Search results for "Power MOSFET"

showing 3 items of 23 documents

Estimating Terrestrial Neutron-Induced SEB Cross-Sections and FIT Rates for High-Voltage SiC Power MOSFETs

2019

Cross sections and failure in time rates for neutron-induced single-event burnout (SEB) are estimated for SiC power MOSFETs using a method based on combining results from heavy ion SEB experimental data, 3-D TCAD prediction of sensitive volumes, and Monte Carlo radiation transport simulations of secondary particle production. The results agree well with experimental data and are useful in understanding the mechanisms for neutron-induced SEB data.

Radiation transportSiCcross-sectionNuclear and High Energy PhysicsMaterials scienceMonte Carlo method01 natural sciencesIonpowerchemistry.chemical_compoundMOSFETneutronsilicon carbide0103 physical sciencesMOSFETSilicon carbideNeutronElectrical and Electronic EngineeringPower MOSFETMonte Carlosingle event burnoutta114ta213SEB010308 nuclear & particles physicsHigh voltageFITheavy ionComputational physicsNuclear Energy and Engineeringchemistrysäteilyfysiikkatransistoritfailure in timeMREDIEEE Transactions on Nuclear Science
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A lossless current sensing technique for flyback converters

2009

Regardless of the feedback control, almost all converters require input or output current sense for overcurrent protection. If a current mode control is implemented, high accuracy is also required. The optimal current sensing method shows the highest accuracy and the lowest power dissipation. In this paper, a lossless and accurate current sensing technique for Flyback converters is proposed. An RC network is parallel connected with the primary MOSFET and the voltage signal across the sense capacitor accurately reproduces the magnetizing current waveform. The RC technique benefits from all the advantages of the most common current sensing techniques currently applied to Flyback converters, a…

business.industryFlyback converterComputer scienceFlyback transformerElectrical engineeringSense (electronics)ConvertersCurrent transformerOvercurrentlaw.inventionCapacitorlawMOSFETElectronic engineeringResistorPower MOSFETbusinessRC circuitPulse-width modulationVoltage2009 35th Annual Conference of IEEE Industrial Electronics
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Dangerous Effects Induced on Power MOSFETs by Terrestrial Neutrons

2013

This paper investigates the effects that terrestrial neutrons can induce on power MOSFETs when they are biased during their normal working conditions especially in inverters for photovoltaic applications. After a brief review of power MOSFETs failure phenomena caused by neutron irradiation (with emphasis on so called “Single Event Effects” (SEE)), the results of an accelerated test performed with the Am-Be source at the University of Palermo are discussed.

reliabilitypower MOSFETaccelerated testSEBSettore ING-IND/20 - Misure E Strumentazione NucleariTerrestrial neutronAm-Be sourceSettore ING-INF/01 - ElettronicaSEESEGR
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