Search results for "Passivation"
showing 10 items of 91 documents
A study of electrochemically-induced corrosion of low carbon steel in a medium modelling acid rain
1994
Complementary electrochemical, spectrophotometric and electron microsopic investigations were made in addition to the conversion electron Mossbauer spectroscopic (CEMS) measurements to learn more about the mechanism of corrosion of low carbon steel samples in aqueous sulfate and sulfite containing sulfate solutions (pH 3.5, 6.5 and 8.5). Passivation of iron in pure sulfate solution was studied in detail in earlier papers. In the present work, we used a solution containing both sulfate and sulfite anions to obtain more information about the effect of acid rain on low carbon steel samples. The compositions and thicknesses of the passive films formed due to the electrochemical treatments were …
conversion electron Mössbauer study of low carbon steel polarized in aqueous sulfate solution containing sulfite in low concentration
1992
The passivation of low carbon steel was studied in aqueous solution of 0.5 M Na2SO4+0.001 M NaHSO3 at pH=3.5 and 6.5. The found major components at pH-3.5 were: γ-FeOOH and Fe3C, and also FeSO4.H2O could be identified on the surface of the low carbon steel as a minor component. At pH-6.5, the passive film contained only amorphous iron(III)-oxide or oxyhydroxide.
Electrochemical and conversion electron mössbauer study of corrosion induced by acid rain
1993
Abstract The passivation of low carbon steel was studied in aqueous solution of 0.5M Na2SO4 +0.001M NaHSO3 (pH 3.5, 6.5 and 8.5) which can be considered as a model of acid rain. The used conversion electron Mossbauer spectroscopy (CEMS) with the complementary electrochemical investigations proved that the sulfite ions induce pitting corrosion at pH 3.5 and 6 5 while the measurements showed much weaker pitting at pH 8.5. The compositions and thicknesses of the passive films formed during the electrochemical treatments are determined from the CEM spectra. Only γ-FeOOH was found on the surface of the samples at pH 6.5 and 8.5. Nevertheless, at pH 3.5 the sextet belonging to Fe3C appears in the…
The passivation of steel in sodium sulphate solution studied by CEMS and aes
1990
The passive layer formed on standard steel by anodic oxidation in 0.5 M sodium sulphate solution was found to contain iron only in the trivalent state. The thickness of the layer increases with the applied potential as well as with the time the passivating potential is applied to the sample. These results, compared with the electrochemical data, lead to the suggestion that the passive behaviour is not due to the whole oxidic layer but due to a thin, low lying interfacial layer with a structural disorder.
Tracking with heavily irradiated silicon detectors operated at cryogenic temperatures
1998
In this work we show that a heavily irradiated double-sided silicon microstrip detector recovers its performance when operated at cryogenic temperatures. A DELPHI microstrip detector, irradiated to a fluence of /spl sim/4/spl times/10/sup 14/ p/cm/sup 2/, no longer operational at room temperature, cannot be distinguished from a non-irradiated one when operated at T<120 K. Besides confirming the previously observed 'Lazarus effect' in single diodes, these results establish, for the first time, the possibility of using standard silicon detectors for tracking applications in extremely demanding radiation environments.
Results on radiation hardness of black silicon induced junction photodetectors from proton and electron radiation
2020
Abstract The stability of black silicon induced junction photodetectors under high-energy irradiation was tested with 11 MeV protons and 12 MeV electrons using fluence of 1 ⋅ 10 10 protons/cm2 and dose of 67 krad(Si) for protons and electrons, respectively. The energies and dose levels were selected to test radiation levels relevant for space applications. The degradation was evaluated through dark current and external quantum efficiency changes during (within 1 h after each step) and after (some days after) full irradiation sequences. Furthermore, the black silicon photodetectors were compared to planar silicon induced junction and planar silicon pn-junction photodetectors to assess the co…
Optimization of semiconductor halide perovskite layers to implement waveguide amplifiers
2017
Semiconductor organometallic halide (CH 3 NH 3 PbX 3 , X=Cl, Br, I) perovskites (HPVK) have been emerged as a potential gain media to construct a new generation of active photonic devices. Indeed, during the last three years a significant effort has been carried out to implement HPVK-based optical amplifiers or lasers with improved quality factors. In particular, minimization of the threshold of stimulated emission has been an important concern to decrease the power consumption, and hence to enhance the performances of the device. For this purpose strategies include a suitable integration of the semiconductor in a photonic structure, or the optimization of the material. Here we propose a no…
Enhancement of the Performance of Perovskite Solar Cells, LEDs, and Optical Amplifiers by Anti-Solvent Additive Deposition
2016
The efficiency of perovskite optoelectronic devices is increased by a novel method; its suitability for perovskite solar cells, light-emitting diodes, and optical amplifiers is demonstrated. The method is based on the introduction of organic additives during the anti-solvent step in the perovskite thin-film deposition process. Additives passivate grain boundaries reducing non-radiative recombination. The method can be easily extended to other additives.
Ozone-Based Atomic Layer Deposition of Al2O3 from Dimethylaluminum Chloride and Its Impact on Silicon Surface Passivation
2017
Dimethylaluminum chloride (DMACl) as an aluminum source has shown promising potential to replace more expensive and commonly used trimethylaluminum in the semiconductor industry for atomic layer deposited (ALD) thin films. Here, the Al2O3 DMACl-process is modified by replacing the common ALD oxidant, water, by ozone that offers several benefits including shorter purge time, layer-by-layer growth, and improved film adhesion. It is shown that the introduction of the ozone instead of water increases carbon and chlorine content in the Al2O3, while long ozone pulses increase the amount of interfacial hydrogen at silicon surface. These are found to be beneficial effects regarding the surface pass…
Effect of ozone concentration on silicon surface passivation by atomic layer deposited Al2O3
2015
Abstract We study the impact of ozone-based Al2O3 Atomic Layer Deposition (ALD) on the surface passivation quality of crystalline silicon. We show that the passivation quality strongly depends on the ozone concentration: the higher ozone concentration results in lower interface defect density and thereby improved passivation. In contrast to previous studies, our results reveal that too high interface hydrogen content can be detrimental to the passivation. The interface hydrogen concentration can be optimized by the ozone-based process; however, the use of pure ozone increases the harmful carbon concentration in the film. Here we demonstrate that low carbon and optimal hydrogen concentration…