Search results for "NOE"
showing 10 items of 825 documents
Resonance assisted jump-in voltage reduction for electrostatically actuated nanobeam-based gateless NEM switches.
2019
Electrostatically actuated nanobeam-based electromechanical switches have shown promise for versatile novel applications, such as low power devices. However, their widespread use is restricted due to poor reliability resulting from high jump-in voltages. This article reports a new method for lowering the jump-in voltage by inducing mechanical oscillations in the active element during the switching ON process, reducing the jump-in voltage by more than three times. Ge0.91Sn0.09 alloy and Bi2Se3 nanowire-based nanoelectromechanical switches were constructed in situ to demonstrate the operation principles and advantages of the proposed method.
Oxide-based nanomaterials for fuel cell catalysis:the interplay between supported single Pt atoms and particles
2017
The concept of single atom catalysis offers maximum noble metal efficiency for the development of low-cost catalytic materials. Among possible applications are catalytic materials for proton exchange membrane fuel cells. In the present review, recent efforts towards the fabrication of single atom catalysts on nanostructured ceria and their reactivity are discussed in the prospect of their employment as anode catalysts. The remarkable performance and the durability of the ceria-based anode catalysts with ultra-low Pt loading result from the interplay between two states associated with supported atomically dispersed Pt and sub-nanometer Pt particles. The occurrence of these two states is a co…
Antimicrobial Bilayer Nanocomposites Based on the Incorporation of As-Synthetized Hollow Zinc Oxide Nanotubes
2020
© 2020 by the authors.
Effects of partial self-ordering of Si dots formed by chemical vapor deposition on the threshold voltage window distribution of Si nanocrystal memori…
2006
We study the role that the denuded zone around Si nanocrystals obtained by chemical vapor deposition plays on the fluctuations of the dot surface coverage. In fact, the capture mechanism of the silicon adatoms in the proximity of existing dots restricts the number of possible nucleation sites, the final dot size, and the dot position, thus driving the process toward partial self-order. We numerically evaluate the relative dispersion of surface coverage for several gate areas and compare the results to the fully random case. The coverage dispersion is related to the fluctuations from bit to bit of the threshold voltage window (Δ Vth) distribution of nanocrystal memories. The evaluations, com…
High-Density Arrays of Germanium Nanowire Photoresistors
2006
Here we present for the first time a study of the photoresistive properties and dynamics of ordered, high-density arrays of germanium nanowire photoresistors. Germanium is a wellknown semiconducting material with an indirect bandgap, Eg, of approximately 0.66 eV (temperature T = 300 K) and has been widely used for the fabrication of photodetectors, radiation detectors, charged particle and photon tracking devices, far-infrared photoresistors, and numerous other devices. During the last few years there has also been increasing interest in the use of nanostructures (quantum dots and wires) of both germanium and silicon as materials for potential applications in sensors, nanophotonics, and nan…
Effect of high-k materials in the control dielectric stack of nanocrystal memories
2004
In this paper we studied program/erase characteristics by FN tunneling in Si nanocrystal memories. Starting from a very good agreement between experimental data and simulations in the case of a memory cell with a thin tunnel oxide, Silicon dots as medium for charge storage, and a CVD silicon dioxide used as control dielectric, we present estimated values of the charge trapping when a high-k material is present in the control dielectric. We then show preliminary results of nanocrystal memories with control dielectric containing high-k materials. ©2004 IEEE.
Two-Color Single Hybrid Plasmonic Nanoemitters with Real Time Switchable Dominant Emission Wavelength
2015
International audience; We demonstrate two-color nanoemitters that enable the selection of the dominant emitting wavelength by varying the polarization of excitation light. The nanoemitters were fabricated via surface plasmon-triggered two-photon polymerization. By using two polymerizable solutions with different quantum dots, emitters of different colors can be positioned selectively in different orientations in the close vicinity of the metal nanoparticles. The dominant emission wavelength of the metal/polymer anisotropic hybrid nanoemitter thus can be selected by altering the incident polarization.
Erratum: Polarized and resonant Raman spectroscopy on single InAs nanowires (vol 84, 085318, 2011)
2012
We found out that the polar pattern for the zinc-blende InAs LO mode displayed in Fig. 2(b) of our original paper represents the backscattering Raman intensities from a (11¯2) top surface and not as stated in the original manuscript from a (110) top surface.In the latter the LO mode is forbidden for all configurations.
Three dimensional nanoscale analysis reveals aperiodic mesopores in a covalent organic framework and conjugated microporous polymer.
2019
The integrated analytical approach developed in this study offers a powerful methodology for the structural characterisation of complex molecular nanomaterials. Structures of a covalent organic framework based on boronate esters (COF-5) and a conjugated microporous polymer (Aza-CMP) have been investigated by a combination of several electron microscopy techniques elucidating the three-dimensional topology of the complex polycrystalline (COF) and non-crystalline (CMP) materials. Unexpected, aperiodic mesoporous channels of 20-50 nm in diameter were found to be penetrating the COF and CMP particles, which cannot be detected by X-ray diffraction techniques. The mesopores appear to be stable un…
Nanoengineered Gd3Al2Ga3O12 Scintillation Materials with Disordered Garnet Structure for Novel Detectors of Ionizing Radiation
2019
The authors are grateful to Baker Hughes a GE Company for support of this activity. This work has also been supported by grant N14.W03.31.0004 from the Government of the Russian Federation.