Search results for "Optoelectronics"
showing 10 items of 2306 documents
Microwave characterization and modeling of packaged HEMTs by a direct extraction procedure at cryogenic temperatures
2004
In the present work we employ a direct extraction procedure to determine small signal equivalent circuit of microwave GaAs FETs by means of scattering (S-) parameter measurements down to cryogenic temperatures. The direct extraction procedure was tested on packaged AlGaAs/InGaAs HEMTs and good agreement between the simulated and measured S-parameters was obtained at different bias and temperature conditions. We employed a properly designed cryogenic set-up operating in our laboratory that allows to perform DC and RF characterization down to 30 K.
Colloidal plasmonic back reflectors for light trapping in solar cells.
2014
A novel type of plasmonic light trapping structure is presented in this paper, composed of metal nanoparticles synthesized in colloidal solution and self-assembled in uniform long-range arrays using a wet-coating method. The high monodispersion in size and spherical shape of the gold colloids used in this work allows a precise match between their measured optical properties and electromagnetic simulations performed with Mie theory, and enables the full exploitation of their collective resonant plasmonic behavior for light-scattering applications. The colloidal arrays are integrated in plasmonic back reflector (PBR) structures aimed for light trapping in thin film solar cells. The PBRs exhib…
Electrical and optical low frequency noises in multimodal vertical cavity surface emitting lasers
2006
Experimental investigations of the low frequency noise of multimode 780 nm vertical cavity surface emitting lasers are reported. Electrical noise, optical noise and their correlation have been measured in the frequency range 1 Hz–95 kHz. The results show that the main contribution to the electrical noise is located in the distributed Bragg reflector layers of the laser. The optical power and pump current noise sources are strongly correlated below and around the threshold, while are weakly correlated above threshold. It is argued that the noise in the optical power is due to both free injection carrier noise and optical gain fluctuations.
In-fiber time-resolved acousto-optics
2014
Time-resolved in-fiber acousto-optics permit the measurement of sub-ppm perturbations of the modal dispersion curves along sections of fiber exceeding 1 m long, with a spatial resolution in the order of few cm.
Extremely efficient evaluation of chromatic dispersion in realistic photonic crystal fibers
2004
We present a fast and accurate procedure for the evaluation of chromatic dispersion in photonic crystal fibers. It combines an iterative Fourier technique to compute the propagation constant at any fixed wavelength and an analytical approach to calculate its derivatives.
Suppression of pulse pedestal using nonlinear optical loop mirrors in grating-compensated dispersion-managed fiber transmission systems
2006
Pulse pedestal suppression by nonlinear optical loop mirrors is utilized to reduce the intersymbol interference caused by the group delay ripples of a real grating profile in dispersion-managed communication systems compensated by chirped fiber gratings.
Giant Enhancement in the Supercapacitance of NiFe–Graphene Nanocomposites Induced by a Magnetic Field
2019
The rapid rise in energy demand in the past years has prompted a search for low-cost alternatives for energy storage, supercapacitors being one of the most important devices. It is shown that a dramatic enhancement (≈1100%, from 155 to 1850 F g-1 ) of the specific capacitance of a hybrid stimuli-responsive FeNi3 -graphene electrode material can be achieved when the charge/discharge cycling is performed in the presence of an applied magnetic field of 4000 G. This result is related to an unprecedented magnetic-field-induced metal segregation of the FeNi3 nanoparticles during the cycling, which results in the appearance of small Ni clusters (<5 nm) and, consequently, in an increase in pseudoca…
Dielectric-loaded plasmonic waveguide components: Going practical
2013
Surface plasmon propagating modes supported by metal/dielectric interfaces in various configurations can be used for radiation guiding similarly to conventional dielectric waveguides. Plasmonic waveguides offer two attractive features: subdiffraction mode confinement and the presence of conducting elements at the mode-field maximum. The first feature can be exploited to realize ultrahigh density of nanophotonics components, whereas the second feature enables the development of dynamic components controlling the plasmon propagation with ultralow signals, minimizing heat dissipation in switching elements. While the first feature is yet to be brought close to the domain of practical applicatio…
Surface plasmon subwavelength optics.
2003
International audience; Surface plasmons are waves that propagate along the surface of a conductor. By altering the structure of a metal's surface, the properties of surface plasmons- in particular their interaction with light-can be tailored, which offers the potential for developing new types of photonic device. This could lead to miniaturized photonic circuits with length scales that are much smaller than those currently achieved. Surface plasmons are being explored for their potential in subwavelength optics, data storage, light generation, microscopy and bio-photonics.
Spatial carrier distribution in InP/GaAs type II quantum dots and quantum posts
2011
We performed a detailed investigation of the structural and optical properties of multi-layers of InP/GaAs quantum dots, which present a type II interface arrangement. Transmission electronic microscopy analysis has revealed relatively large dots that coalesce forming so-called quantum posts when the GaAs layer between the InP layers is thin. We observed that the structural properties and morphology affect the resulting radiative lifetime of the carriers in our systems. The carrier lifetimes are relatively long, as expected for type II systems, as compared to those observed for single layer InP/GaAs quantum dots. The interface intermixing effect has been pointed out as a limiting factor for…