Search results for "Quantum dot laser"
showing 10 items of 20 documents
Optical characterization of individual GaAs quantum dots grown with height control technique
2013
We show that the epitaxial growth of height-controlled GaAs quantum dots, leading to the reduction of the inhomogeneous emission bandwidth, produces individual nanostructures of peculiar morphology. Besides the height controlled quantum dots, we observe nanodisks formation. Exploiting time resolved and spatially resolved photoluminescence we establish the decoupling between quantum dots and nanodisks and demonstrate the high optical properties of the individual quantum dots, despite the processing steps needed for height control. © 2013 AIP Publishing LLC.
Charge control in laterally coupled double quantum dots
2011
4 figuras, 4 páginas.-- PACS number(s): 78.67.Hc, 73.21.La, 78.55.Cr
Magnetism in one-dimensional quantum dot arrays
2005
We employ the density functional Kohn-Sham method in the local spin-density approximation to study the electronic structure and magnetism of quasi one-dimensional periodic arrays of few-electron quantum dots. At small values of the lattice constant, the single dots overlap, forming a non-magnetic quantum wire with nearly homogenous density. As the confinement perpendicular to the wire is increased, i.e. as the wire is squeezed to become more one-dimensional, it undergoes a spin-Peierls transition. Magnetism sets in as the quantum dots are placed further apart. It is determined by the electronic shell filling of the individual quantum dots. At larger values of the lattice constant, the band …
Emission properties of single InAs/GaAs quantum dot pairs and molecules grown in GaAs nanoholes
2010
Trabajo presentado a la "11th International Conference on Optics of Excitons in Confined Systems" (OECS), celebrada en en Madrid (España) del 7 al 11 de Septiembre de 2009.
Differences between photoluminescence spectra of type-I and type-II quantum dots
2008
Semiconductor quantum dots which trap simultaneously electrons and holes are called quantum dots of type-I. Contrary to these structures, empty dots of type-II attract only one type of charged carriers and repel the other. Particularities of confining potential are unaccessible by any direct measurements, thus recognition of quantum dot type by indirect method is highly desired. Our proposal is to distinguish between the two types of quantum dots via a comparison of photoluminescence spectra of these structures, which differ in both cases qualitatively.
Gain Dynamics after Ultrashort Pulse Trains in Quantum Dot based Semiconductor Optical Amplifiers
2007
We study the gain dynamics in QD-based SOAs after excitation with fs-pulse trains of up to THz repetition rates. A complete ground-state gain recovery is found for 200 GHz repetition rates and injection currents around 90 mA.
Unavoidable decoherence in semiconductor quantum dots
2005
Phonon-induced unavoidable decoherence of orbital degrees of freedom in quantum dots is studied and the relevant time scales are estimated. Dephasing of excitons due to acoustic phonons and, in a polar medium, to optical phonons, including anharmonic effects and enhancement of the effective Fr\"ohlich constant due to localization, is assessed for typical self-assembled quantum dots. Temporal inefficiency of Pauli blocking due to lattice inertia is predicted. For quantum dots placed in a diluted magnetic semiconductor medium a magnon-induced dephasing of a spin is also estimated in accordance with experimental results.
Single scatterings in single artificial atoms: Quantum coherence and entanglement
2003
We employ the quantum-jump approach to study single scatterings in single semiconductor quantum dots. Two prototypical situations are investigated. First, we analyze two-photon emissions from the cascade biexciton decay of a dot where the single-exciton states exhibit a fine-structure splitting. We show that this splitting results for appropriately chosen polarization filters in an oscillatory behavior of two-photon correlations, and carefully examine the proper theoretical description of the underlying scattering processes. Secondly, we analyze the decay of a single-electron charged exciton in a quantum dot embedded in a field effect structure. We show how the quantum properties of the cha…
Far-infrared laser on quantum dots created by electric-field focusing
2003
The new proposal of a far-infrared laser employing intraband transitions in the system of quantum dots is briefly described. The conditions for inversion of population for electrons in the quantum dot matrix created by an electric-field focusing in narrow GaAs/AlGaAs quantum well are discussed. The laser is planned to be pumped by periodically repeated rapid creation and destruction of the quantum dot matrix allowing for repeated filling of the dot levels with electrons from a quantum well. Some major results of the analysis of the kinetics of the electron-photon system are presented.
Quantum wells within quantum dots, a CdS/HgS nanoheterostructure with global and local confinement
1998
Semiconductor nanocrystals prepared by methods of wet chemistry are similar to MBE grown quantum dots where the mobility of the charge carriers is reduced to zero dimensionality. In this paper we summarize the physics of a unique system in which the charge carriers are locally confined within a heterogeneous quantum dot. With high resolution electron microscopy we will show that epitaxial growth ot atomic layer precision is possible by methods of solution chemistry leading to CdS quantum dots with embedded HgS quantum wells (QDQWs). The photophysics of this system is investigated by time-correlated single photon counting, transient differential absorption and fluorescence line narrowing spe…