6533b822fe1ef96bd127d942

RESEARCH PRODUCT

Surface plasmon effects on carbon nanotube field effect transistors

J. Jussi ToppariHenrik KunttuTommi IsoniemiTommi K. HakalaPäivi TörmäAndreas JohanssonMarcus Rinkiö

subject

Materials sciencePhysics and Astronomy (miscellaneous)transistoriNanotechnologyCarbon nanotubehiilinanoputkiplasmonicslaw.inventionlawfield effect transistorspolaritonitPlasmonta114carbon nanotubesbusiness.industryhiilinanoputketSurface plasmonNanofysiikkananoscienceSurface plasmon polaritonCarbon nanotube field-effect transistorpintaplasmonitCarbon nanotube quantum dotplasmoniOptoelectronicsField-effect transistorbusinessnanotube devicesLocalized surface plasmon

description

Herein, we experimentally demonstrate surface plasmon polariton (SPP) induced changes in the conductivity of a carbon nanotube field effect transistor (CNT FET). SPP excitation is done via Kretschmann configuration while the measured CNT FET is situated on the opposite side of the metal layer away from the laser, but within reach of the launched SPPs. We observe a shift of 0.4 V in effective gate voltage. SPP-intermediated desorption of physisorbed oxygen from the device is discussed as a likely explanation of the observed effect. This effect is visible even at low SPP intensities and within a near-infrared range. peerReviewed

yearjournalcountryeditionlanguage
2011-07-18
10.1063/1.3614543https://aaltodoc.aalto.fi/handle/123456789/21855