Search results for "NANOWIRE"

Towards metal chalcogenide nanowire-based colour-sensitive photodetectors

2018

Financial support provided by Scientific Research Project for Students and Young Researchers Nr. SJZ/2016/6 realized at the Institute of Solid State Physics, University of Latvia is greatly acknowledged. Authors are grateful to Reinis Ignatans for XRD measurements.

A comparative study of heterostructured CuO/CuWO4 nanowires and thin films

2017

Authors are grateful to Reinis Ignatans for XRD measurements.

Unraveling the strain state of GaN down to single nanowires

2016

International audience; GaN nanowires (NWs) grown by molecular beam epitaxy are usually assumed free of strain in spite of different individual luminescence signatures. To ascertain this usual assumption, the c/a of a GaN NW assembly has been characterized using both X-ray diffraction and Raman spectroscopy, with scaling the measurement down to the single NW. Free-standing single NWs have been observed free of strain-defined as [c/a = (c/a)(o)]/(c/a)(o)-within the experimental accuracy amounting to 1.25 x 10(-4). However, in the general case, a significant portion of the NWs is coalesced, generating an average tensile strain that can be partly released by detaching the NWs from their substr…

Elemental distribution and structural characterization of GaN/InGaN core-shell single nanowires by Hard X-ray synchrotron nanoprobes

2019

Improvements in the spatial resolution of synchrotron-based X-ray probes have reached the nano-scale and they, nowadays, constitute a powerful platform for the study of semiconductor nanostructures and nanodevices that provides high sensitivity without destroying the material. Three complementary hard X-ray synchrotron techniques at the nanoscale have been applied to the study of individual nanowires (NWs) containing non-polar GaN/InGaN multi-quantum-wells. The trace elemental sensitivity of X-ray fluorescence allows one to determine the In concentration of the quantum wells and their inhomogeneities along the NW. It is also possible to rule out any contamination from the gold nanoparticle …

Electrical and photoelectrical measurements on ZnO-Nanowires coated with PEDOT:PSS for Dye-Sensitized Solar Cells

2011

ABSTRACTDye-sensitized solar cells composed of an n-doped ZnO nanowire array and a p-doped polymer layer appears to be a promising candidate for low-cost production of environment-friendly solar cells. In this work, we investigate hybrid devices consisting of a transparent conducting oxide (TCO) substrate, ZnO-nanowires (ZnO-NW) or a sol-gel prepared ZnO layer, a ruthenium dye (N719) and a PEDOT:PSS or P3HT layer. The dense polycrystalline ZnO layer is able to prevent short circuits, which have a strong effect on the performance of the solar cells. This is demonstrated by the use of only the ZnO layer which improves the open circuit voltage by a factor of 2 and the efficiency by a factor of…

Sintesi per via elettrochimica di nanowires di leghe Co-Sn

2008

Solvent-mediated assembly of atom-precise gold–silver nanoclusters to semiconducting one-dimensional materials

2020

Bottom-up design of functional device components based on nanometer-sized building blocks relies on accurate control of their self-assembly behavior. Atom-precise metal nanoclusters are well-characterizable building blocks for designing tunable nanomaterials, but it has been challenging to achieve directed assembly to macroscopic functional cluster-based materials with highly anisotropic properties. Here, we discover a solvent-mediated assembly of 34-atom intermetallic gold–silver clusters protected by 20 1-ethynyladamantanes into 1D polymers with Ag–Au–Ag bonds between neighboring clusters as shown directly by the atomic structure from single-crystal X-ray diffraction analysis. Density fun…

Si Donor Incorporation in GaN Nanowires

2015

With increasing interest in GaN based devices, the control and evaluation of doping are becoming more and more important. We have studied the structural and electrical properties of a series of Si-doped GaN nanowires (NWs) grown by molecular beam epitaxy (MBE) with a typical dimension of 2-3 μm in length and 20-200 nm in radius. In particular, high resolution energy dispersive X-ray spectroscopy (EDX) has illustrated a higher Si incorporation in NWs than that in two-dimensional (2D) layers and Si segregation at the edge of the NW with the highest doping. Moreover, direct transport measurements on single NWs have shown a controlled doping with resistivity from 10(2) to 10(-3) Ω·cm, and a car…

Ultra-fast direct growth of metallic micro- and nano-structures by focused ion beam irradiation

2019

An ultra-fast method to directly grow metallic micro- and nano-structures is introduced. It relies on a Focused Ion Beam (FIB) and a condensed layer of suitable precursor material formed on the substrate under cryogenic conditions. The technique implies cooling the substrate below the condensation temperature of the gaseous precursor material, subsequently irradiating with ions according to the wanted pattern, and posteriorly heating the substrate above the condensation temperature. Here, using W(CO)6 as the precursor material, a Ga+ FIB, and a substrate temperature of -100 °C, W-C metallic layers and nanowires with resolution down to 38 nm have been grown by Cryogenic Focused Ion Beam Indu…

Splitting of surface-related phonons in Raman spectra of self-assembled GaN nanowires

2012

cited By 2; International audience; Micro Raman spectroscopy studies have been performed on GaN nanowires grown by Plasma-Assisted Molecular Beam Epitaxy on Silicon (111) substrate. From the analysis of experimental data, the emergence of a two peaks band located near 700 cm-1 has been attributed to the Raman scattering by surface-related phonons. We have analyzed the surface character of these two modes by changing the dielectric constant of the exterior medium and some experimental parameters. Furthermore, a theoretical model describing the nanowires ensemble by means of an effective dielectric function has been used to interpret the Raman scattering results. Those numerical simulations a…