Search results for "Pumping"
showing 10 items of 198 documents
Luminescence of unfused 95%SiO2–5%GeO2 amorphous films with fluorine additive: No evidence for presence of GeODC(I) defects found
2013
Abstract Photoluminescence (PL) of unfused amorphous germanosilicate films with fluorine additive is studied in 2–8.5 eV spectral range. Experiments are based on films deposited on silica substrates by means of the surface-plasma chemical vapor deposition (SPCVD). Films of about 100 μm in thickness with “high F” (~ 4.2 wt.%) and “low F” (~ 0.5 wt.%) fluorine content have been fabricated for the experiments. KrF (248 nm), ArF (193 nm) and F2 (157 nm) excimer lasers are used to pump PL. It is found that absorption and luminescence associated with germanium oxygen deficient centers (GeODCs) in “high F” and “low F” films differ. In the “high F” unfused film absorption coefficient of the band at…
Four-wave mixing in a ring cavity
2014
We investigate a four-wave mixing process in an N interaction scheme in Rb vapor placed inside a low-finesse ring cavity. We observe strong amplification and generation of a probe signal, circulating in the cavity, in the presence of two strong optical pump fields. We study the variations in probe field gain and dispersion as functions of experimental parameters with an eye on potential application of such a system for enhanced rotation measurements. A density-matrix calculation is performed to model the system, and the theoretical results are compared to those of the experiment.
Flashlamp-pumped Ti:Sapphire laser with different rods grown by Czochralski and Verneuil methods
1992
The design and the development of a flashlamp-pumped Ti:Sapphire laser is described. Design criteria are discussed and performance improvements using different types of fluorescent UV converters or filters, such as organic dyes or doped glass are presented. We have tested different laser rods at various Ti-concentrations obtained by Verneuil or Czochralski growth techniques. The maximum laser output energy of 540 mJ with a differential efficiency up to 1% was achieved by using only a pyrex filter surrounding the laser rod.
Flashlamp-pumped Ti:Sapphire laser: Influence of the rod figure of merit and Ti3+ concentration
1994
A flashlamp-pumped Ti:Sapphire laser is tested with rods of various Figures of Merit (FOM from 100 to 800) and Ti3+ concentrations (0.1 and 0.15% by weight) and we measured the laser energy dependence as a function of these parameters. Output energies above 2 J are obtained without dye converter, leading to a 1.8% overall efficiency and a 2.2% slope efficiency. The effects of pump pulse duration by variation of the discharge capacitance are also monitored.
Continuously tunable diamond Raman laser for resonance laser ionization.
2019
We demonstrate a highly efficient, tunable, ∼5 GHz line- width diamond Raman laser operating at 479 nm. The diamond laser was pumped by a wavelength-tunable intra- cavity frequency-doubled titanium sapphire (Ti:Sapphire) laser operating at around 450 nm, at a repetition rate of 10 kHz with a pulse duration of 50 ns. The Raman reso- nator produced a continuously tunable output with high stability, high conversion efficiency (28%), and beam quality (M$^{2}$ <1.2). We also demonstrate that the linewidth and tunability of the pump laser is directly transferred to the Stokes output. Our results show that diamond Raman lasers offer great potential for spectroscopic applications, such as resonance…
Profiling of traps in SiO2/Al2O3 gate stack by the charge pumping technique
2006
In this paper, we present our results on the distribution and generation of traps in a SiO 2 /A1 2 O 3 transistor. The investigation has been carried out by using charge pumping measurements, both variable voltage and frequency techniques, and constant voltage stress. By increasing the amplitude of the gate pulse we observe an increase of the charge recombined per cycle closely related to the contribution of shallow traps near the SiO 2 /Al 2 O 3 interface. By reducing the pulse frequency we measure an increase in the charge pumping current due to traps located deeper in the Al 2 O 3 . By combining charge pumping and constant voltage stress measurements, we found that the traps are mostly g…
Characteristics of laser operation at 1064 nm in Nd:YVO_4 under diode pumping at 808 and 914 nm
2011
International audience; A comparative study between 808 and 914nm pumping of Nd:YVO4 crystals for laser operation at 1064nm has been carried out. Using similar setups, performances of both configurations were first studied in the continuous wave, small-signal gain, and Q-switched regimes. Thanks to a numerical model, it is shown that fluorescence quenching and upconversion processes limit the possible uses for the 914nm pumping scheme to regimes with low population inversions
High-Spatial-Resolution Monitoring of Strong Magnetic Field using Rb vapor Nanometric-Thin Cell
2011
We have implemented the so-called $\lambda$-Zeeman technique (LZT) to investigate individual hyperfine transitions between Zeeman sublevels of the Rb atoms in a strong external magnetic field $B$ in the range of $2500 - 5000$ G (recently it was established that LZT is very convenient for the range of $10 - 2500$ G). Atoms are confined in a nanometric thin cell (NTC) with the thickness $L = \lambda$, where $\lambda$ is the resonant wavelength 794 nm for Rb $D_1$ line. Narrow velocity selective optical pumping (VSOP) resonances in the transmission spectrum of the NTC are split into several components in a magnetic field with the frequency positions and transition probabilities depending on th…
Electromagnetically Induced Transparency and optical pumping processes formed in Cs sub-micron thin cell
2012
Abstract The Electromagnetically Induced Transparency (EIT) effect in a Λ -system formed by Cs atoms (6 S 1/2 − 6 P 3/2 − 6 S 1/2 ) confined in an extremely thin cell (ETC) (atomic column thickness L varies in the range of 800 nm –3 µm is studied both experimentally and theoretically. It is demonstrated that when the coupling laser frequency is in exact resonance with the corresponding atomic transition, the EIT resonance parameters weakly depend on L , which allows us to detect the effect at L = λ = 852 nm. EIT process reveals a striking peculiarity in case of the coupling laser detuned by Δ from the atomic transition, namely the width of the EIT resonance rapidly increases upon an in…
Design and operation of CMOS-compatible electron pumps fabricated with optical lithography
2017
We report CMOS-compatible quantized current sources (electron pumps) fabricated with nanowires (NWs) on 300mm SOI wafers. Unlike other Al, GaAs or Si based metallic or semiconductor pumps, the fabrication does not rely on electron-beam lithography. The structure consists of two gates in series on the nanowire and the only difference with the SOI nanowire process lies in long (40nm) nitride spacers. As a result a single, silicide island gets isolated between the gates and transport is dominated by Coulomb blockade at cryogenic temperatures thanks to the small size and therefore capacitance of this island. Operation and performances comparable to devices fabricated using e-beam lithography is…