Search results for "Optoelectronics"
showing 10 items of 2306 documents
Heavy-ion induced single event effects and latent damages in SiC power MOSFETs
2022
The advantages of silicon carbide (SiC) power MOSFETs make this technology attractive for space, avionics and high-energy accelerator applications. However, the current commercial technologies are still susceptible to Single Event Effects (SEEs) and latent damages induced by the radiation environment. Two types of latent damage were experimentally observed in commercial SiC power MOSFETs exposed to heavy-ions. One is observed at bias voltages just below the degradation onset and it involves the gate oxide. The other damage type is observed at bias voltages below the Single Event Burnout (SEB) limit, and it is attributed to alterations of the SiC crystal-lattice. Focused ion beam (FIB) and s…
Incident angle effect on heavy ion induced reverse leakage current in SiC Schottky diodes
2016
Heavy-ion induced degradation in the reverse leakage current of SiC Schottky power diodes shows distinct dependence on the angle of incidence. TCAD simulations have been used to study the physical mechanisms involved.
Structural defects in Hg1−xCdxI2 layers grown on CdTe substrates by vapor phase epitaxy
1997
Hg1−xCdxI2 20–25-μm-thick layers with a uniform composition in the range of x = 0.1–0.2 were grown on CdTe substrates by vapor phase epitaxy (VPE). The growth was carried out using an α-HgI2 polycrystalline source at 200 °C and in the time range of 30–100 h. The layers were studied by scanning electron microscopy (SEM) and high resolution synchrotron x-ray topography (SXRT). The SEM and SXRT images of Hg1−xCdxI2 VPE layers allow one to identify the defects affecting the layer structure. The two main types of structural defects in the layers are subgrain boundaries and densely spaced striations similar to those referred generally to as vapor grown HgI2 bulk crystals. The effect of the growth…
Spectroscopic Properties of Holmium-Aluminum-Germanium Co-doped Silica Fiber
2020
We report the basic spectroscopic properties of a home-made holmium-aluminum-germanium co-doped silica fiber, designed for laser applications. We present the ground-state and excited-state absorpti...
Experimental investigation of Brillouin and Raman scattering in a 2SG sulfide glass microstructured chalcogenide fiber.
2008
International audience; In this work, we investigate the Brillouin and Raman scattering properties of a Ge15Sb20S65 chalcogenide glass microstructured single mode fiber around 1.55 microm. Through a fair comparison between a 2-m long chalcogenide fiber and a 7.9-km long classical single mode silica fiber, we have found a Brillouin and Raman gain coefficients 100 and 180 larger than fused silica, respectively.
Tb/s switching fabrics for optical interconnects using heterointegration of plasmonics and silicon photonics: The FP7 PLATON approach
2010
We present recent work that is carried out within the FP7 project PLATON on novel Tb/s switch fabric architectures and technologies for optical interconnect applications, employing heterointegration of plasmonics, silicon photonics and electronics.
Telecom to mid-infrared supercontinuum generation in a silicon germanium waveguide
2015
We report the first demonstration of broadband supercontinuum generation in silicon-germanium waveguides. Upon propagation of ultra-short femtosecond pulses in a 3-cm-long waveguide, the broadening extended from 1.455µm to 2.788µm (at the −30-dB point).
Optical propagation loss measurements in electro optical host-guest waveguides
2013
Thin organic waveguiding layers are applied more and more frequently as optical components in novel optoelectronic devices. For development of such devices it is important to know the optical properties of the used waveguides. One of the most important parameters is optical propagation loss in the waveguide. In this paper we present optical propagation loss measurements in planar electro optical waveguides using travelling fiber method. Using this method attenuation coefficient α at 633 nm as a function of chromophore concentration for the first two guiding modes in the slab waveguide was determined.
Colorimetric gas detection by the varying thickness of a thin film of ultrasmall PTSA-coated TiO2 nanoparticles on a Si substrate
2017
Financial support from the Estonian Research Council (IUT2-25, PUT170, PUT1096, PUT748, PUTJD680), the Estonian Centre of Excellence in Research Projects “Advanced materials and high-technology devices for sustainable energetics, sensorics and nanoelectronics” TK141 (2014-2020.4.01.15-0011), “Emerging orders in quantum and nanomaterials” TK134 and the Development Fund of the University of Tartu, are all gratefully acknowledged.
Carrier-induced quenching processes on the erbium luminescence in silicon nanocluster devices
2006
The luminescence-quenching processes limiting quantum efficiency in Er-doped silicon nanocluster light-emitting devices are investigated and identified. It is found that carrier injection, while needed to excite Er ions through electron-hole recombination, at the same time produces an efficient nonradiative Auger deexcitation with trapped carriers. This phenomenon is studied in detail and, on the basis of its understanding, we propose device structures in which sequential injection of electrons and holes can improve quantum efficiency by avoiding Auger processes. © 2006 The American Physical Society.