Search results for "POINT"

showing 10 items of 4385 documents

An anomalous wave formation at the Al/Cu interface during magnetic pulse welding

2020

This paper reports an anomalous wave formation at an Al/Cu bimetallic interface produced by magnetic pulse welding. The mechanism of the anomalous wave formation is investigated using both metallurgical characterization and the interface kinematics. It reveals that the anomalous wave is formed with the combination of the intermediate zone and the interdiffusion zone with a thickness of 70 nm, wherein the intermediate zone is caused by the local melting due to the high shear instability, and the interdiffusion zone is formed below the melting point of aluminum combined with ultrahigh heating and cooling rates of about 10^13 °C s^−1. A multiphysics simulation of impact welding has been perfor…

010302 applied physicsMaterials scienceCondensed matter physicsPhysics and Astronomy (miscellaneous)Multiphysicschemistry.chemical_element02 engineering and technologyWelding021001 nanoscience & nanotechnology01 natural scienceslaw.inventionCharacterization (materials science)Shear (sheet metal)Magnetic pulse weldingchemistrylawAluminium0103 physical sciencesMelting point0210 nano-technologyBimetallic strip
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B-Scan image analysis for position and shape defect definition in plates

2016

Definition of size, shape and location of defects into a mechanical component is of extreme importance in the manufacturing industry in general and particularly in high-tech applications, and in applications that can become dangerous due to the structural failure of mechanical components. In this paper, a laser-UT system has been used to define position and shape of internal defects in aluminum plates. An infrared pulsed laser is used to generate ultrasonic waves in a point of the plate and a CW laser interferometer is used as receiver to acquire the out-of-plane displacements due to the ultrasonic waves in another point of the plate. The method consists of acquiring a B-Scan map on which s…

010302 applied physicsMaterials scienceNDEbusiness.industryAcousticsCw laser01 natural sciencesMechanical componentsImage (mathematics)InterferometryVirtual imagePosition (vector)defect definitionLaser Ultrasonic0103 physical sciencesPoint (geometry)Computer visionUltrasonic sensorArtificial intelligencebusiness010301 acousticsB-scan image analysi
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Modelling of thermal field and point defect dynamics during silicon single crystal growth using CZ technique

2018

Abstract Silicon single crystal growth by the Czochralski (CZ) technique is studied numerically using non-stationary mathematical models which allow to predict the evolution of the CZ system in time, including Dash neck, cone and cylindrical growth stages. The focus is on the point defect dynamics, also considering the effect of the thermal stresses. During the cylindrical stage, the crystal pull rate is temporarily reduced as in experiments by Abe et al. The crystal radius and heater power change is explicitly considered in the calculations for crystal diameters of 50, 100 and 200 mm and the agreement with experiments is discussed.

010302 applied physicsMaterials scienceSiliconField (physics)Mathematical modelchemistry.chemical_element02 engineering and technologyRadiusMechanics021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesInorganic ChemistryCrystalchemistry0103 physical sciencesThermalMaterials ChemistryPoint (geometry)0210 nano-technologyFocus (optics)Journal of Crystal Growth
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Effect of process parameters and crystal orientation on 3D anisotropic stress during CZ and FZ growth of silicon

2017

Abstract Simulations of 3D anisotropic stress are carried out in and oriented Si crystals grown by FZ and CZ processes for different diameters, growth rates and process stages. Temperature dependent elastic constants and thermal expansion coefficients are used in the FE simulations. The von Mises stress at the triple point line is ~5–11% higher in crystals compared to crystals. The process parameters have a larger effect on the von Mises stress than the crystal orientation. Generally, the crystal has a higher azimuthal variation of stress along the triple point line (~8%) than the crystal (~2%). The presence of a crystal ridge increases the stress beside the ridge and decreases it on the ri…

010302 applied physicsMaterials scienceSiliconTriple pointPhysics::Opticschemistry.chemical_element02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter PhysicsRidge (differential geometry)01 natural sciencesThermal expansionInorganic ChemistryStress (mechanics)CrystalCrystallographychemistryCondensed Matter::Superconductivity0103 physical sciencesMaterials Chemistryvon Mises yield criterionComposite material0210 nano-technologyLine (formation)Journal of Crystal Growth
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Application of enthalpy model for floating zone silicon crystal growth

2017

Abstract A 2D simplified crystal growth model based on the enthalpy method and coupled with a low-frequency harmonic electromagnetic model is developed to simulate the silicon crystal growth near the external triple point (ETP) and crystal melting on the open melting front of a polycrystalline feed rod in FZ crystal growth systems. Simulations of the crystal growth near the ETP show significant influence of the inhomogeneities of the EM power distribution on the crystal growth rate for a 4 in floating zone (FZ) system. The generated growth rate fluctuations are shown to be larger in the system with higher crystal pull rate. Simulations of crystal melting on the open melting front of the pol…

010302 applied physicsMaterials scienceTriple pointPhysics::OpticsCrystal growth02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesMolecular physicsInorganic ChemistryCrystalMonocrystalline siliconCrystallographyCondensed Matter::Superconductivity0103 physical sciencesMaterials ChemistryLaser-heated pedestal growthCrystalliteGrowth rate0210 nano-technologySeed crystalJournal of Crystal Growth
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Reversed polarized emission in highly strained a-plane GaN/AlN multiple quantum wells

2010

The polarization of the emission from a set of highly strained $a$-plane GaN/AlN multiple quantum wells of varying well widths has been studied. A single photoluminescence peak is observed that shifts to higher energies as the quantum well thickness decreases due to quantum confinement. The emitted light is linearly polarized. For the thinnest samples the preferential polarization direction is perpendicular to the wurtzite $c$ axis with a degree of polarization that decreases with increasing well width. However, for the thickest well the preferred polarization direction is parallel to the $c$ axis. Raman scattering, x-ray diffraction, and transmission electron microscopy studies have been p…

010302 applied physicsPhysicsElectron densityCondensed matter physicsLinear polarizationOscillator strengthQuantum point contact: Physics [G04] [Physical chemical mathematical & earth Sciences]Infinitesimal strain theory02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesElectronic Optical and Magnetic MaterialsCondensed Matter::Materials Science: Physique [G04] [Physique chimie mathématiques & sciences de la terre]Quantum dotQuantum mechanics0103 physical sciences[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Degree of polarization0210 nano-technologyQuantum wellComputingMilieux_MISCELLANEOUS
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Calculation of the electrostatic field in a dielectric-loaded waveguide due to an arbitrary charge distribution on the dielectric layer

2016

The goal of this paper is to study the electrostatic field due to an arbitrary charge distribution on a dielectric layer in a dielectric-loaded rectangular waveguide. In order to obtain this electrostatic field, the potential due to a point charge on the dielectric layer is solved in advance. The high computational complexity of this problem requires the use of different numerical integration techniques (e.g., Filon, Gauss-Kronrod, Lobatto, …) and interpolation methods. Using the principle of superposition, the potential due to an arbitrary charge distribution on a dielectric layer is obtained by adding the individual contribution of each point charge. Finally, a numerical differentiation o…

010302 applied physicsPhysicsMultipactor effectPoint particlePhysics::OpticsCharge density020206 networking & telecommunications02 engineering and technologyDielectricElectrostatics01 natural sciencesComputational physicsElectric field0103 physical sciences0202 electrical engineering electronic engineering information engineeringDouble layer potentialElectric potential2016 Progress in Electromagnetic Research Symposium (PIERS)
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Optical study for springback prediction, thickness reduction and forces variations on single point incremental forming

2019

Abstract The goal of the present work is to present an experimental study regarding the influence of the main technological influence factors such as the vertical step and the punch diameter on the single point incremental forming process (SPIF). In this paper we estimate the influence of these two factors on springback, thickness reduction and forces. Both parameters were varied on two levels: (d) punch diameter 6 and 10 mm and (s) vertical step 0,1 and 0,5 mm. The experiments were done on experimental layout composed by a robot, a clamping system that contains the die’s lower part and the optical system.

010302 applied physicsWork (thermodynamics)Materials sciencebusiness.product_categorybusiness.industryForming processes02 engineering and technologyStructural engineering021001 nanoscience & nanotechnology01 natural sciencesClampingReduction (complexity)0103 physical sciencesRobotDie (manufacturing)Single point0210 nano-technologybusinessMaterials Today: Proceedings
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High excitations in coupled-cluster series: vibrational energy levels of ammonia

2004

The ammonia molecule containing large amplitude inversion motion is a revealing system in examining high-order correlation effects on potential energy surfaces. Correlation contributions to the equilibrium and saddle point geometries, inversion barrier height and vibrational energy levels, including inversion splittings, have been investigated. A six-dimensional Taylor-type series expansion of the Born–Oppenheimer potential energy surface, which is scaled to different levels of theory, is used to determine vibrational energy levels and inversion splittings variationally. The electronic energies are calculated by coupled-cluster methods, combining explicitly correlated R12 theory (which incl…

010304 chemical physicsElectronic correlationChemistryBiophysics010402 general chemistryCondensed Matter Physics01 natural sciencesPotential energyFull configuration interaction0104 chemical sciencesCoupled clusterSaddle point0103 physical sciencesPotential energy surfacePhysical and Theoretical ChemistryAtomic physicsWave functionSeries expansionMolecular BiologyMolecular Physics
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Single Enantiomer’s Urge to Crystallize in Centrosymmetric Space Groups: Solid Solutions of Phenylpiracetam

2017

A detailed thermochemical and structural study of the phenylpiracetam enantiomer system was performed by characterizing the solid solutions, rationalizing the structural driving force for their formation, as well as identifying a common structural origin responsible for the formation of solid solutions of enantiomers. Enantiomerically pure phenylpiracetam forms two enantiotropically related polymorphs (enant–A and enant–B). The transition point (70(7) °C) was determined based on isobaric heat capacity measurements. Structural studies revealed that enant–A and enant–B crystallize in space groups P1 (Z′ = 4) and P212121 (Z′ = 2), respectively. However, pseudoinversion centers were present res…

010405 organic chemistryChemistrySpace groupGeneral Chemistry010402 general chemistryCondensed Matter PhysicsCentrosymmetry01 natural sciencesMiscibilityHeat capacity0104 chemical sciencesCrystallographyTransition pointIsobaric processGeneral Materials ScienceEnantiomerSolid solutionCrystal Growth & Design
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