Search results for "Power electronics"
showing 10 items of 80 documents
Vircator Technologies Comparison and Novel Anode Analysis
2021
High Power Microwave (HPM) sources are widely used as signal sources in radar, jammer, and Counter Improvised Explosive Devices (CIED). Such devices usually are heavy and bulky, characteristics that are in conflict with the small weight and power (SWaP) approach so that it is practically impossible to mount such HPMs on several platforms with reduced spaces (e.g., avionic, UAVs). During the last century, several devices have been proposed, all of them heavy due to the components that they need such as the magnetic material of the Magnetron, Klystron, or Gyrotron. Considering the HPM sources for pulsed applications, the VIRtual CAThode oscillatOR (Vircator) represents the best candidate due …
Impact of RES penetration on the frequency dynamics of the 500 kV vietnamese power system
2019
The increase of renewable energy sources (RES) typically operating as converter-interfaced generation (CIG) is progressively causing a significant change of power systems operation paradigm. The reduction of the overall available kinetic energy and the consequent impact on the dynamic response of the system is a relevant issue currently under investigation in academic and industrial scopes. The work analyzes the impact of different CIG penetration in the three areas of the 500 kV Vietnamese power system, North, Center and South. The system is modified substituting conventional synchronous generation with converter-interfaced generation. The models of power converters and corresponding contr…
Design optimization for the quench protection of DTT's superconducting toroidal field magnets
2021
Abstract The paper is focused on the optimal design of Fast Discharge Unit (FDU) for the quench protection of the Toroidal Field (TF) magnets of the Divertor Tokamak Test facility (DTT), an experimental facility under construction in ENEA Frascati Research Centre (Rome, Italy). The FDU is a safety key component that protects the superconducting magnets when a quench is detected through the fast extraction of the energy stored in the magnets by adding a discharge dump resistor (DR) in the TF magnets circuit. A comparison between a fixed DR and a switched variable DR has been implemented by changing resistor parameters and by using multiple current control of the power electronics components …
High frequency modeling technique for three phase power electronics module
2015
Nowadays, the high integrated power electronics modules (PMs), characterized by high speed, low loss and hard ware miniaturization, represent a new technology that meets the emerging demands of many applications, such us vehicle and home appliance, renewable energy sources in smart grid. The integration process and the high switching speeds increase the PM electromagnetic emissions that can create electromagnetic interference (EMI) with electric/electronic devices near the PMs. For this reason, electromagnetic compatibility (EMC) have to be carefully considered, yet in the design phase, to guarantee the reliability of PM systems. In this paper a method to develop a high frequency (HF) model…
Quasi-static magnetoresistive sensor modeling for current-time conversion circuit applications
2011
In this paper we report a current-to-time converter (CTC) suitable for current sensor monitoring in low power applications. Based on a discrete resistence-to-frequency converter and a Giant MagnetoResistance (GMR) current sensor. Simulations have been done using a quasi-static electrical Verilog-A model for the GMR current sensor. A reduced set of parameters has been extracted to characterize the GMR sensor's behavior. The application has been analyzed making use of different sensors, whose device parameters were previously extracted. Finally, the accuracy of the models has been tested by comparing with experimental transient measurements.
A Test Circuit for GaN HEMTs Dynamic Ron Characterization in Power Electronics Applications
2019
Wide bandgap devices such as GaN HEMTs are a promising technology in the field of Power Electronics. Due to the physical properties of the Gallium nitride and the device design, they can outperform their Silicon counterparts for the design of highly efficient power switching converters. However, its design should face certain effects that can diminish its performance. One of such effect is the degradation mechanism known as dynamic onresistance (dynamic RON,), being its mitigation one of the main objectives in the design of the device. In this paper, a circuit is proposed for assessing if this effect is present in GaN transistors in power electronics applications. The circuit allows testing…
Power losses comparison between Silicon Carbide and Silicon devices for an isolated DC-DC converter
2021
In recent years, new efficient power devices have been implemented. Silicon Carbide has replaced silicon as regards the production and the utilization of many devices, such as MOSFETs, diodes, IGBTs and many others. SiC devices are characterized by a low reverse recovery charge, high carrier saturation velocity, by which it is possible to work at high frequency, and high breakdown voltage. Thanks to the great thermal conductivity and the wide bandgap, these devices can operate at high temperature and reach high voltages and currents. What is important to stress is the fact that power losses in SiC devices are lower than the silicon ones. These are the reasons why these devices are utilized …
Assessing Radiation Hardness of SIC MOS Structures
2018
It is widely known that devices based on wide gap semiconductors show potential benefits in terms of saving mass, increasing power densities compared with standard Silicon ones [1]. The higher operating temperatures these components can withstand can also reduce the power budget currently used for cooling down power electronics. These factors are critical in space applications where, for example SiC devices are very promising. However, in this field reliability is a paramount requirement, and radiation conditions can compromise the usage of these new technologies.
Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs
2019
GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters, where high frequencies and voltages are also needed. Its wide band gap (WBG), large breakdown electric field, and thermal stability improve actual silicon performances. However, at the moment, GaN HEMT technology suffers from some reliability issues, one of the more relevant of which is the dynamic on-state resistance (R) regarding power switching converter applications. In this study, we focused on the drain-to-source on-resistance (R) characteristic…
Detection of Partial Discharges at Square Shaped Voltages
2018
Due to the wide use of electronic converters and the introduction of new powerful power electronics devices, the input waveforms most often used are becoming much different than the traditional power frequent sinusoidal one. In High Voltage (HV) apparatus particularly, this condition can increase the stress on the insulation systems that may lower the reliability of the whole power grid. This type of input voltage, often showing an increased voltage gradient, causes problems in the Partial Discharge (PD) measurement setup and acquisition systems, also due to the increased harmonic content. In this paper, the main aim is to discuss how to suitably approach the measurement technique of PDs at…