6533b827fe1ef96bd128661e
RESEARCH PRODUCT
Profiling of traps in SiO2/Al2O3 gate stack by the charge pumping technique
Robin DegraeveJan Van HoudtBogdan GovoreanuDavid P. BruncoIsodiana CrupiPhilippe Rousselsubject
Materials sciencePhysics::OpticsSettore ING-INF/01 - Elettronicalaw.inventionStress (mechanics)Condensed Matter::Materials ScienceCharge pumpinglawhigh-k materials; charge pumping; traps distribution; traps generationGeneral Materials ScienceTraps generationElectrical and Electronic Engineeringbusiness.industryMechanical EngineeringTransistorCharge (physics)Traps distributionCondensed Matter PhysicsComputer Science::OtherPulse (physics)Electronic Optical and Magnetic MaterialsCharge pumpingAmplitudeMechanics of MaterialsOptoelectronicsHigh-k materialCurrent (fluid)businessVoltagedescription
In this paper, we present our results on the distribution and generation of traps in a SiO 2 /A1 2 O 3 transistor. The investigation has been carried out by using charge pumping measurements, both variable voltage and frequency techniques, and constant voltage stress. By increasing the amplitude of the gate pulse we observe an increase of the charge recombined per cycle closely related to the contribution of shallow traps near the SiO 2 /Al 2 O 3 interface. By reducing the pulse frequency we measure an increase in the charge pumping current due to traps located deeper in the Al 2 O 3 . By combining charge pumping and constant voltage stress measurements, we found that the traps are mostly generated near the Si/SiO 2 interface.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2006-12-01 |