Search results for "Nitride"
showing 10 items of 249 documents
Growth and Electrical Characterization of Horizontally Aligned CNTs
2009
Nickel catalyst nanoparticles acting as nucleating seeds for carbon nanotube (CNT) growth were selectively deposited on the sidewalls of titanium nitride (TiN) electrodes by electrochemical deposition (ECD) from a Ni2+ electrolyte solution. Horizontal aligned CNTs were grown selectively from the sidewalls of these TiN electrodes forming a bridging CNT contact between the electrode gaps. Current-voltage measurements demonstrated this could be a promising technique towards nanoscale interconnections and nanoelectronic devices with resistance values for the bridging CNTs as low as 300Ω.
Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
2016
Plasma-enhanced atomic layer deposition was utilized to grow aluminum nitride (AlN) films on Si from trimethylaluminum and N2:H2 plasma at 200 °C. Thermal treatments were then applied on the films which caused changes in their chemical composition and nanostructure. These changes were observed to manifest in the refractive indices and densities of the films. The AlN films were identified to contain light element impurities, namely, H, C, and excess N due to nonideal precursor reactions. Oxygen contamination was also identified in the films. Many of the embedded impurities became volatile in the elevated annealing temperatures. Most notably, high amounts of H were observed to desorb from the…
Structural and Electrical Transport Properties of Si doped GaN nanowires
2016
The control and assessment of doping in GaN nanostructures are crucial for the realization of GaN based nanodevices. In this study, we have investigated a series of Si-doped GaN nanowires (NWs) grown by molecular beam epitaxy (MBE) with a typical dimension of 2–3 µm in length, and 20–200 nm in radius. In particular, high resolution energy dispersive X-ray spectroscopy (EDX) has illustrated a higher Si incorporation in NWs than that in two-dimensional (2D) layers and Si segregation at the edge of the NW with the highest doping. Moreover, direct transport measurements on single NWs have revealed a controlled doping with resistivity from 2 × 10−2 to 10−3 Ω.cm for Si doped NWs. Field effect tra…
Infrared pulsed laser deposition of niobium nitride thin films
2011
We have successfully fabricated superconducting niobium nitride thin films on single crystals of magnesium oxide using a pulsed laser deposition technique where 1064 nm (photon energy ~1.16 eV) laser pulses from an Nd:YAG laser were used for ablation. A correlation between the superconducting transition temperature, the nitrogen base pressure during deposition and the lattice parameter of the produced NbN films was observed. Superconductor-insulator-normal metal junctions fabricated using these NbN films as the superconductor revealed nonlinear electrical characteristics at 4.2 K associated with quasiparticle tunneling.
Growth of sub-nanometric palladium clusters on boron nitride nanotubes: a DFT study.
2015
A QM/MM investigation is reported dealing with the nucleation and growth of small palladium clusters, up to Pd8, on the outer surface of a suitable model of boron nitride nanotubes (BNNTs). It is shown that BNNTs could have a template effect on the cluster growth, which is due to the interplay between Pd–N and Pd–Pd interactions as well as due to the matching of the B3N3 ring and the Pd(111) face arrangement. The values for the cluster adsorption energies reveal a relatively strong physisorption, which suggests that under particular conditions the BNNTs could be used as supports for the preparation of shape-controlled metal clusters.
First-principles calculations of point defects in inorganic nanotubes
2013
The first-principles calculations have been performed to investigate the ground-state properties of monoperiodic boron nitride (BN), TiO2, and SrTiO3 single-walled nanotubes (SW NTs) containing extrinsic point defects. The hybrid exchange–correlation functionals PBE, B3LYP, and B3PW within the framework of density functional theory (DFT) have been applied for large-scale ab initio calculations on NTs with the following substitutional impurities: AlB, PN, GaB, AsN, InB, and SbN in the BN NT, as well as CO, NO, SO, and FeTi in the TiO2 and SrTiO3 NTs, respectively. The variations in formation energies obtained for equilibrium defective nanostructures allow us to predict the most stable compos…
Optical Contrast and Raman Spectroscopy Techniques Applied to Few-Layer 2D Hexagonal Boron Nitride
2019
The successful integration of few-layer thick hexagonal boron nitride (hBN) into devices based on two-dimensional materials requires fast and non-destructive techniques to quantify their thickness. Optical contrast methods and Raman spectroscopy have been widely used to estimate the thickness of two-dimensional semiconductors and semi-metals. However, they have so far not been applied to two-dimensional insulators. In this work, we demonstrate the ability of optical contrast techniques to estimate the thickness of few-layer hBN on SiO2/Si substrates, which was also measured by atomic force microscopy. Optical contrast of hBN on SiO2/Si substrates exhibits a linear trend with the number of h…
Influence of Phonon dimensionality on Electron Energy Relaxation
2007
We studied experimentally the role of phonon dimensionality on electron-phonon (e-p) interaction in thin copper wires evaporated either on suspended silicon nitride membranes or on bulk substrates, at sub-Kelvin temperatures. The power emitted from electrons to phonons was measured using sensitive normal metal-insulator-superconductor (NIS) tunnel junction thermometers. Membrane thicknesses ranging from 30 nm to 750 nm were used to clearly see the onset of the effects of two-dimensional (2D) phonon system. We observed for the first time that a 2D phonon spectrum clearly changes the temperature dependence and strength of the e-p scattering rate, with the interaction becoming stronger at the …
Splitting of the surface phonon modes in wurtzite nanowires
2013
We analyze the surface optical modes of GaN nanowires (NW) and perform a comparative study with the characteristics expected for other polar NWs. The theoretical analysis of the modes is performed within the context of the effective medium theory that takes into account the dipolar interaction between neighboring NWs (Maxwell-Garnett approximation). It is shown that deviations of the exciting light from the NWs axis, which coincides with the wurtzite c-axis, result in the anticrossing of two distinct surface phonon branches, leading to their splitting in axial and planar components and the appearance of two peaks in the Raman spectra. Additional calculations are performed that determine th…
High-Pressure Softening of the Out-of-Plane A2u(Transverse-Optic) Mode of Hexagonal Boron Nitride Induced by Dynamical Buckling
2019
We investigate the highly anisotropic behavior of the in-plane and out-of-plane infrared-active phonons of hexagonal boron nitride by means of infrared reflectivity and absorption measurements under high pressure. Infrared reflectivity spectra at normal incidence on high-quality single crystals show strict fulfillment of selection rules and an unusually long E1u[transverse-optic (TO)] phonon lifetime. Accurate values of the dielectric constants at ambient pressure ϵ0= 6.96, ϵ∞= 4.95, ϵ 0= 3.37, and ϵ∞ = 2.84 have been determined from fits to the reflectivity spectra. The out-of-plane A2u phonon reflectivity band is revealed in measurements on an inclined facet, and absorption measurements a…