Search results for "Optoelectronics"
showing 10 items of 2306 documents
Time-dependent screening explains the ultrafast excitonic signal rise in 2D semiconductors
2020
We calculate the time evolution of the transient reflection signal in an MoS$_2$ monolayer on a SiO$_2$/Si substrate using first-principles out-of-equilibrium real-time methods. Our simulations provide a simple and intuitive physical picture for the delayed, yet ultrafast, evolution of the signal whose rise time depends on the excess energy of the pump laser: at laser energies above the A- and B-exciton, the pump pulse excites electrons and holes far away from the K valleys in the first Brillouin zone. Electron-phonon and hole-phonon scattering lead to a gradual relaxation of the carriers towards small $\textit{Active Excitonic Regions}$ around K, enhancing the dielectric screening. The acc…
Photonic crystal intermediate reflector in micromorph tandem solar cells
2011
Experimental and numerical evidences are presented which show that the efficiency of silicon based tandem solar-cells can be increased by incorporating a three-dimensional photonic crystal as an intermediate reflector.
Towards low-energy-light-driven bistable photoswitches : ortho-fluoroaminoazobenzenes
2021
AbstractThermally stable photoswitches that are driven with low-energy light are rare, yet crucial for extending the applicability of photoresponsive molecules and materials towards, e.g., living systems. Combined ortho-fluorination and -amination couples high visible light absorptivity of o-aminoazobenzenes with the extraordinary bistability of o-fluoroazobenzenes. Herein, we report a library of easily accessible o-aminofluoroazobenzenes and establish structure–property relationships regarding spectral qualities, visible light isomerization efficiency and thermal stability of the cis-isomer with respect to the degree of o-substitution and choice of amino substituent. We rationalize the exp…
Energy conversion efficiency in betavoltaic cells based on the diamond Schottky diode with a thin drift layer
2020
The HPHT diamond Schottky diode was assembled as a Metal/Intrinsic/p-doped structure betavoltaic cell (BC) with a very thin (1 μm) drift layer and tested under 5–30 keV electron beam irradiation using a scanning electron microscope (SEM). The effect of the β-radiation energy and the backscattering of electrons on the energy conversion was studied. From the results obtained, it is shown that, the efficiency of the investigated BC increases from 1.01 to 3.75% with the decrease of β-particle energy from 30 to 5 keV due to an increase of the electron beam absorption in a thin drift layer. Maximum efficiency is achieved when the electron beam energy is close to the average β-decay energy of 3H. …
Nano-lithography by electron exposure using an Atomic Force Microscope
1999
Abstract We have used a conductive Atomic Force Microscope (AFM) tip to expose a very thin resist film. An exposing current of low energy electrons was induced from the tip to the substrate by applying a small bias voltage. Uniform resist films as thin as 10 nm were fabricated using the Langmuir–Blodgett technique. To orient the defined pattern and to make electrical connections a special larger scale alignment structure was first defined by conventional electron beam lithography, either directly in the Langmuir–Blodgett resist film or in a separate first lift-off process with a thicker resist. The results from the one resist process gave conducting 50 nm lines with a 60 A thick vacuum depo…
Conductive and Capacitive Properties of the Bipolar Membrane Junction Studied by AC Impedance Spectroscopy
2001
The complete ac impedance spectrum of four bipolar membranes is analyzed both theoretically and experimentally taking into account both ionic transport and water dissociation together with the structural aspects of the bipolar junction. A theoretical model based on the Nernst-Planck and Poisson equations for the conductive and capacitive properties of the junction provides a qualitative description of the bipolar membranes for a broad range of electric currents and temperatures. Special attention is paid to the characteristics of the bipolar junction structure and the contact region between the two ion-exchange layers. It is observed that the effective area of this region increases with the…
Quantum wells within quantum dots, a CdS/HgS nanoheterostructure with global and local confinement
1998
Semiconductor nanocrystals prepared by methods of wet chemistry are similar to MBE grown quantum dots where the mobility of the charge carriers is reduced to zero dimensionality. In this paper we summarize the physics of a unique system in which the charge carriers are locally confined within a heterogeneous quantum dot. With high resolution electron microscopy we will show that epitaxial growth ot atomic layer precision is possible by methods of solution chemistry leading to CdS quantum dots with embedded HgS quantum wells (QDQWs). The photophysics of this system is investigated by time-correlated single photon counting, transient differential absorption and fluorescence line narrowing spe…
ZnO/CdTe/CuSCN, a promising heterostructure to act as inorganic eta-solar cell
2005
Abstract The ZnO/CdTe/CuSCN heterostructure was analyzed as a candidate to act as an inorganic eta -solar cell. A ZnO film consisting of single crystal nanocolumns was electrodeposited on a transparent conducting substrate which acts as n-type material. As absorber material we used CdTe, which was deposited on the ZnO columnar film by Metal Organic Chemical Vapor Deposition. In order to complete the eta -solar cell we deposited a CuSCN layer by chemical solution deposition. A conformal and uniform CdTe coverage of the ZnO columns was achieved, producing a very efficient light trapping effect. The effective absorption (∼87%) and effective reflectance (∼10%) of the complete heterostructure in…
The laser-plotter: A versatile lithographic tool for integrated optics and microelectronics
1992
Abstract The apparatus described here represents a low cost approach to artwork generation for integrated optics and microelectronics, in the resolution range around 2 μm. Its main characteristics are given below, together with some examples of the kind of patterns it can generate.
Design and development of a fNIRS system prototype based on SiPM detectors
2014
Functional Near Infrared Spectroscopy (fNIRS) uses near infrared sources and detectors to measure changes in absorption due to neurovascular dynamics in response to brain activation. The use of Silicon Photomultipliers (SiPMs) in a fNIRS system has been estimated potentially able to increase the spatial resolution. Dedicated SiPM sensors have been designed and fabricated by using an optimized process. Electrical and optical characterizations are presented. The design and implementation of a portable fNIRS embedded system, hosting up to 64 IR-LED sources and 128 SiPM sensors, has been carried out. The system has been based on a scalable architecture whose elementary leaf is a flexible board …