Search results for "OEL"

Parasitic Bipolar Action in SiC Power MOSFETs Demonstrated by Two-Photon Laser Experiment

2018

A two-photon absorption technique is explored for Silicon carbide power MOSFETs and power junction barrier Schottky diodes using a pulsed laser. The similarities in design between the specific MOSFETs and diodes tested permit using mechanisms existing in the different structures as explanation for observed current variation with laser position. The diode shows variation in average current with change in laser depth only, whereas the MOSFET shows variation both with shifts in depth and shifts in position across the striped geometry of the device. The variation is explained to be due to bipolar amplification of the charge carriers generated in the MOSFET when a pulse focus includes a channel …

2018

CrN thin films with an N/Cr ratio of 95% were deposited by reactive magnetron sputtering onto (0 0 0 1) sapphire substrates. X-ray diffraction and pole figure texture analysis show CrN (1 1 1) epitaxial growth in a twin domain fashion. By changing the nitrogen versus argon gas flow mixture and the deposition temperature, thin films with different surface morphologies ranging from grainy rough textures to flat and smooth films were prepared. These parameters can also affect the CrN x system, with the film compound changing between semiconducting CrN and metallic Cr2N through the regulation of the nitrogen content of the gas flow and the deposition temperature at a constant deposition pressur…

Quantitative analysis of magnetization reversal in Ni thin films on unpoled and poled (0 1 1) [PbMg1/3Nb2/3O3]0.68–[PbTiO3]0.32piezoelectric substrat…

2016

The field angle dependence of the magnetization reversal in 20 nm thick polycrystalline Ni films grown on piezoelectric (0 1 1) [PbMg1/3Nb2/3O3](0.68)-[PbTiO3](0.32) (PMN-PT) substrates is analysed quantitatively to study the magnetic anisotropy induced in the film by poling the piezosubstrate. While the PMN-PT is in the unpoled state, the magnetization reversal is almost isotropic as expected from the polycrystalline nature of the film and corresponding to an orientation ratio (OR) of 1.2. The orientation ratio is obtained by fitting the angular dependence of normalized remanent magnetization to an adapted Stoner-Wohlfarth relation. Upon poling the piezosubstrate, a strong uniaxial anisotr…

Flash annealing influence on structural and electrical properties of TiO2/TiO/Ti periodic multilayers

2014

Abstract Multilayered structures with a 40 nm period composed of titanium and two different titanium oxides, TiO and TiO 2 , were accurately produced by DC magnetron sputtering using the reactive gas pulsing process. These multilayers were sputtered onto Al 2 O 3 sapphire to avoid substrate compound diffusion during flash annealing (ranging from 350 °C to 550 °C). Structure and composition of these periodic TiO 2 /TiO/Ti stacks were investigated by X-ray diffraction, X-ray photoemission spectroscopy and transmission electronic microscopy techniques. Two crystalline phases α-Ti and fcc-TiO were identified in the metallic-rich sub-layers whereas the oxygen-rich ones were composed of a mixture…

Anomalies of dielectric properties and conductivity in single domain LiNbO3:Zn crystals

2016

ABSTRACTA study of the temperature dependence of dielectric constant, conductivity, and piezoelectric modulus in the single-domain state of LiNbO3 crystals modified by Zn admixture at threshold concentration is reported. Unipolarity of the LiNbO3:Zn crystals is observed to increase after treatment of brand-new samples by high-temperature electro-diffusion annealing and by subsequent high-temperature annealing of short-circuited samples. The observed effects are explained as a result of meta-stable residual domains collapsing at high temperature the collapse being assisted by disintegration of charged clusters stabilizing domain walls. The rise of unipolarity is accompanied by anomalies on t…

Half-Heusler superlattices as model systems for nanostructured thermoelectrics

2015

The efficiency of thermoelectric materials is directly related to the dimensionless figure of merit , therefore, one of the means to improve ZT is to reduce the thermal conductivity. Our research focuses on half-Heusler superlattices (SLs) and the relationship between the SL period and the thermal conductivity. The cross-plane thermal conductivity of DC-sputtered TiNiSn/HfNiSn SLs was measured by the 3 method at room temperature and a clear reduction of was achieved for all SL periods, in particular for periods smaller than 20 nm. Moreover, the thermal conductivities of TiNiSn and HfNiSn single films display reduced values compared to the literature data for bulk materials. Furthermore, we …

Hole localization in thermoelectric half-Heusler (Zr0.5Hf0.5)Co(Sb1−xSn ) thin films

2019

Abstract The (Ti, Zr, Hf)Co(Sb 1 − x Snx) material class has recently come into focus as an attractive p-type high-temperature thermoelectric material. This study experimentally demonstrates that homogeneous, highly textured (Zr0.5Hf0.5)Co(Sb 1 − x Snx) thin films can be grown on single crystalline MgO. By varying the sputter power, samples with both positive and negative Seebeck coefficient can be grown. The underlying reason for the sign change is the segregation of Sn nano-inclusions, which lower the effective doping of the half-Heusler matrix. Similarly the Hall constant also switches sign at low temperatures, which is modeled assuming semi-metal behavior and low temperature hole locali…

Half-Heusler materials as model systems for phase-separated thermoelectrics

2015

Semiconducting half-Heusler compounds based on NiSn and CoSb have attracted attention because of their good performance as thermoelectric materials. Nanostructuring of the materials was experimentally established through phase separation in (T1−x′Tx″)T(M1−yMy′) alloys when mixing different transition metals (T, T′, T″) or main group elements (M, M′). The electric transport properties of such alloys depend not only on their micro- or nanostructure but also on the atomic-scale electronic structure. In the present work, the influence of the band structure and density of states on the electronic transport and thermoelectric properties is investigated in detail for the constituents of phase-sepa…

Modification of magnetic anisotropy in Ni thin films by poling of (011) PMN-PT piezosubstrates

2016

ABSTRACTThis study reports the magnetic and magnetotransport properties of 20 nm thick polycrystalline Ni films deposited by magnetron sputtering on unpoled piezoelectric (011) [PbMg1/3Nb2/3O3]0.68-[PbTiO3]0.32 (PMN-PT) substrates. The magnetoresistance (MR), as well as the magnetization reversal, is found to depend on the polarization state of the piezosubstrate. Upon poling the PMN-PT substrate, which results in a transfer of strain to the Ni film, the MR value decreases by a factor of 12 at room temperature and a factor of 21 at 50 K for the current direction along the PMN-PT [100] direction, and slightly increases for the [01] current direction. Simultaneously, a strong increase in the …

Isothermal relaxation of discommensurations in K2ZnCl4

1994

At the incommensurate-ferroelectric transition temperature T c of K 2 ZnCl 4 , the dielectric susceptibility contains an anomalous contribution both above and below T c . Previous quasi-static dielectric measurements and hysteresis loops demonstrated that this anomalous part arises from the peculiar dynamics of discommensurations. We have used isothermal dielectric measurements to get some insight into the long time dynamics of these discommensurations. We have found that the characteristic relaxation times τ are of the order of 10 4 s in the incommensurate and in the ferroelectric phase. Even more unusual is a non-monotonous relaxation which is observed in a restricted temperature range ab…