0000000000276361

AUTHOR

Robin Degraeve

showing 4 related works from this author

Distribution and generation of traps in SiO2/Al2O3 gate stacks

2007

In this work we combine charge-pumping measurements with positive constant voltage stress to investigate trap generation in SiO2/ Al2O3 n-MOSFET. Trap density has been scanned either in energy or in position based on charge-pumping (CP) measurements performed under different operating conditions in terms of amplitude and frequency of the gate pulse. Our results have revealed that the traps are meanly localized shallow in energy level, deeper in spatial position and they are mostly generated near the Si/SiO2 interface. (C) 2007 Elsevier Ltd. All rights reserved.

interface trapsWork (thermodynamics)Materials sciencecharge pumping (CP)Settore ING-INF/01 - ElettronicaTrap (computing)Stress (mechanics)Position (vector)Electrical and Electronic EngineeringSafety Risk Reliability and QualityBulk trapsbusiness.industryElectrical engineeringCondensed Matter PhysicsAtomic and Molecular Physics and OpticsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsPulse (physics)AmplitudeDistribution (mathematics)Control and Systems Engineeringenergy distributionAtomic physicsbusinesshigh-k dielectricsEnergy (signal processing)
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Origin of the substrate current after soft-breakdown in thin oxide n-MOSFETs

1999

In this paper is presented an experimental investigation on the origin of the substrate current after soft-breakdown in n-MOSFETs with 4.5 nm-thick oxide. At lower voltages this current shows a plateau that can be explained with the generation of hole-electron pairs in the space charge region and at the Si-SiO2 interface, and to carrier diffusion between the channel and the substrate. At higher voltages the substrate current steeply increases with voltage, due to trap-assisted tunneling from the substrate valence band to the gate conduction band, which becomes possible for gate voltages higher than the threshold voltage. Measurements on several devices at dark and in the presence of light, …

Materials sciencebusiness.industryAnalytical chemistryTime-dependent gate oxide breakdownSubstrate (electronics)Condensed Matter::Mesoscopic Systems and Quantum Hall EffectSpace chargeSettore ING-INF/01 - ElettronicaThreshold voltageEngineering (all)Depletion regionMOSFETOptoelectronicsElectric currentbusinessVoltage
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Profiling of traps in SiO2/Al2O3 gate stack by the charge pumping technique

2006

In this paper, we present our results on the distribution and generation of traps in a SiO 2 /A1 2 O 3 transistor. The investigation has been carried out by using charge pumping measurements, both variable voltage and frequency techniques, and constant voltage stress. By increasing the amplitude of the gate pulse we observe an increase of the charge recombined per cycle closely related to the contribution of shallow traps near the SiO 2 /Al 2 O 3 interface. By reducing the pulse frequency we measure an increase in the charge pumping current due to traps located deeper in the Al 2 O 3 . By combining charge pumping and constant voltage stress measurements, we found that the traps are mostly g…

Materials sciencePhysics::OpticsSettore ING-INF/01 - Elettronicalaw.inventionStress (mechanics)Condensed Matter::Materials ScienceCharge pumpinglawhigh-k materials; charge pumping; traps distribution; traps generationGeneral Materials ScienceTraps generationElectrical and Electronic Engineeringbusiness.industryMechanical EngineeringTransistorCharge (physics)Traps distributionCondensed Matter PhysicsComputer Science::OtherPulse (physics)Electronic Optical and Magnetic MaterialsCharge pumpingAmplitudeMechanics of MaterialsOptoelectronicsHigh-k materialCurrent (fluid)businessVoltage
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Characterization of soft breakdown in thin oxide NMOSFETs based on the analysis of the substrate current

2001

We have investigated the properties of soft breakdown (SBO) in thin oxide (4.5 nm) nMOSFETs with measurements of the gate and substrate leakage currents using the carrier separation technique. We have observed that, at lower gate voltages, the level of the substrate current exhibits a plateau. We propose that the observed plateau is due to the Shockley-Hall-Read (SHR) generation of hole-electron pairs in the space charge region and at the Si-SiO/sub 2/ interface. At higher voltages, the substrate current steeply increases with voltage, due to a tunneling mechanism, trap-assisted or due to a localized effective thinning of the oxide, from the substrate valence band to the gate conduction ban…

Materials sciencePhysics and Astronomy (miscellaneous)business.industryElectrical engineeringOxideTime-dependent gate oxide breakdownReliabilitySettore ING-INF/01 - ElettronicaElectronic Optical and Magnetic MaterialsThreshold voltagechemistry.chemical_compoundMOSFETDepletion regionchemistryLeakage currentMOSFETOptoelectronicsDielectric breakdownElectrical and Electronic EngineeringbusinessQuantum tunnellingLeakage (electronics)Voltage
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