Search results for "PPI"
showing 10 items of 7396 documents
Global Lp -integrability of the derivative of a quasiconformal mapping
1988
Let f be a quasiconformal mapping of an open bounded set U in Rn into Rn . Then f′ belongs to Lp(U) for some p > n provided that f satisfies (a) U is a uniform domain and fU is a John domain or (b) f is quasisymmetric and U satisfies a metric plumpness condition.
Migration kinetics of ion-implanted beryllium in glassy carbon
2008
Abstract Migration kinetics of low-concentration implanted 7 Be in glassy carbon has been studied by the modified radiotracer technique at temperatures 1285 °C and 1340 °C. The annealed sample concentration profiles show two distinctive components: (i) Main profile broadening assigned to beryllium trapping in defects during annealing. (ii) Tail parts on both sides of the profile maximum related to faster migration. Of the latter the profile representing bulk diffusion lies on the region free of defect influence and is well described by concentration-independent diffusivity. The features of the concentration profile broadening towards the sample surface indicate partial Be trapping in defect…
Recent improvements on micro-thermocouple based SThM
2017
The scanning thermal microscope (SThM) has become a versatile tool for local surface temperature mapping or measuring thermal properties of solid materials. In this article, we present recent improvements in a SThM system, based on a micro-wire thermocouple probe associated with a quartz tuning fork for contact strength detection. Some results obtained on an electrothermal micro-hotplate device, operated in active and passive modes, allow demonstrating its performance as a coupled force detection and thermal measurement system.
Multi-pulse characterization of trapping/detrapping mechanisms in AlGaN/GaN high electromobility transistors
2019
GaN high-electro mobility transistors (HEMTs) are among the most promising candidates for use in high-power, high-frequency, and high-temperature electronics owing to their high electrical breakdown threshold and their high saturation electron velocity. The applications of these AlGaN/GaN HEMTs in power converters are limited by the surface trapping effects of drain-current collapse. Charge-trapping mechanisms affect the dynamic performance of all GaN HEMTs used in power switching applications. This study analyzes the dynamic resistance of GaN HEMTs and finds that the effects of dynamic resistance can be suppressed by controlling switching conditions and on-off cycles.
The ${JV}$ -Characteristic of Intermediate Band Solar Cells With Overlapping Absorption Coefficients
2017
An analytic expression for the $\textit {JV}$ -characteristic of intermediate band (IB) solar cells with overlapping absorption coefficients is derived. The characteristic contains six voltage-independent parameters that are calculated from material properties, cell properties, and external conditions. Combined with exponential functions containing the cell voltage, these describe the full $\textit {JV}$ -characteristic. Expressions are also derived for the short-circuit current and open-circuit voltage. The model represents a major simplification compared with the existing model for this type of devices. The simplicity will facilitate the understanding of the operation of such cells. Furth…
Positron Annihilation Lifetime Spectroscopy Insight on Free Volume Conversion of Nanostructured MgAl2O4 Ceramics
2021
H.K. and A.I.P. are grateful for the support from the COST Action CA17126. H.K. was also supported by the Ministry of Education and Science of Ukraine (project for young researchers No. 0119U100435). In addition, I.K. and H.K. were also supported by the National Research Foundation of Ukraine via project 2020.02/0217, while the research of A.I.P. was funded by the Latvian research council via the Latvian National Research Program under the topic ?High-Energy Physics and Accelerator Technologies?, Agreement No: VPP-IZM-CERN-2020/1-0002. In addition, the research of A.I.P. has been supported by the Latvian-Ukrainian Grant LV-UA/2021/5. The Institute of Solid State Physics, University of Latvi…
Positron trapping defects in free-volume investigation of Ge–Ga–S–CsCl glasses
2016
Abstract Evolution of free-volume positron trapping defects caused by crystallization process in (80GeS 2 –20Ga 2 S 3 ) 100−х (СsCl) x , 0 ≤ x ≤ 15 chalcogenide-chalcohalide glasses was studied by positron annihilation lifetime technique. It is established that CsCl additives in Ge–Ga–S glassy matrix transform defect-related component spectra, indicating that the agglomeration of free-volume voids occurs in initial and crystallized (80GeS 2 –20Ga 2 S 3 ) 100−х (СsCl) x , 0 ≤ x ≤ 10 glasses. Void fragmentation in (80GeS 2 –20Ga 2 S 3 ) 85 (СsCl) 15 glass can be associated with loosing of their inner structure. Full crystallization in each of these glasses corresponds to the formation of defe…
Steering the excited state dynamics of a photoactive yellow protein chromophore analogue with external electric fields
2014
Abstract The first excited state of the Photoactive Yellow Protein chromophore exhibits a strong charge transfer character and the dipole moments of the excited and ground states differ significantly. Furthermore, the excited state charge distribution changes during the isomerization of this chromophore. These observations suggest that external electric fields can be used to control photo-isomerization, providing a new concept for developing photochromic devices, such as e-paper or optical memory. To test this idea, we performed excited state dynamics simulations and static calculations of a PYP chromophore analogue (pCK − ) in an external electric field. By adjusting direction and strength…
Photoionization cross sections of the 5S1/2 and 5P3/2 states of Rb in simultaneous magneto-optical trapping of Rb and Hg
2018
We report the measurement of the photoionization cross sections of the $5{S}_{1/2}$ and $5{P}_{3/2}$ states of $^{87}\mathrm{Rb}$ in a two-species Hg and Rb magneto-optical trap (MOT) by the cooling laser for Hg. The photoionization cross sections of Rb in the $5{S}_{1/2}$ and $5{P}_{3/2}$ states at 253.7 nm are determined to be ${1}_{\ensuremath{-}1}^{+4.3}\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}20}\phantom{\rule{0.28em}{0ex}}{\text{cm}}^{2}$ and $4.63(30)\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}18}\phantom{\rule{0.28em}{0ex}}{\text{cm}}^{2}$, respectively. To measure the $5{S}_{1/2}$ and $5{P}_{3/2}$ state fractions in the MOT we detected the photoionization rat…