range by Surface Functionalization with Tailor-Made Carbon Nanodots

2018

We report on the surface functionalization of ZnO nanowires (NWs) with specifically synthesized carbon nanodots (C-dots, CDs) that allows us to shift the photoresponse of the NWs far into the visib...

Design and operation of CMOS-compatible electron pumps fabricated with optical lithography

2017

We report CMOS-compatible quantized current sources (electron pumps) fabricated with nanowires (NWs) on 300mm SOI wafers. Unlike other Al, GaAs or Si based metallic or semiconductor pumps, the fabrication does not rely on electron-beam lithography. The structure consists of two gates in series on the nanowire and the only difference with the SOI nanowire process lies in long (40nm) nitride spacers. As a result a single, silicide island gets isolated between the gates and transport is dominated by Coulomb blockade at cryogenic temperatures thanks to the small size and therefore capacitance of this island. Operation and performances comparable to devices fabricated using e-beam lithography is…

Erratum: Polarized and resonant Raman spectroscopy on single InAs nanowires (vol 84, 085318, 2011)

2012

We found out that the polar pattern for the zinc-blende InAs LO mode displayed in Fig. 2(b) of our original paper represents the backscattering Raman intensities from a (11¯2) top surface and not as stated in the original manuscript from a (110) top surface.In the latter the LO mode is forbidden for all configurations.

Switchable Light Reflectance in Dilute Magneto-Optical Colloids Based on Nickel Ferrite Nanowires

2018

Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD

2004

Abstract 3D (Ga,In)/GaInP structures were grown on polycrystalline InP substrates by the MOCVD technique. The growth temperature was varied from 600 to 700 °C. Trimethyl-gallium and N 2 were, respectively, used as the Ga source and the carrier gas. These newly presented 3D structures have a scepter-like shape and are composed of a long GaInP internal support (rods of tens of μm long and tens of nm diameter) capped by a micrometer size metallic (Ga,In) structure. These structures were characterized by the SEM, EDX and TEM techniques. High-resolution TEM shows that the support rods present a GaInP single crystal structure. A preliminary discussion about the growth step mechanism, based on the…

Structural and electronic properties of InN nanowire network grown by vapor-liquid-solid method

2015

Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS) technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [ 11 2 ̄ 0 ] direction (a-plane) to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveal…

Analysis of static friction and elastic forces in a nanowire bent on a flat surface: A comparative study

2014

ZnO nanowires bent to a complex shape and held in place by static friction force from supporting flat surface are investigated experimentally and theoretically. The complex shapes are obtained by bending the nanowires inside a scanning electron microscope with a sharp tip attached to a nanopositioner. Several methods previously described in the literature are applied along with author's original method to calculate the distributed friction force and stored elastic energy in the nanowires from the bending profile. This comparative study evidences the importance of the usage of appropriate models for accurate analysis of the nanowires profile. It is demonstrated that incomplete models can lea…