Search results for "Optoelectronics"
showing 10 items of 2306 documents
Challenges with balancing excitations in intermediate-band solar cells
2015
New insight into the potential of practical solar cells can be given through alternative modeling approaches like Monte Carlo simulations. In the present work, the performance of intermediate band solar cells was examined by this method. It is demonstrated that the balance of excitations from the valence band to the intermediate band and from the intermediate band to the conduction band is of great importance for the performance of such cells. Several cases with different distributions of photons given by ASTM standards have been employed in order to detect spectrum sensitivity. Incident photons are accounted for as they interact with the electrons in the valence band or in the intermediate…
Background and muon counting rates in underground muon measurements with a plastic scintillator counter based on a wavelength shifting fibre and a mu…
2010
AbstractIn this short note we present results of background measurements carried out with polystyrene based cast plastic 12.0×12.0×3.0 cm3 size scintillator counter with a wavelength shifting fibre and a multi-pixel Geiger mode avalanche photodiode readout in the Baksan underground laboratory at a depth of 200 metres of water equivalent. The total counting rate of the scintillator counter measured at this depth and at a threshold corresponding to ∼0.37 of a minimum ionizing particle is approximately 1.3 Hz.
Operation of transition-edge sensors with excess thermal noise
2006
The superconducting transition-edge sensor (TES) is currently one of the most attractive choices for ultra-high resolution calorimetry in the keV x-ray band, and is being considered for future ESA and NASA missions. We have performed a study on the noise characteristics of Au/Ti bilayer TESs, at operating temperatures around ~100 mK, with the SQUID readout at 1.5 K. Experimental results indicate that without modifications the back-action noise from the SQUID chip degrades the noise characteristics significantly. We present a simple and effective solution to the problem: by installing an extra shunt resistor which absorbs the excess radiation from the SQUID input, we have reduced the excess …
Up to Date Version of a Computer-Driven Noise Figure Measuring System for the Simultaneous Determination of Noise, Gain and Scattering Parameters of …
1995
The complete characterization of microwave transistors in terms of (four) noise, (four) gain and scattering parameters sets ({N), {G) and [SI, respectively) vs. frequency and bias conditions (and also vs. decreasing temperature, if required) is the first and most important step to design low noise amplifiers (LNAs). The characterization of the device under test (DUT) in terms of [SI is friendly by means of commercial Automatic Network Analyzer; then the { G) set may be determined by computation.
Analytical Dynamics of Optical Similaritons
2007
We analytically describe the attraction of parabolic pulses towards a self-similar state in weakly dispersive nonlinear fibers with linear gain.
Time response of avalanche photodiodes as a function of the internal gain
1998
Abstract Using a red LED and a blue laser as a light source, time response of avalanche photodiodes and Metal-Resistive Silicon (MRS) layer avalanche photodiodes [1] has been measured. A strong dependence of the time resolution on the internal gain has been observed. The obtained results show that the increase of the internal gain improves the time resolution. However, there exists a critical value for the internal gain. Beyond this value a deterioration of the time resolution is observed.
Time-dependent electric field in Al/CdTe/Pt detectors
2015
Abstract Al/CdTe/Pt detectors are very attractive devices for high-resolution X-ray spectroscopy, even though they suffer from bias-induced time instability (polarization). Polarization phenomena cause a progressive time-degradation of the spectroscopic performance of the detectors, due to hole trapping and detrapping from deep acceptor levels that directly control the electric field distribution. In this work we present experimental investigations on the electric field profile of planar Al/CdTe/Pt detectors by means of Pockels effect measurements. The time/temperature dependence of the electric field was investigated in a long time window (up to 10 h) and the correlation with the reverse c…
Improving the Performance of Quasi-Hemispherical CdZnTe Detectors Using Infrared Stimulation
2012
The influence of monochromatic optical stimulation with wavelengths from 400 to 1100 nm on the characteristics of CdZnTe quasi-hemispherical detectors was studied. It was found that illumination with infrared (IR) light with wavelengths of 870-900 nm close to the absorption edge of the CdZnTe significantly improves the performance of the detector at room temperature. Improvement can be achieved with low-intensity IR illumination at 1-300 μW depending on the chosen wavelength of illumination. Higher intensity illumination was observed to lead to the degradation of the detector's spectrometric characteristics. IR radiation was noted to influence the detector's sensitivity, changing the equili…
A comparison of the performance of irradiated p-in-n and n-in-n silicon microstrip detectors read out with fast binary electronics
2000
Abstract Both n-strip on n-bulk and p-strip on n-bulk silicon microstrip detectors have been irradiated at the CERN PS to a fluence of 3×10 14 p cm −2 and their post-irradiation performance compared using fast binary readout electronics. Results are presented for test beam measurements of the efficiency and resolution as a function of bias voltage made at the CERN SPS, and for noise measurements giving detector strip quality. The detectors come from four different manufacturers and were made as prototypes for the SemiConductor Tracker of the ATLAS experiment at the CERN LHC.
Beam test of the ATLAS silicon detector modules
1998
Abstract Results are reported from a beam test of prototype silicon microstrip detectors and front-end electronics developed for use in the LHC detector ATLAS. The detector assemblies (“modules”) were 12 cm long and were read out with binary electronics. Both irradiated and unirradiated modules were measured in a 1.56 T magnetic field for efficiency, noise occupancy, and position resolution as a function of bias voltage, binary hit threshold, and detector rotation angle with respect to the beam direction.