Search results for "RADIATION"

Thermally Stimulated Ionic and Electronic Processes and Radiation-Induced Defect Annealing in LiBaF3 Crystals

2000

The electronic, ionic and ion-diffusion controlled thermally stimulated relaxation (TSR) processes in X-ray irradiated (at 80 K or 290 K) nominally pure LiBaF3 fluoroperovskite crystals have been investigated in the 90–550 K range by means of the ionic conductivity, ionic thermally stimulated depolarization current (TSDC), as well as the thermally stimulated current (TSC), thermally stimulated luminescence (TSL) and the X-ray induced optical absorption spectra thermal bleaching techniques. The role of the thermoactivated ionic and ionic-electronic processes in the TSR (thermal bleaching, TSC and TSL) of X-ray irradiated crystals is studied above 250 K. The TSL efficiency (ratio TSL/TSC) ver…

Investigation of the Absorption of Annihilation Quanta in Solid and Liquid Ga and BiSn Alloy

2001

Rheological characterization and release properties of inulin-based hydrogels

2012

Abstract In the present study the rheological properties of hydrogels obtained through UV irradiation of an aqueous solution of methacrylated inulin (INUMA) alone or in the presence of four different crosslinkers, have been recorded as a function of irradiation time, at two different wavelengths (320 and 365 nm) and fixed frequency and amplitude by oscillatory experiments. Each hydrogel has been analyzed by measurements of the frequency-dependency of the elastic modulus, G ′, in the linear viscoelastic region. The amount of polymeric chains giving an elastic response has been correlated to the chemical nature of the crosslinker used together with INUMA. Finally the release properties of the…

Ru-Based Thin Film Temperature Sensor for Space Environments: Microfabrication and Characterization under Total Ionizing Dose

2016

The paper shows the microfabrication processes of a Ruthenium-based resistance temperature detector and its behavior in response to irradiation at ambient temperature. The radiation test was done in a public hospital facility and followed the procedures based on the ESA specification ESCC 22900. The instrumentation system used for the test is detailed in the work describing the sensors resistance evolution before, during, and after the exposure. A total irradiation dose of 43 krad with 36 krad/h dose rate was applied and a subsequent characterization was performed once the Ru sensors were submitted to an 80°C annealing process during a period of 168 h. The experimental measurements have sho…

Atomic Force Microscopy Study of Yeast Cells Influenced by High Voltage Electrical Discharge

2008

Human cells are the eukaryotic ones. Simulation of wide-spectrum electromagnetic radiation influence on eukaryotic cells was performed with yeast which is usually used now in molecular biological and medical biological investigations as the ideal model of eukaryotic system. The aim of the research was to observe possible induced alterations of the cell morphology. Atomic force microscopy (AFM) and electron scanning microscopy (ESM) have been applied to image the surface of cells exposed to electromagnetic radiation.

Surface pattern recording in Sb2Se3 thin films

2013

Abstract Results on the modification of Sb 2 Se 3 thin film surface topology by irradiation followed by wet-etching are given. Comparison of study results revealed the possible role of purely electronic and thermal processes in the relief formation. The latter is supposed to be connected with radiation-induced defect creation, free volume increase under the increased fluidity conditions as well as with the possible additional influence of electrostatic forces and stress. Changes in surface characteristics are presented and potential applications of this treatment are discussed.

Efficient Wide-Bandgap Mixed-Cation and Mixed-Halide Perovskite Solar Cells by Vacuum Deposition

2021

Vacuum deposition methods are increasingly applied to the preparation of perovskite films and devices, in view of the possibility to prepare multilayer structures at low temperature. Vacuum-deposited, wide-bandgap solar cells based on mixed-cation and mixed-anion perovskites have been scarcely reported, due to the challenges associated with the multiple-source processing of perovskite thin films. In this work, we describe a four-source vacuum deposition process to prepare wide-bandgap perovskites of the type FA1-n Cs n Pb(I1-x Br x )3 with a tunable bandgap and controlled morphology, using FAI, CsI, PbI2, and PbBr2 as the precursors. The simultaneous sublimation of PbI2 and PbBr2 allows the…

Tuning the Direct and Indirect Excitonic Transitions of h-BN by Hydrostatic Pressure

2021

The pressure dependence of the direct and indirect bandgap transitions of hexagonal boron nitride is investigated using optical reflectance under hydrostatic pressure in an anvil cell with sapphire windows up to 2.5 GPa. Features in the reflectance spectra associated with the absorption at the direct and indirect bandgap transitions are found to downshift with increasing pressure, with pressure coefficients of −26 ± 2 and −36 ± 2 meV GPa–1, respectively. The GW calculations yield a faster decrease of the direct bandgap with pressure compared to the indirect bandgap. Including the strong excitonic effects through the Bethe–Salpeter equation, the direct excitonic transition is found to have a…

Untersuchungen zur Photoleitf�higkeit von alkoxysubstituierten Oligo- und Poly(1,4-phenylenethenylen)en

1994

Investigations on the Photoconductivity of Alkoxy Substituted Oligo- and Poly(1,4-phenyleneethenylene)s The photoreactivity and the photoconductivity of the mono- and dialkoxy substituted oligo- and poly(1,4-phenyleneethenylene)s 1/1′a-n were investigated in order to optimize the photoconducting properties of these materials. Increasing the length of the side chains enhances the average length of the main chain during the polycondensation and decreases the band gap till the limit of convergence is reached. The highest photoconductivity was observed for the 2,5-dipropyloxy system 1/1′j. Longer side chains render the charge transfer from chain to chain more difficult. The measurements were pe…

Study of the bandgap renormalization in Ga-doped ZnO films by means of optical absorption under high pressure and photoelectron spectroscopy

2008

Abstract In this paper we investigate the band gap renormalization in heavily Ga-doped ZnO thin films deposited by pulsed laser deposition on C -plane sapphire and mica substrates. Thin films were studied by ultraviolet photoelectron spectroscopy and also by optical measurements under high pressure. The Fermi-level shift, as obtained from ultraviolet photoelectron experiments, exhibits a relatively small and positive shift (about 0.3 eV) with respect to the valence band for increasing electron concentrations up to 1021 cm−3. The optical gap exhibits a much larger increase (0.6 eV) for the same concentration range. Absorption measurements under pressure show that the pressure coefficient of …