Search results for "Optoelectronics"

Microfabricated high temperature sensing platform dedicated to scanning thermal microscopy (SThM)

2018

Abstract The monitoring of heat flux is becoming more and more critical for many materials and structures approaching nanometric dimensions. Scanning Thermal Microscopy (SThM) is one of the tools available for thermal measurement at the nanoscale and requires calibration. Here we report on a micro-hotplate device made of a platinum heater suspended on thin silicon nitride (SiN) membranes integrating specific features for SThM calibration. These heated reference samples can include a localized resistive temperature sensors (RTD) or standalone platinum membranes (typically 10 × 10 μm2) on which the temperature can be measured precisely. This functional area is dedicated to (1) estimate the th…

Measurement of the activation energies of oxygen ion diffusion in yttria stabilized zirconia by flicker noise spectroscopy

2019

The low-frequency noise in a nanometer-sized virtual memristor consisting of a contact of a conductive atomic force microscope (CAFM) probe to an yttria stabilized zirconia (YSZ) thin film deposited on a conductive substrate is investigated. YSZ is a promising material for the memristor application since it is featured by high oxygen ion mobility, and the oxygen vacancy concentration in YSZ can be controlled by varying the molar fraction of the stabilizing yttrium oxide. Due to the low diameter of the CAFM probe contact to the YSZ film (similar to 10nm), we are able to measure the electric current flowing through an individual filament both in the low resistive state (LRS) and in the high r…

Silicon dosimeters based on Floating Gate Sensor: design, implementation and characterization

2020

A rad-hard monolithic dosimeter has been implemented and characterized in a standard 180 nm CMOS technology. The radiation sensor (C-sensor) is based on a Floating Gate (FG) MOS discharge principle. The output current is processed by a current-to-voltage (I/V) interface and then converted by a 5-bit flash ADC. The dosimeter is re-usable (FG can be recharged) and can detect a dose up to 1krad (Si) with a resolution of 30rad (Si) typical over temperature 0 to 85°C range. The ADC allows easy further signal processing for calibration and averaging, etc. The power consumption of C-sensor plus I/V interface is < 2mW from a 5 V power supply. The overall layout area is less than 0.25mm2. The Rad…

Simplified feedback control system for scanning tunneling microscopy

2021

A Scanning Tunneling Microscope (STM) is one of the most important scanning probe tools available to study and manipulate matter at the nanoscale. In a STM, a tip is scanned on top of a surface with a separation of a few \AA. Often, the tunneling current between tip and sample is maintained constant by modifying the distance between the tip apex and the surface through a feedback mechanism acting on a piezoelectric transducer. This produces very detailed images of the electronic properties of the surface. The feedback mechanism is nearly always made using a digital processing circuit separate from the user computer. Here we discuss another approach, using a computer and data acquisition thr…

Optical studies of MBE-grown InN nanocolumns: Evidence of surface electron accumulation

2009

ZnMgO-based UV photodiodes: a comparison of films grown by spray pyrolysis and MBE

2016

Detecting the UV part of the spectrum is fundamental for a wide range of applications where ZnMgO has the potential to play a central role. The shortest achievable wavelength is a function of the Mg content in the films, which in turn is dependent on the growth technique. Moreover, increasing Mg contents lead to an electrical compensation of the films, which directly affects the responsivity of the photodetectors. In addition, the metal-semiconductor interface and the presence of grain boundaries have a direct impact on the responsivity through different gain mechanisms. In this work, we review the development of ZnMgO UV Schottky photodiodes using molecular beam epitaxy and spray pyrolysis…

Optical properties and microstructure of 2.02-3.30 eV ZnCdO nanowires: effect of thermal annealing

2013

International audience; ZnCdO nanowires with up to 45% Cd are demonstrated showing room temperature photoluminescence (PL) down to 2.02 eV and a radiative efficiency similar to that of ZnO nanowires. Analysis of the microstructure in individual nanowires confirms the presence of a single wurtzite phase even at the highest Cd contents, with a homogeneous distribution of Cd both in the longitudinal and transverse directions. Thermal annealing at 550 C yields an overall improvement of the PL, which is blue-shifted as a result of the homogeneous decrease of Cd throughout the nanowire, but the single wurtzite structure is fully maintained.

High sensitivity characterization of the nonlinear electric susceptibility of a glass ceramic in the microwave range

2019

The nonlinear electric susceptibility of a glass ceramic is characterized in the microwave range by measuring intermodulation of two high-power signals. To achieve the necessary sensitivity for dielectric nonlinearities, the setup ensures that the measured intermodulation can be ascribed to the material under test while all other intermodulation sources are suppressed. This is achieved by coupling three dielectric resonators in a cut-off waveguide. The third order nonlinearity of the glass ceramic is found to be χ3/er = (1.6 ± 0.8) × 10−15 m2/V2 at 950 MHz. The magnitude is comparable to the previously measured high-end sintered ceramics. The power of the intermodulation signal as a functio…

Simulation of IQE tuning of individual cells for DC-balancing multijunction tandem cells

2016

In the present work, the performance of stacks of cells connected in series is examined at different levels of internal quantum efficiency (IQE). Incident photons, generated by employing the ASTM G173-03 data set, are accounted for individually as they interact with the stack of cells. The efficiencies of the devices studied are dependent upon the DC balance throughout the stack of cells. It is demonstrated that reducing the internal quantum efficiency of upper cells can lead to a better DC balance and thereby higher efficiency.

Comparaison expérimentale de techniques de caractérisation en intensité et phase d'impulsions optiques ultracourtes

2006

Nous comparons experimentalement les resultats de la caracterisation en intensite et en phase d'impulsions optiques ultracourtes obtenus par differentes techniques employant un montage auto/inter-correlateur en intensite et un analyseur de spectre. Nous employons pour ces tests une impulsion en limite de Fourier, une impulsion affectee par l'auto-modulation de phase et une impulsion similariton.