Search results for "POLARIZATION"

showing 10 items of 1884 documents

Mapping the polarization pattern of plasmon modes reveals nanoparticle symmetry.

2008

We study the wavelength and polarization dependent plasmon resonances of single silver and gold nanorods, triangles, cubes, and dimers with a novel single particle spectroscopy method (RotPOL). In RotPOL, a rotating wedge-shaped polarizer encodes the full polarization information of each particle within one image. This reveals the symmetry of the particles and their plasmon modes, allows analyzing inhomogeneous samples and the monitoring of particle shape changes during growth in situ.

Materials scienceSilverPhysics::OpticsMetal NanoparticlesBioengineeringElectronMolecular physicslaw.inventionOpticsMicroscopy Electron TransmissionlawPhysics::Atomic and Molecular ClustersGeneral Materials ScienceAnisotropySpectroscopyPlasmonbusiness.industryMechanical EngineeringGeneral ChemistryPolarizerCondensed Matter PhysicsPolarization (waves)AnisotropyNanorodGoldbusinessLocalized surface plasmonNano letters
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Preparation of Heusler thin films: The quaternary alloy CO2Fe0.5Mn0.5Si

2008

In this work the basic strategies for the preparation of CO2Mn0.5Fe0.5Si as an example for Heusler alloy thin films will be described. Texture and magnetic properties of these films will be discussed, especially with regard to different buffer layers and annealing temperatures. Finally, we will show the integration of Heusler thin films into magnetic tunnel junctions (MTJs) and calculate the effective spin polarization. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Materials scienceSpin polarizationCondensed matter physicsAnnealing (metallurgy)MetallurgyAlloyIron alloysSurfaces and Interfacesengineering.materialCondensed Matter PhysicsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsTunnel junctionMaterials ChemistryengineeringQuaternary alloyCathode sputteringElectrical and Electronic EngineeringThin film
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Preparation and Investigation of Interfaces of Co2Cr1−x Fe x Al Thin Films

2013

In the framework of spin polarization investigations of Heusler compounds by the measurement of the magnetoresistance (TMR) of tunneling junctions with AlO x barrier special emphasis is put on the role of the interfaces.

Materials scienceSpin polarizationCondensed matter physicsMagnetoresistanceThin filmQuantum tunnelling
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Spin-resolved terahertz spectroscopy

2016

As such, terahertz spectroscopy cannot resolve the spin structure of conducting particles. Here we introduce the spin sensitivity to terahertz spectroscopy by using the spin-valve configuration of the sample. As a result, the number density and momentum scattering time of conduction electrons in a ferromagnetic metal can be resolved according to their spin.

Materials scienceSpin polarizationCondensed matter physicsTerahertz radiationScatteringPhysics::Optics02 engineering and technologySpin structure021001 nanoscience & nanotechnology01 natural sciencesMolecular physicsTerahertz spectroscopy and technology0103 physical sciencesCondensed Matter::Strongly Correlated Electrons010306 general physics0210 nano-technologyTerahertz time-domain spectroscopySpectroscopySpin-½2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz)
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Epitaxial film growth and magnetic properties ofCo2FeSi

2006

We have grown thin films of the Heusler compound ${\mathrm{Co}}_{2}\mathrm{Fe}\mathrm{Si}$ by RF magnetron sputtering. On (100)-oriented MgO substrates we find fully epitaxial (100)-oriented and $L{2}_{1}$ ordered growth. On ${\mathrm{Al}}_{2}{\mathrm{O}}_{3}(11\overline{2}0)$ substrates, the film growth is (110)-oriented, and several in-plane epitaxial domains are observed. The temperature dependence of the electrical resistivity shows a power law with an exponent of $7∕2$ at low temperatures. Investigation of the bulk magnetic properties reveals an extrapolated saturation magnetization of $5.0{\ensuremath{\mu}}_{B}∕\mathrm{f.u.}$ at $0\phantom{\rule{0.3em}{0ex}}\mathrm{K}$. The films on $…

Materials scienceSpin polarizationMagnetic momentCondensed matter physicsMagnetic circular dichroismSputter depositionengineering.materialCondensed Matter PhysicsHeusler compoundElectronic Optical and Magnetic MaterialsCondensed Matter::Materials ScienceMagnetizationElectrical resistivity and conductivityengineeringAnisotropyPhysical Review B
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Lattice Instability and Competing Spin Structures in the Double Perovskite InsulatorSr2FeOsO6

2013

The semiconductor Sr2FeOsO6, depending on temperature, adopts two types of spin structures that differ in the spin sequence of ferrimagnetic iron-osmium layers along the tetragonal c axis. Neutron powder diffraction experiments, 57Fe Mossbauer spectra, and density functional theory calculations suggest that this behavior arises because a lattice instability resulting in alternating iron-osmium distances fine-tunes the balance of competing exchange interactions. Thus, Sr2FeOsO6 is an example of a double perovskite, in which the electronic phases are controlled by the interplay of spin, orbital, and lattice degrees of freedom.

Materials scienceSpin polarizationMössbauer effectCondensed matter physicsbusiness.industryGeneral Physics and AstronomyInstabilityCondensed Matter::Materials ScienceTetragonal crystal systemSemiconductorFerrimagnetismLattice (order)Condensed Matter::Strongly Correlated ElectronsDensity functional theorybusinessPhysical Review Letters
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Spin-polarized photoelectrons resonantly excited by circularly polarized light from a fractional Ag film on GaAs(100)

2013

We demonstrate a finite spin polarization of photoelectrons emitted from GaAs(100) covered by a fractional Ag film. The photoemission yield shows a sharp maximum for intermediate coverage and the spin polarization increases with increasing laser intensity. Photoelectrons are excited by circularly polarized 100 fs laser pulses of 800 nm wavelength. We recorded the photoemitted electrons using a photoemission electron microscope combined with a Mott spin polarimeter. The spin polarization is analyzed in dependence on the excitation frequency and intensity and on the average thickness of the silver film. The results are explained by a model combining multiphoton photoemission and optical field…

Materials scienceSpin polarizationPolarimeterElectronPhotoelectric effectCondensed Matter PhysicsLaserElectronic Optical and Magnetic Materialslaw.inventionCondensed Matter::Materials SciencelawExcited stateCondensed Matter::Strongly Correlated ElectronsAtomic physicsSpin (physics)Circular polarizationPhysical Review B
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Unidirectional Spin Hall Magnetoresistance as a Tool for Probing the Interfacial Spin Polarization of Co2MnSi

2019

Materials with high spin polarization, such as Heusler compounds, are required for efficient spintronics. The authors propose an approach to probe the transport spin polarization at interfaces, using the recently discovered unidirectional spin Hall magnetoresistance. They show that insertion of thin Ag(001) layers clearly increases the interfacial spin polarization of the Heusler compound Co${}_{2}$MnSi, which is crucial for giant-magnetoresistance devices.

Materials scienceSpin polarizationSpintronicsCondensed matter physicsMagnetoresistanceengineeringGeneral Physics and Astronomyengineering.materialHeusler compoundSpin (physics)Physical Review Applied
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Doping dependence of spin dynamics of drifting electrons in GaAs bulks

2010

We study the effect of the impurity density on lifetimes and relaxation lengths of electron spins in the presence of a static electric field in a n-type GaAs bulk. The transport of electrons and the spin dynamics are simulated by using a semiclassical Monte Carlo approach, which takes into account the intravalley scattering mechanisms of warm electrons in the semiconductor material. Spin relaxation is considered through the D'yakonov-Perel mechanism, which is the dominant mechanism in III-V semiconductors. The evolution of spin polarization is analyzed by computing the lifetimes and depolarization lengths as a function of the doping density in the range 10^{13} - 10^{16} cm^{-3}, for differ…

Materials scienceSpin polarized transport in semiconductorCondensed matter physicsSpinsSpin polarizationScatteringbusiness.industryDopingGeneral Physics and AstronomyFOS: Physical sciencesElectronSpin relaxation and scatteringSettore FIS/03 - Fisica Della MateriaCondensed Matter - Other Condensed MatterSemiconductorElectric fieldCondensed Matter::Strongly Correlated ElectronsSpin-orbit couplingSpin (physics)businessOther Condensed Matter (cond-mat.other)
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Hyperpolarization of cis ‐ 15 N 2 ‐Azobenzene by Parahydrogen at Ultralow Magnetic Fields**

2021

The development of nuclear spins hyperpolarization, and the search for molecules that can be efficiently hyperpolarized is an active area in nuclear magnetic resonance. In this work we present a detailed study of SABRE SHEATH (signal amplification by reversible exchange in shield enabled alignment transfer to heteronuclei) experiments on 15 N2 -azobenzene. In SABRE SHEATH experiments the nuclear spins of the target are hyperpolarized through transfer of spin polarization from parahydrogen at ultralow fields during a reversible chemical process. Azobenzene exists in two isomers, trans and cis. We show that all nuclear spins in cis-azobenzene can be efficiently hyperpolarized by SABRE at suit…

Materials scienceSpin statesSpinsSpin polarization02 engineering and technology010402 general chemistry021001 nanoscience & nanotechnologySpin isomers of hydrogen01 natural sciences7. Clean energyAtomic and Molecular Physics and Optics0104 chemical sciences3. Good healthchemistry.chemical_compoundMagnetizationAzobenzenechemistryHyperpolarization (physics)Singlet statePhysical and Theoretical ChemistryAtomic physics0210 nano-technologyChemPhysChem
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