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RESEARCH PRODUCT
Tracking with heavily irradiated silicon detectors operated at cryogenic temperatures
S. SaladinoPeter ChochulaI. KonorovV.g. PalmieriP. BartaliniB.m. BarnettG. RuggieroKevin M. SmithL. CasagrandeSergio PaganoI. StavitskiC. ParkesJan BuytaertW. H. BellA. EspositoT. J. V. BowcockD. SteeleT. RufSoumen PaulP. CollinsK. PretzlL. SchmittP. SondereggerT. O. NiinikoskiR. FreiK. BorerV. GranataF. VitobelloHans DijkstraO. DormondS. JanosCarlos LourencoC. Da Viasubject
Nuclear and High Energy PhysicsMaterials sciencePassivationSiliconbusiness.industryDetectorchemistry.chemical_elementRadiationTracking (particle physics)FluenceNuclear Energy and EngineeringchemistryOptoelectronicsIrradiationDetectors and Experimental TechniquesElectrical and Electronic EngineeringbusinessDiodedescription
In this work we show that a heavily irradiated double-sided silicon microstrip detector recovers its performance when operated at cryogenic temperatures. A DELPHI microstrip detector, irradiated to a fluence of /spl sim/4/spl times/10/sup 14/ p/cm/sup 2/, no longer operational at room temperature, cannot be distinguished from a non-irradiated one when operated at T<120 K. Besides confirming the previously observed 'Lazarus effect' in single diodes, these results establish, for the first time, the possibility of using standard silicon detectors for tracking applications in extremely demanding radiation environments.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 1998-12-08 | IEEE Transactions on Nuclear Science |