Search results for "NITRIDES"

showing 10 items of 13 documents

Selective photocatalytic oxidation of 5-hydroxymethyl-2-furfural to 2,5-furandicarboxyaldehyde in aqueous suspension of g-C3N4

2017

Graphitic carbon nitride assisted partial photocatalytic oxidation of 5-hydroxymethyl-2-furfural (HMF) in aqueous medium was investigated. Different carbon nitride precursors were considered, being melamine the one yielding the most efficient photocatalyst. The obtained 30% selectivity of HMF oxidation to 2,5-furandicarboxaldehyde (FDC) is higher than those reported up to now. A further thermal exfoliation of the g-C3N4 samples showed under artificial light irradiation both an enhanced photocatalytic activity in conversion of HMF, and selectivity (ca. 42–45%) to FDC. The performance of the catalysts increased when the experiments were carried out under real outdoor illumination, reaching 50…

Carbon nitrideInorganic chemistry02 engineering and technology010402 general chemistry01 natural sciencesCatalysisCatalysisCatalysichemistry.chemical_compound5-hydroxymethyl-2-furfuralIrradiationExfoliationCarbon nitrideGeneral Environmental Science2300Process Chemistry and TechnologyGraphitic carbon nitridePartial photocatalytic oxidation021001 nanoscience & nanotechnologyCarbon nitridesExfoliation joint0104 chemical scienceschemistry25-FurandicarboxaldehydePhotocatalysisSettore CHIM/07 - Fondamenti Chimici Delle Tecnologie5-Hydroxymethyl-2-furfural0210 nano-technologyMelamineSelectivity
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High-pressure optical absorption in InN: Electron density dependence in the wurtzite phase and reevaluation of the indirect band gap of rocksalt InN

2012

We report on high-pressure optical absorption measurements on InN epilayers with a range of free-electron concentrations (5×1017–1.6×1019 cm−3) to investigate the effect of free carriers on the pressure coefficient of the optical band gap of wurtzite InN. With increasing carrier concentration, we observe a decrease of the absolute value of the optical band gap pressure coefficient of wurtzite InN. An analysis of our data based on the k·p model allows us to obtain a pressure coefficient of 32 meV/GPa for the fundamental band gap of intrinsic wurtzite InN. Optical absorption measurements on a 5.7-μm-thick InN epilayer at pressures above the wurtzite-to-rocksalt transition have allowed us to o…

Electron densityPhase transitionMaterials scienceCondensed matter physicsBand gapCondensed Matter PhysicsPressure coefficientIII-V NitridesElectronic Optical and Magnetic MaterialsFISICA APLICADAAlloysDirect and indirect band gapsAbsorption (logic)StabilityEnergy (signal processing)Wurtzite crystal structurePhysical Review B
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High-pressure lattice dynamics in wurtzite and rocksalt indium nitride investigated by means of Raman spectroscopy

2013

We present an experimental and theoretical lattice-dynamical study of InN at high hydrostatic pressures. We perform Raman scattering measurements on five InN epilayers, with different residual strain and free electron concentrations. The experimental results are analyzed in terms of ab initio lattice-dynamical calculations on both wurtzite InN (w-InN) and rocksalt InN (rs-InN) as a function of pressure. Experimental and theoretical pressure coefficients of the optical modes in w-InN are compared, and the role of residual strain on the measured pressure coefficients is analyzed. In the case of the LO band, we analyze and discuss its pressure behavior considering the double-resonance mechanis…

Free electron modelMaterials scienceIndium nitridePhononAb initioMolecular physicsChargeScatteringN-type inpMathematics::Group TheoryCondensed Matter::Materials Sciencesymbols.namesakechemistry.chemical_compoundEffective mass (solid-state physics)DependencePseudopotentialsWurtzite crystal structureCondensed matter physicsCondensed Matter PhysicsIII-V NitridesGanElectronic Optical and Magnetic MaterialschemistryFISICA APLICADAsymbolsModesConstantsRaman spectroscopyStabilityRaman scatteringPhysical Review B
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Growth of titanium oxynitride layers by short pulsed Nd:YAG laser treatment of Ti plates: Influence of the cumulated laser fluence.

2009

International audience; Titanium oxynitride layerswere formed by surface laser treatment of Ti plates in air using a Nd:YAG laser source of short pulse duration about 5 ns. The cumulated laser fluence was varied in the 100–1200 J cm2 range and its influence on the composition and the structure of the formed layers was studied by different characterization techniques providing physico-chemical and structural information. It was shown that the laser treatment induces the insertion of light elements as O, N and C in the formed layer with the amount increasing with the laser fluence. The in-depth composition of the layers and the co-existence of different phases were also studied. The way in wh…

Materials scienceAnalytical chemistryGeneral Physics and Astronomychemistry.chemical_element02 engineering and technologyLaser pumping01 natural sciencesFluencelaw.inventionTitanium oxynitridesPlasmalawLaser treatment0103 physical sciences010302 applied physicsPulse durationSurfaces and InterfacesGeneral ChemistryPlasma021001 nanoscience & nanotechnologyCondensed Matter PhysicsLaserSurfaces Coatings and FilmschemistryTitanium oxycarbidesNd:YAG laser0210 nano-technologyLayer (electronics)Titanium
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Compressibility and structural stability of ultra-incompressible bimetallic interstitial carbides and nitrides

2012

We have investigated by means of high-pressure x-ray diffraction the structural stability of Pd 2Mo 3N, Ni 2Mo 3C 0.52N 0.48, Co 3Mo 3C 0.62N 0.38, and Fe 3Mo 3C. We have found that they remain stable in their ambient-pressure cubic phase at least up to 48 GPa. All of them have a bulk modulus larger than 330 GPa, the least compressible material being Fe 3Mo 3C, B 0 = 374(3) GPa. In addition, apparently a reduction of compressibility is detected as the carbon content is increased. The equation of state for each material is determined. A comparison with other refractory materials indicates that interstitial nitrides and carbides behave as ultra-incompressible materials. © 2012 American Physic…

Materials scienceHigh-pressureAnalytical chemistryUltra-incompressibleFOS: Physical scienceschemistry.chemical_elementNitrideengineering.materialCarbideNitridesStructural stabilityPhysics - Chemical PhysicsBimetallic stripChemical Physics (physics.chem-ph)MolybdenumCondensed Matter - Materials ScienceCompoundsMaterials Science (cond-mat.mtrl-sci)DiamondCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsBeamlinechemistryMolybdenumFISICA APLICADAX-ray crystallographyCompressibilityengineeringCarbidesPd2Mo3N
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High-Pressure Softening of the Out-of-Plane A2u(Transverse-Optic) Mode of Hexagonal Boron Nitride Induced by Dynamical Buckling

2019

We investigate the highly anisotropic behavior of the in-plane and out-of-plane infrared-active phonons of hexagonal boron nitride by means of infrared reflectivity and absorption measurements under high pressure. Infrared reflectivity spectra at normal incidence on high-quality single crystals show strict fulfillment of selection rules and an unusually long E1u[transverse-optic (TO)] phonon lifetime. Accurate values of the dielectric constants at ambient pressure ϵ0= 6.96, ϵ∞= 4.95, ϵ 0= 3.37, and ϵ∞ = 2.84 have been determined from fits to the reflectivity spectra. The out-of-plane A2u phonon reflectivity band is revealed in measurements on an inclined facet, and absorption measurements a…

Materials sciencePhononReflectionAstrophysics::Cosmology and Extragalactic Astrophysics02 engineering and technologyNitride010402 general chemistry01 natural sciencesNitridesCondensed Matter::Materials Sciencechemistry.chemical_compoundCondensed Matter::SuperconductivityPhysical and Theoretical ChemistryAbsorption (electromagnetic radiation)AnisotropySofteningAstrophysics::Galaxy AstrophysicsCondensed matter physics021001 nanoscience & nanotechnology0104 chemical sciencesSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsBoron nitrideTransverse planeGeneral EnergychemistryBucklingBoron nitride[PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other][PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]CalculationsIII-V semiconductorsPhononsSingle crystalsAstrophysics::Earth and Planetary Astrophysics0210 nano-technology
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Heteropolyacids supported on boron nitride and carbon nitride for catalytic and catalytic photo-assisted alcohol dehydration

2021

Keggin H3PW12O40 (PW12) and Wells-Dawson H6P2W18O60 (P2W18) heteropolyacids (HPAs) are photo(catalysts) for various acid-promoted and redox catalytic reactions. Their activity increases if they are deposited on certain supports as metal oxides or carbon materials. Although the surface area and acid-base interactions of the HPAs with supports are considered as key factors for the performance of the binary material, the role of the local structure changes in the HPAs upon their immobilization on solids must be also of primary importance, directly affecting both acidity and photoredox properties. Here, the (photo)catalytic performance of Keggin and Wells-Dawson heteropolytungstates supported o…

Materials sciencePhoto assistedAlcohol02 engineering and technology010402 general chemistry01 natural sciencesCatalysisCatalysis2-Propanol dehydration Boron nitride Carbon nitride Heteropolyacid Keggin Photocatalysis Wells-Dawsonchemistry.chemical_compoundHeteropolyacid | KegginWells-Dawsonmedicine2-Propanol dehydrationDehydrationPhotocatalysisCarbon nitrideGeneral ChemistryCarbon nitrides021001 nanoscience & nanotechnologymedicine.disease0104 chemical sciencesBoron nitrideKeggin Wells-Dawson Heteropolyacid Boron nitride Carbon nitride 2-Propanol dehydration PhotocatalysischemistryBoron nitrideSettore CHIM/07 - Fondamenti Chimici Delle TecnologieMethanol0210 nano-technologyNuclear chemistryCatalysis Today
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Structure and chemical bonds in reactively sputtered black Ti–C–N–O thin films

2011

The evolution of the nanoscale structure and the chemical bonds formed in Ti–C–N–O films grown by reactive sputtering were studied as a function of the composition of the reactive atmosphere by increasing the partial pressure of an O2+N2 gas mixture from 0 up to 0.4 Pa, while that of acetylene (carbon source) was constant. The amorphisation of the films observed by transmission electron microscopy was confirmed by micro- Raman spectroscopy, but it was not the only effect associated to the increase of the O2+N2 partial pressure. The chemical environment of titanium and carbon, analysed by X-ray photoemission spectroscopy, also changes due to the higher affinity of Ti towards oxygen and nitro…

Materials sciencePhotoemission spectroscopyReactive sputteringAnalytical chemistrychemistry.chemical_element02 engineering and technology01 natural sciencesElectron spectroscopyX-ray photoelectron spectroscopy0103 physical sciencesMaterials Chemistry010302 applied physicsTitanium oxy-carbo-nitridesScience & TechnologyMetals and AlloysSurfaces and InterfacesPartial pressure021001 nanoscience & nanotechnologyX-ray photoelectron SpectroscopyTransmission electron Microscopy3. Good healthSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsCarbon filmAmorphous carbonchemistryRaman spectroscopy0210 nano-technologyCarbonTitanium
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Stability of Halloysite, Imogolite, and Boron Nitride Nanotubes in Solvent Media

2018

Inorganic nanotubes are attracting the interest of many scientists and researchers, due to their excellent application potential in different fields. Among them, halloysite and imogolite, two naturally-occurring aluminosilicate mineral clays, as well as boron nitride nanotubes have gained attention for their proper shapes and features. Above all, it is important to reach highly stable dispersion in water or organic media, in order to exploit the features of this kind of nanoparticles and to expand their applications. This review is focused on the structural and morphological features, performances, and ratios of inorganic nanotubes, considering the main strategies to prepare homogeneous col…

Materials scienceboron nitridesnanoparticle dispersionNanoparticleNanotechnologyImogolite02 engineering and technologyengineering.material010402 general chemistrylcsh:Technology01 natural sciencesHalloysitenanotubesNanomaterialslcsh:ChemistryColloidchemistry.chemical_compoundAluminosilicateGeneral Materials Sciencecolloidal stabilityhalloysitelcsh:QH301-705.5InstrumentationFluid Flow and Transfer Processeslcsh:TProcess Chemistry and TechnologyGeneral Engineering021001 nanoscience & nanotechnologylcsh:QC1-9990104 chemical sciencesComputer Science ApplicationsBoron nitrideNanotubeimogolitelcsh:Biology (General)lcsh:QD1-999chemistrylcsh:TA1-2040Boron nitrideengineeringlcsh:Engineering (General). Civil engineering (General)0210 nano-technologyDispersion (chemistry)lcsh:PhysicsApplied Sciences
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Current status of AlInN layers lattice-matched to GaN for photonics and electronics

2007

We report on the current properties of Al1-x InxN (x approximate to 0.18) layers lattice- matched ( LM) to GaN and their specific use to realize nearly strain- free structures for photonic and electronic applications. Following a literature survey of the general properties of AlInN layers, structural and optical properties of thin state- of- the- art AlInN layers LM to GaN are described showing that despite improved structural properties these layers are still characterized by a typical background donor concentration of ( 1 - 5) x 10(18) cm(-3) and a large Stokes shift (similar to 800 meV) between luminescence and absorption edge. The use of these AlInN layers LM to GaN is then exemplified …

PhotoluminescenceMaterials scienceAcoustics and UltrasonicsGallium nitrideSettore ING-INF/01 - ElettronicaVertical-cavity surface-emitting laserchemistry.chemical_compoundMOLECULAR-BEAM EPITAXYALGAN/GAN QUANTUM-WELLSIII-VDISTRIBUTED BRAGG REFLECTORSCRYSTALSURFACE-EMITTING LASERSbusiness.industryREFLECTORSHeterojunctionOPTICAL-PROPERTIESCondensed Matter PhysicsAL1-XINXN THIN-FILMSSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsDISTRIBUTED BRAGGAbsorption edgechemistryOptoelectronicsVAPOR-PHASE EPITAXYIII-V NITRIDESFIELD-EFFECT TRANSISTORSNITRIDESbusinessLiterature surveyCRYSTAL GALLIUM NITRIDELasing thresholdGALLIUM NITRIDEMolecular beam epitaxyJournal of Physics D: Applied Physics
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