Search results for "Optoelectronics"

Potential of amorphous Mo–Si–N films for nanoelectronic applications

2003

The properties of amorphous metallic molybdenum–silicon–nitrogen (Mo–Si–N) films were characterised for use in nanoelectronic applications. The films were deposited by co-sputtering of molybdenum and silicon targets in a gas mixture of argon and nitrogen. The atomic composition, microstructure and surface roughness were studied by RBS, TEM and AFM analyses, respectively. The electrical properties were investigated in the temperature range 80 mK to 300 K. No transition into a superconductive state was observed. Nanoscale wires were fabricated using electron beam lithography with their properties measured as a function of temperature.

Metalenses with high-NA, enhanced resolution and apodization

2017

Dielectric microlenses employed in imaging and focusing for optoelectronics are currently prospects to be substituted by metalenses showing an extraordinary optical performance within notably reduced volumes. Here we present some proposals to achieve an enhanced resolution in metallodielectric metasurface-based lenses established on either efficient arrangements with high numerical aperture or spatial filtering enabling to surpass the limit of resolution derived by the Rayleigh criterion.

High Resolution X-Ray Spectroscopy with Compound Semiconductor Detectors and Digital Pulse Processing Systems

2012

The advent of semiconductor detectors has revolutionized the broad field of X-ray spectroscopy. Semiconductor detectors, originally developed for particle physics, are now widely used for X-ray spectroscopy in a large variety of fields, as X-ray fluorescence analysis, X-ray astronomy and diagnostic medicine. The success of semiconductor detectors is due to several unique properties that are not available with other types of detectors: the excellent energy resolution, the high detection efficiency and the possibility of development of compact detection systems. Among the semiconductors, silicon (Si) detectors are the key detectors in the soft X-ray band (15 keV) and will continue to be the c…

Hard X-Ray Response of Pixellated CdZnTe Detectors

2009

In recent years, the development of cadmium zinc telluride (CdZnTe) detectors for x-ray and gamma ray spectrometry has grown rapidly. The good room temperature performance and the high spatial resolution of pixellated CdZnTe detectors make them very attractive in space-borne x-ray astronomy, mainly as focal plane detectors for the new generation of hard x-ray focusing telescopes. In this work, we investigated on the spectroscopic performance of two pixellated CdZnTe detectors coupled with a custom low noise and low power readout application specific integrated circuit (ASIC). The detectors (10x10x1 and 10x10x2 mm3 single crystals) have an anode layout based on an array of 256 pixels with a …

Transmission Efficiency of the SAGE Spectrometer Using GEANT4

2013

The new SAGE spectrometer allows simultaneous electron and γ-ray in-beam studies of heavy nuclei. A comprehensive GEANT4 simulation suite has been created for the SAGE spectrometer. This includes both the silicon detectors for electron detection and the germanium detectors for γ-ray detection. The simulation can be used for a wide variety of tests with the aim of better understanding the behaviour of SAGE. A number of aspects of electron transmission are presented here.

A review of the development of portable laser induced breakdown spectroscopy and its applications

2014

Abstract In this review, we present person-transportable laser induced breakdown spectroscopy (LIBS) devices that have previously been developed and reported in the literature as well as their applications. They are compared with X-ray fluorescent (XRF) devices, which represent their strongest competition. Although LIBS devices have advantages over XRF devices, such as sensitivity to the light elements, high spatial resolution and the possibility to distinguish between different layers of the sample, there are also disadvantages and both are discussed here. Furthermore, the essential portable LIBS instrumentation (laser, spectrograph and detector) is presented, and published results related…

Generation of broadband THz transients via metallic spintronic emitters driven by 20-fs pulses at 1030 nm

2020

We explore power and bandwidth scaling for the generation of highly-temporally-confined THz transients from spintronic emitters, driven by the 250-fs and 20-fs pulses of a high-power 28-MHz Yb-based laser, spectrally centered at 1030 nm.

Exploring room-temperature transport of single-molecule magnet-based molecular spintronics devices using the magnetic tunnel junction as a device pla…

2019

A device architecture utilizing a single-molecule magnet (SMM) as a device element between two ferromagnetic electrodes may open vast opportunities to create novel molecular spintronics devices. Here, we report a method of connecting an SMM to the ferromagnetic electrodes. We utilized a nickel (Ni)–AlOx–Ni magnetic tunnel junction (MTJ) with the exposed side edges as a test bed. In the present work, we utilized an SMM with a hexanuclear [Mn6(μ3-O)2(H2N-sao)6(6-atha)2(EtOH)6] [H2N-saoH = salicylamidoxime, 6-atha = 6-acetylthiohexanoate] complex that is attached to alkane tethers terminated with thiols. These Mn-based molecules were electrochemically bonded between the two Ni electrodes of an…

Design of Molecular Spintronics Devices Containing Molybdenum Oxide as Hole Injection Layer

2017

Effect of DC Electric Field on the Emitted THz Signal of Antenna-Coupled Spintronic Emitters

2019

We study the impact of an external electric DC field on antenna-coupled spintronic THz emitters driven by a 90 fs, 1550 nm laser oscillator. Simultaneous application of external electric and magnetic field shows a quadratic decrease in peak-peak THz pulse with increase in the bias voltage. We ascribe this decrease to Joule heating caused by the DC current flowing through the spintronic material.