Search results for "Nitride"
showing 10 items of 249 documents
A new intermediate intercalate in superconducting sodium-doped hafnium nitride chloride
2005
Anew phase has been observed during the sodiumintercalation of hafnium nitride chloride as intermediate between the host β-HfNCl and the already reported Na 0.29 HfNCl with Tc of 24 K; the new intermediate shows interlayer spacings ranging from 9.48 to 9.67 A°, corresponds to a second stage intercalate of HfNCl and is superconducting with a critical temperature of 20 K. Beltran Porter, Daniel, Daniel.Beltran@uv.es
Unstable behaviour of normally-off GaN E-HEMT under short-circuit
2018
The short-circuit capability of power switching devices plays an important role in fault detection and the protection of power circuits. In this work, an experimental study on the short-circuit (SC) capability of commercial 600 V Gallium Nitride enhancement-mode high-electron-mobility transistors (E-HEMT) is presented. A different failure mechanism has been identified for commercial p-doped GaN gate (p-GaN) HEMT and metal-insulator-semiconductor (MIS) HEMT. In addition to the well known thermal breakdown, a premature breakdown is shown on both GaN HEMTs, triggered by hot electron trapping at the surface, which demonstrates that current commercial GaN HEMTs has requirements for improving the…
On the possibility of synthesizing multilayered coatings in the (Ti,Al)N system by RGPP: A microstructural study
2019
International audience; Radiofrequency magnetron sputtering combined with reactive gas pulsing process was used to synthesize two titanium aluminum nitride multilayer films using a periodically controlled nitrogen flow rate changing from 0.4 to 1 sccm (sample S04-1) and from 0 to 1 sccm (sample S0-1). A metallic TiAl buffer layer was deposited on the etched substrates before the deposition to enhance their adhesion. The films were characterized using mainly transmission electron microscopy and electron diffraction. The role of the crystallinity of the buffer TiAl metallic layer deposited before gas introduction on the growth orientations is emphasized. It is shown that the formation of a mu…
Structural and electrical properties of magnetron sputtered Ti(ON) thin films:The case of TiN doped in situ with oxygen.
2009
International audience; Incorporation of oxygen into TiN lattice results in formation of titanium oxynitrides, TiOxNy that have become particularly interesting for photocatalytic applications. Elaboration as well as characterization of TiN and in situ oxygen-doped thin films is the subject of this paper. Thin films, 250–320nm in thickness, have been deposited by dc-pulsed magnetron reactive sputtering from Ti target under controllable gas flows of Ar, N2 and O2. Optical monitoring of Ti plasma emission line at = 500nm has been implemented in order to stabilize the sputtering rate. Scanning electron microscopy (SEM), X-ray diffraction in grazing incidence (GIXRD), micro-Raman spectroscopy, X…
Anisotropic and non-heterogeneous continuum percolation in titanium oxynitride thin columnar films
2002
International audience; We report the percolation behaviour of the conductivity of titanium oxynitride films grown by low-pressure metal-organic chemical vapour deposition, composed of TiNxOy mixed with TiO2. The usual DC parameters (t, s and Φc), obtained from the effective media theory equations, are compared to the universal values (s = sun while t < tun because of the film anisotropy). This is the first example of an electrical continuum percolation applied to columnar films with chemically similar conducting and insulating units (non-heterogeneous percolation) whose mixing is based upon the growth temperature during the film growth.
WEAR PERFORMANCE OF CERAMIC CUTTING-TOOL MATERIALS WHEN CUTTING STEEL
1991
Abstract Some test cycles have been carried out in continuous cutting conditions, employing cutting parameters (feed, depth of cut and cutting speed) chosen following experimental planes and suitable test fields. The wear tests have been carried out on AISI 1040 steel with cutting speeds from 5m/sec to 11m/sec. The silicon nitride, sintered carbide, cubic boron nitride and alumina reinforced with SiC whiskers inserts, have shown, at each assigned cutting parameter, poor wear resistance when cutting steel. Alumina and alumina in submicron grain, which has been toughened by ZrO2 phase transformation, and the oxide-based alumina, have been the better wear resistance. The mixed based alumina ha…
Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs
2019
GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters, where high frequencies and voltages are also needed. Its wide band gap (WBG), large breakdown electric field, and thermal stability improve actual silicon performances. However, at the moment, GaN HEMT technology suffers from some reliability issues, one of the more relevant of which is the dynamic on-state resistance (R) regarding power switching converter applications. In this study, we focused on the drain-to-source on-resistance (R) characteristic…
Stability of Halloysite, Imogolite, and Boron Nitride Nanotubes in Solvent Media
2018
Inorganic nanotubes are attracting the interest of many scientists and researchers, due to their excellent application potential in different fields. Among them, halloysite and imogolite, two naturally-occurring aluminosilicate mineral clays, as well as boron nitride nanotubes have gained attention for their proper shapes and features. Above all, it is important to reach highly stable dispersion in water or organic media, in order to exploit the features of this kind of nanoparticles and to expand their applications. This review is focused on the structural and morphological features, performances, and ratios of inorganic nanotubes, considering the main strategies to prepare homogeneous col…
Evaluation of Gallium Nitride Transistors in Electronic Power Conditioners for TWTAs
2015
The aim of this paper is to evaluate the benefits of replacing Si Mosfets transistors with enhancement mode GaN transistors in a Half-Bridge Zero Voltage and Zero Current Switching Power Switching Converter (ZVZCPS). This converter is usually used as power supply of the travelling-wave tube amplifiers (TWTAs) in aerospace applications. In this paper, firstly the converter is theoretically analyzed, obtaining its operation, losses and efficiency equations, these equations are used to obtain optimizations maps based on the main system parameters. In this way, the ideal design parameters can be visually obtained. These optimization maps are the key to quantify the potential benefits of GaN tra…
Structural and electronic properties of InN nanowire network grown by vapor-liquid-solid method
2015
Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS) technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [ 11 2 ̄ 0 ] direction (a-plane) to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveal…