Search results for "O2"

showing 10 items of 1115 documents

Towards the electrochemical conversion of CO2 to formic acid at an applicative scale: technical and economic analysis of most promising routes

2021

In the last decade, the electrochemical conversion of CO 2 to formic acid, FA, using Sn‐based cathodes, was widely investigated. In this work, the technical feasibility and economic viability of this process were evaluated considering the most promising electrochemical routes reported in the literature. Five case studies, based on the utilisation of GDE technologies or high CO 2 pressures, were analysed. The cost for producing FA by the electrochemical route was compared with that of the conventional chemical route. Several scenarios were envisioned finding the target figures of merit, the potential bottlenecks (including low FA concentration, GDE cost and high energy consumption) of each t…

Materials scienceScale (ratio)Formic acidbusiness.industrychemistry.chemical_elementSettore ING-IND/27 - Chimica Industriale E TecnologicaElectrochemistryCatalysisReduction (complexity)chemistry.chemical_compoundReduction CO2 Formic Acid Tin Technical-economic analysischemistryElectrochemistryEconomic analysisTinProcess engineeringbusiness
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The Effect of Nb Incorporation on the Electronic Properties of Anodic HfO2

2017

Hafnium oxide and Nb doped HfO2 were grown by anodizing sputtering-deposited Hf and Hf-4at.%Nb. Photoelectrochemical characterization was carried out in order to estimate solid state properties such as band gap, flat band potential and electrons internal photoemission threshold energy as a function of thickness and composition of anodic oxides. Optical transitions at energy lower than the band gap value of the investigated anodic films were evidenced, and they are attributed to optical transitions involving localized states inside the band gap. Such states were located at 3.6 eV and 3.9 eV below the conduction band edge for the Nb free and Nb containing hafnium oxide, respectively. Impedanc…

Materials scienceSettore ING-IND/23 - Chimica Fisica ApplicataChemical engineeringAnodic oxides Electrochemical Impedance Spectroscopy HfO2 Nb incorporation Photoelectrochemistry02 engineering and technology010402 general chemistry021001 nanoscience & nanotechnology0210 nano-technology01 natural sciences0104 chemical sciencesElectronic Optical and Magnetic MaterialsElectronic propertiesAnode
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Properties of atomic layer deposited nanolaminates of zirconium and cobalt oxides

2018

Producción Científica

Materials scienceSilicon116 Chemical sciencesta221chemistry.chemical_element02 engineering and technologyDielectricChemical vapor deposition7. Clean energy01 natural sciencesSpray pyrolysisThermal barrier coatingÓxidos metálicosSPRAY-PYROLYSISDIELECTRICSnanorakenteetmagnetoelectrics0103 physical sciencesNanolaminatesnanolaminatesSILICON010302 applied physicsZirconiumta114ZRO2 THIN-FILMSCO3O4 FILMSBUFFER LAYERatomikerroskasvatus021001 nanoscience & nanotechnologyElectronic Optical and Magnetic MaterialsTHERMAL BARRIER COATINGSCHEMICAL-VAPOR-DEPOSITIONchemistryChemical engineeringLASER DEPOSITIONNanoláminasatomic layer depositionMetal oxides221 Nano-technologyohutkalvot0210 nano-technologyLayer (electronics)CobaltGAS SENSORS
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Colorimetric gas detection by the varying thickness of a thin film of ultrasmall PTSA-coated TiO2 nanoparticles on a Si substrate

2017

Financial support from the Estonian Research Council (IUT2-25, PUT170, PUT1096, PUT748, PUTJD680), the Estonian Centre of Excellence in Research Projects “Advanced materials and high-technology devices for sustainable energetics, sensorics and nanoelectronics” TK141 (2014-2020.4.01.15-0011), “Emerging orders in quantum and nanomaterials” TK134 and the Development Fund of the University of Tartu, are all gratefully acknowledged.

Materials scienceSiliconAnalytical chemistryGeneral Physics and Astronomychemistry.chemical_element02 engineering and technologySubstrate (electronics)engineering.material010402 general chemistrylcsh:Chemical technology01 natural scienceslcsh:TechnologyCoating:NATURAL SCIENCES:Physics [Research Subject Categories]General Materials Sciencelcsh:TP1-1185Electrical and Electronic EngineeringThin filmAbsorption (electromagnetic radiation)lcsh:ScienceOptical path lengthbusiness.industrylcsh:Tp-toluenesulfonic acid (PTSA)021001 nanoscience & nanotechnologylcsh:QC1-9990104 chemical scienceschemistryengineeringOptoelectronicslcsh:QNaked eye0210 nano-technologybusinessRefractive indexTiO2 nanoparticlescolorimetric gas sensinglcsh:PhysicsBeilstein Journal of Nanotechnology
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Residual crystalline silicon phase in silicon-rich-oxide films subjected to high temperature annealing

2002

Structural properties of silicon rich oxide films (SRO) have been investigated by means of micro-Raman spectroscopy and transmission electron microscopy (TEM). The layers were deposited by plasma enhanced chemical vapor deposition using different SiH4/O2 gas mixtures. The Raman spectra of the as-deposited SRO films are dominated by a broad band in the region 400-500 cm-1 typical of a highly disordered silicon network. After annealing at temperatures above 1000°C in N2, the formation of silicon nanocrystals is observed both in the Raman spectra and in the TEM images. However, most of the precipitated silicon does not crystallize and assumes an amorphous microstructure. © 2002 The Electrochem…

Materials scienceSiliconNanocrystal RamanAnnealing (metallurgy)Analytical chemistrychemistry.chemical_elementMineralogySurfaces Coatings and FilmSettore ING-INF/01 - ElettronicaSettore FIS/03 - Fisica Della Materiasymbols.namesakePlasma-enhanced chemical vapor depositionMaterials ChemistryElectrochemistryCrystalline siliconRAMAN-SPECTROSCOPY; MICROCRYSTALLINE SILICON; THIN-FILMS; SCATTERING; SPECTRA; SUPERLATTICES; NANOCRYSTALS; SIO2-FILMS; SIZERenewable Energy Sustainability and the EnvironmentNanocrystalline siliconSurfaces and InterfacesCondensed Matter PhysicsCrystallographic defectSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsAmorphous solidchemistrysymbolsRaman spectroscopy
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Interfacial reaction during MOCVD growth revealed by in situ ARXPS.

2006

International audience; Angle-resolved X-ray photoelectron spectroscopy (ARXPS) experiments were performed to study in situ the reaction at the film–substrate interface during metal organic chemical vapor deposition (MOCVD) growth of TiO2 thin films deposited on the silicon substrate. The in-depth distribution of chemical species was determined using several ARXPS thickness calculation models considering either single or bilayer systems. By the comparison of two single-layermodels, the presence of a second layer composed of silicon oxidewas evidenced. High-resolution transmission electron microscopy (HRTEM) observations confirmed the stratification of the film in two layers, as well as the …

Materials scienceSiliconthickness measurementthin filmAnalytical chemistrychemistry.chemical_elementARXPS02 engineering and technologyChemical vapor deposition01 natural sciencesX-ray photoelectron spectroscopy0103 physical sciencesMaterials ChemistryTiO2Thin filmSilicon oxideHigh-resolution transmission electron microscopy010302 applied physicsBilayer[CHIM.MATE]Chemical Sciences/Material chemistrySurfaces and InterfacesGeneral Chemistry021001 nanoscience & nanotechnologyCondensed Matter PhysicsSurfaces Coatings and Filmschemistry[ CHIM.MATE ] Chemical Sciences/Material chemistryMOCVDinterfaceWetting0210 nano-technology
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Alumina supported Pt(1%)/Ce0.6Zr0.4O2 monolith: Remarkable stabilization of ceria–zirconia solution towards CeAlO3 formation operated by Pt under red…

2009

Abstract A structured Pt(1 wt%)/ceria–zirconia/alumina catalyst and the metal-free ceria–zirconia/alumina were prepared, by dip-coating, over a cordierite monolithic support. XRD analyses and Rietveld refinements of the structural data demonstrate that in the Pt supported catalysts ceria–zirconia is present as a Ce 0.6 Zr 0.4 O 2 homogeneous solid solution and that the deposition over the cordierite doesn’t produce any structural modification. Moreover no Pt sintering occurs. By comparing the XRD patterns recorded on Pt/ceria–zirconia/alumina and ceria–zirconia/alumina after three redox cycles, it results that Pt, favouring the structural reorganization of the ceria–zirconia into one cubic …

Materials scienceSinteringMineralogyCordieriteengineering.materialHeterogeneous catalysisRedoxCatalysisCatalysiscordierite monolithPt/Ce0.6Zr0.4O2/aluminaCubic zirconiaMonolithCeAlO3 formationGeneral Environmental Sciencegeographygeography.geographical_feature_categoryProcess Chemistry and TechnologyRietveld refinementChemical engineeringSettore CHIM/03 - Chimica Generale E InorganicaTEM/SEM investigationNO SCRengineeringCO and C3H6 oxidationSolid solutionApplied Catalysis B: Environmental
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Au/CeO2-SBA-15 catalysts for CO oxidation: Effect of ceria loading on physic-chemical properties and catalytic performances

2012

In this work gold catalysts supported over SBA-15 with different CeO 2 loadings (5-30 wt%) were prepared, characterized by N 2 physisorption analyses, SAXS, XRD, STEM and XPS techniques and their catalytic performances were evaluated in the CO oxidation, chosen as reaction test. Over a selected catalyst, Au/CeO 2(20 wt%)-SBA-15, the effect of CO 2 and of the mixture (CO 2 + H 2O) on the CO conversion to CO 2 was also evaluated. Characterizations by SAXS, XRD, STEM and XPS were carried out on selected spent catalysts after CO oxidation. The results were discussed in terms of relationship between morphological, structural, electronic and catalytic properties as a function of the ceria loading…

Materials scienceSmall-angle X-ray scatteringOxideNucleationSinteringNanotechnologyGeneral ChemistryCatalysisCatalysischemistry.chemical_compoundAu CeO2 SBA-15 catalysts CO oxidationchemistryX-ray photoelectron spectroscopyChemical engineeringPhysisorptionParticle sizeCatalysis Today
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Dopant solubility in ceria: alloy thermodynamics combined with the DFT+U calculations

2018

This research was partly funded by the Russian Science Foundation (under the project 14-43-0005) and ERA-NET HarvEnPiez project, with the computer resources provided by Stuttgart Supercomputing Centre (Project DEFTD 12939). A. C. also acknowledges financial support from the University of Latvia Foundation (Arnis Riekstins’s ‘‘MikroTik’’ donation). Authors thank R. Merkle, A. Popov for fruitful discussions.

Materials scienceSolid solutionAlloyThermodynamics02 engineering and technologyengineering.material010402 general chemistry01 natural sciences7. Clean energyIonTb:NATURAL SCIENCES:Physics [Research Subject Categories]General Materials ScienceSolubilityDopantGeneral ChemistryAtmospheric temperature range021001 nanoscience & nanotechnologyCondensed Matter Physics0104 chemical sciencesSolubilityAb initioengineeringThermodynamicsDensity functional theory0210 nano-technologyStoichiometrySolid solutionCeO2
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Angle resolved X-ray photoemission spectroscopy double layer model for in situ characterization of metal organic chemical vapour deposition nanometri…

2007

International audience; In situ Angle Resolved X-ray Photoemission Spectroscopy (ARXPS) characterizations of TiO2 thin films grown on silicon by Metal Organic Chemical Vapour Deposition were performed in order to get information on interfacial reactions at the first stages of the growth, one of the aims being to understand the influence of deposition conditions. Thickness measurements were also carried out from ARXPS analyses. As the real structure of the films was shown to be a double layer system such as TiO2/SiO2/Si, an ARXPS model of thickness and surface coverage determination was applied to each layer independently. However, the application of this model to very thin films underestima…

Materials scienceThickness measurementSiliconPhotoemission spectroscopyAnalytical chemistrychemistry.chemical_elementARXPS02 engineering and technologySubstrate (electronics)Chemical vapor deposition01 natural sciences0103 physical sciencesMaterials ChemistryTiO2Metalorganic vapour phase epitaxyThin filmThin filmSilicon oxide010302 applied physicsMetals and AlloysSurfaces and InterfacesInterface021001 nanoscience & nanotechnologySurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialschemistryMOCVD0210 nano-technologyLayer (electronics)
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