Search results for "Quantum Dot"
showing 10 items of 418 documents
Quantum Dots Luminescence Collection Enhancement and Nanoscopy by Dielectric Microspheres
2019
In recent years, dielectric microspheres have been used in conjunction with optical microscopes to beat the diffraction limit and to obtain superresolution imaging. The use of microspheres on quantum dots (QDs) is investigated, for the first time, to enhance the light coupling efficiency. The enhancement of the QD luminescence collection in terms of extraction and directionality is demonstrated, as well as the enhancement of spatial resolution. In particular, it is found that a dielectric microsphere, placed on top of an epitaxial QD, increases the collected radiant energy by about a factor of 42, when a low numerical aperture objective is used. Moreover, if two or more QDs are present belo…
Transient photoresponse and incident power dependence of high-efficiency germanium quantum dot photodetectors
2012
We report a systematic study of time-resolved and power-dependent photoresponse in high-efficiency germanium quantum dot photodetectors (Ge-QD PDs), with internal quantum efficiencies greater than 100 over a broad wavelength, reverse bias, and incident power range. Turn-on and turn-off response times (τ on and τ off) are shown to depend on series resistance, bias, optical power, and thickness (W QD) of the Ge-QD layer, with measured τ off values down to ∼40 ns. Two different photoconduction regimes are observed at low and high reverse bias, with a transition around -3 V. A transient current overshoot phenomenon is also observed, which depends on bias and illumination power. © 2012 American …
Nanocrystal MOS memories obtained by LPCVD deposition of Si nanograins
2001
We have realized silicon quantum dots embedded in SiO2 which act as nano-floating gates of MOS memories. The dots with nanometer sizes have been deposited by LPCVD on a 3nm tunnel oxide. Two processes at a fixed pressure have been explored by varying the temperature. SiH4 with a N2 carrier gas have been used in the former case, SiH4 and H2 have been used in the latter. In both cases a nanocrystalline silicon layer is obtained, with nanocrystals a density higher than 1011 cm-2. The process with H2 carrier gas is more controllable and leads to the formation of nanocrystals with a more regular shape. In both cases the density of grains is able to originate detectable threshold shifts in the me…
Surface plasmon effects on carbon nanotube field effect transistors
2011
Herein, we experimentally demonstrate surface plasmon polariton (SPP) induced changes in the conductivity of a carbon nanotube field effect transistor (CNT FET). SPP excitation is done via Kretschmann configuration while the measured CNT FET is situated on the opposite side of the metal layer away from the laser, but within reach of the launched SPPs. We observe a shift of 0.4 V in effective gate voltage. SPP-intermediated desorption of physisorbed oxygen from the device is discussed as a likely explanation of the observed effect. This effect is visible even at low SPP intensities and within a near-infrared range. peerReviewed
Colloidal Quantum Dot Integrated Light Sources for Plasmon Mediated Photonic Waveguide Excitation
2016
We operate micron-sized CdSe/CdS core–shell quantum dot (QD) clusters deposited onto gold patches as integrated light sources for the excitation of photonic waveguides. The surface plasmon mode launched by the QD fluorescence at the top interface of the gold patches are efficiently coupled to photonic modes sustained by titanium dioxide ridge waveguides. We show that, despite a large effective index difference, the plasmonic and the photonic modes can couple with a very high efficiency provided the vertical offset between the two kinds of waveguides is carefully controlled. Based on the effective index contrast of the plasmonic and the photonic modes, we engineer in-plane integrated hybrid …
Photodynamics at the CdSe Quantum Dot–Perylene Diimide Interface: Unraveling the Excitation Energy and Electron Transfer Pathways
2021
Excitation energy and charge transfer processes in perylene diimide dye–CdSe quantum dot complexes have been studied by femtosecond transient absorption spectroscopy. After excitation of the quantu...
Carrier confinement in Ge/Si quantum dots grown with an intermediate ultrathin oxide layer
2012
We present computational results for strain effects on charge carrier confinement in Ge${}_{x}$Si${}_{1\ensuremath{-}x}$ quantum dots (QDs) grown on an oxidized Si surface. The strain and free carrier probability density distributions are obtained using the continuum elasticity theory and the effective-mass approximation implemented by a finite-element modeling scheme. Using realistic parameters and conditions for hemisphere and pyramid QDs, it is pointed out that an uncapped hemisphere dot deposited on the Si surface with an intermediate ultrathin oxide layer offers advantageous electron-hole separation distances with respect to a square-based pyramid grown directly on Si. The enhanced sep…
Growth kinetics of colloidal Ge nanocrystals for light harvesters
2016
Colloidal Ge nanocrystals (NCs) are gaining increased interest because of their potential application in low-cost optoelectronic and light harvesting devices. However, reliable control of colloidal NC synthesis is often an issue and a deeper understanding of the key-role parameters governing NC growth is highly required. Here we report an extended investigation on the growth of colloidal Ge NCs synthesized from a one-pot solution based approach. A systematic study of the effects of synthesis time, temperature and precursor concentration is elucidated in detail. X-ray diffraction (XRD) analysis reveals the presence of crystalline Ge NCs with a mean size (from 5 to 35 nm) decreasing with the …
Laser-Fabricated Fluorescent, Ligand-Free Silicon Nanoparticles: Scale-up, Biosafety, and 3D Live Imaging of Zebrafish under Development
2022
This work rationalizes the scalable synthesis of ultrasmall, ligand-free silicon nanomaterials via liquid-phase pulsed laser ablation process using picosecond pulses at ultraviolet wavelengths. Results showed that the irradiation time drives hydrodynamic NP size. Isolated, monodisperse Si-NPs are obtained at high yield (72%) using post-treatment process. The obtained Si-NPs have an average size of 10 nm (not aggregated) and display photoemission in the green spectral range. We directly characterized the ligand-free Si-NPs in a vertebrate animal (zebrafish) and assessed their toxicity during the development. In vivo assay revealed that Si-NPs are found inside in all the early life stages of …