Search results for "Optics"
showing 10 items of 10033 documents
Analytic $JV$ -Characteristics of Ideal Intermediate Band Solar Cells and Solar Cells With Up and Downconverters
2017
The ideal diode equation is regularly used to describe the $\textit {JV}$ -characteristic of single junction solar cells. The connection between the diode equation and fundamental physics is the application of the Boltzmann approximation to describe the fluxes of photons emitted by the cell. In this paper, this approximation is used to derive analytic $\textit {JV}$ -characteristics for three photovoltaic high-efficiency concepts, intermediate band solar cells, and solar cells optically coupled to up and downconverters. These three concepts share the common feature that they allow excitation of electrons between at least three energy levels, which assures a better utilization of the solar s…
Enhanced acoustic pressure sensors based on coherent perfect absorber-laser effect
2021
Lasing is a well-established field in optics with several applications. Yet, having lasing or huge amplification in other wave systems remains an elusive goal. Here, we utilize the concept of coherent perfect absorber-laser to realize an acoustic analog of laser with a proven amplification of more than 10 4 in terms of the scattered acoustic signal at a frequency of a few kHz. The obtained acoustic laser (or the coherent perfect absorber-laser) is shown to possess extremely high sensitivity and figure of merit with regard to ultra-small variations of the pressure (density and compressibility) and suggests its evident potential to build future acoustic pressure devices such as precise sensor…
Real space observation of two-dimensional Bloch wave interferences in a negative index photonic crystal cavity
2008
We report here the direct observation of two-dimensional (2D) Bloch wave interferences in a negative index photonic crystal by using optical near-field microscopy techniques. The photonic crystal is formed by a defectless honeycomb lattice of air holes etched in III-V semiconductor slab. A scanning near-field optical microscope is used to visualize spatially, as well as spectrally, the light distribution inside the photonic crystal. The recorded near-field spectra and maps presented here unambiguously demonstrate the Bloch wave interferences within the photonic crystal. Then, the spectral and spatial evolution of these interferences allows us to recover experimentally the 2D band diagram of…
Using of reflections for expansion of frequency tuning in a THz-band gyrotron
2017
Effect of delayed reflection on operation of a second-harmonic THz-band gyrotron is studied. Theoretical analysis, numerical calculations and experimental observations for the 0.394 THz FU CW IIB gyrotron are presented.
Simulations on time-of-flight ERDA spectrometer performance
2016
The performance of a time-of-flight spectrometer consisting of two timing detectors and an ionization chamber energy detector has been studied using Monte Carlo simulations for the recoil creation and ion transport in the sample and detectors. The ionization chamber pulses have been calculated using Shockley-Ramo theorem and the pulse processing of a digitizing data acquisition setup has been modeled. Complete time-of-flight–energy histograms were simulated under realistic experimental conditions. The simulations were used to study instrumentation related effects in coincidence timing and position sensitivity, such as background in time-of-flight–energy histograms. Corresponding measurement…
Framework for complex quantum state generation and coherent control based on on-chip frequency combs
2018
Integrated frequency combs introduce a scalable framework for the generation and manipulation of complex quantum states (including multi-photon and high-dimensional states), using only standard silicon chip and fiber telecommunications components.
The role of disorder on Er3+ luminescence in Na1/2Bi1/2TiO3
2018
Abstract Photoluminescence in Er-doped NBT is studied at different temperatures. Remarkable reduction of the luminescence intensity in the green spectral range is found in the poled state comparing with the depoled state. Luminescence spectra at low temperatures reveal continuous wavelength shift of some maxima belonging to the 4 S 3/2 → 4 I 15/2 transition depending on the excitation wavelength, which is explained by large variety of different environments around Er 3+ related to the random distribution of Na + and Bi 3+ in A-sublattice of the ABO 3 perovskite structure. Poling extends the wavelength range where shift of luminescence maxima is observed in the direction of longer excitati…
Nanoscale Etching of GaAs and InP in Acidic H<sub>2</sub>O<sub>2</sub> Solution: A Striking Contrast in Kinetics and Surface …
2018
In this study of nanoscale etching for state-of-the-art device technology the importance of the nature of the surface oxide, is demonstrated for two III-V materials. Etching kinetics for GaAs and InP in acidic solutions of hydrogen peroxide are strikingly different. GaAs etches much faster, while the dependence of the etch rate on the H+ concentration differs markedly for the two semiconductors. Surface analysis techniques provided information on the surface composition after etching: strongly non-stoichiometric porous (hydr)oxides on GaAs and a thin stoichiometric oxide that forms a blocking layer on InP. Reaction schemes are provided that allow one to understand the results, in particular…
Development of hard x-ray photoelectron SPLEED-based spectrometer applicable for probing of buried magnetic layer valence states
2016
Abstract A novel design of high-voltage compatible polarimeter for spin-resolved hard X-ray photoelectron spectroscopy (Spin-HAXPES) went into operation at beamline BL09XU of SPring-8 in Hyogo, Japan. The detector is based on the well-established principle of electron diffraction from a W(001) single-crystal at a scattering energy of 103.5 eV. It's special feature is that it can be operated at a high negative bias potential up to 10 kV, necessary to access the HAXPES range. The polarimeter is operated behind a large hemispherical analyzer (Scienta R-4000). It was optimized for high transmission of the transfer optics. A delay-line detector (20 mm dia.) is positioned at the exit plane of the…
Refractive index controlled by film morphology and free carrier density in undoped ZnO through sol-pH variation
2018
Abstract Zinc oxide thin films, prepared by the sol-gel process, were deposited on glass substrate using spin coating technique. The sol-pH effect on the optical parameters was studied for alkaline sol. The surface roughness was investigated by atomic force microscopy (AFM) and varied from 20 to 40 nm. The optical transmission measurements were carried out to evaluate the behavior of the extinction coefficient and the refractive index. An exponential decay of the refractive index ‘n’ as a function of wavelength was observed. The refractive index increases slightly when the pH increases to pH = 9.5 where it reaches its maximum. Beyond this value, it decreases sharply. This behavior has been …