Search results for "RADIATION"
showing 10 items of 5298 documents
Exomorphism of jacobsite precipitates in bixbyite single crystals from the Thomas Range in Utah
2021
Abstract Naturally occurring single crystals of bixbyite, (Fe,Mn)2O3, from the Thomas Mountain Range in Utah, U.S.A., were studied via (scanning) transmission electron microscopy (S)TEM. With up to 5 cm edge length, these mineral specimens are the largest bixbyite crystals found worldwide. Their hexahedral shapes are often modified by {211} facets at the corners and small {211} truncations along their cube edges. Characteristic lamellar defects, running parallel to the {100} planes, can be observed via TEM imaging. The defects are, according to EDS analyses, attributed to the tetragonal manganese silicate braunite, Mn7[SiO12]. In the present study, electron nano-diffraction and atomic resol…
Spontaneous order in ensembles of rotating magnetic droplets
2019
Ensembles of elongated magnetic droplets in a rotating field are studied experimentally. In a given range of field strength and frequency the droplets form rotating structures with a triangular order - rotating crystals. A model is developed to describe ensembles of several droplets, taking into account the hydrodynamic interactions between the rotating droplets in the presence of a solid wall below the rotating ensemble. A good agreement with the experimentally observed periodic dynamics for an ensemble of four droplets is obtained. During the rotation, the tips of the elongated magnetic droplets approach close to one another. An expression is derived that gives the magnetic interaction be…
A graphene-based neutral particle detector
2019
A neutral particle detector is presented, in which the traditionally used target material, indium tin oxide (ITO), is replaced by graphene. The graphene-based detector enables collinear photodetachment measurements at a significantly shorter wavelength of light down to 230 nm compared to ITO-based detectors, which are limited at 335 nm. Moreover, the background signal from the photoelectric effect is drastically reduced when using graphene. The graphene based detector, reaching 1.7 eV further into the UV energy range, allows increased possibilities for photodetachment studies of negatively charged atoms, molecules, and clusters.A neutral particle detector is presented, in which the traditio…
Negative differential resistance and threshold-switching in conical nanopores with KF solutions
2021
Negative differential resistance (NDR) phenomena are under-explored in nanostructures operating in the liquid state. We characterize experimentally the NDR and threshold switching phenomena observed when conical nanopores are immersed in two identical KF solutions at low concentration. Sharp current drops in the nA range are obtained for applied voltages exceeding thresholds close to 1 V and a wide frequency window, which suggests that the threshold switching can be used to amplify small electrical perturbations because a small change in voltage typically results in a large change in current. While we have not given a detailed physical mechanism here, a phenomenological model is also includ…
The role of disorder on Er3+ luminescence in Na1/2Bi1/2TiO3
2018
Abstract Photoluminescence in Er-doped NBT is studied at different temperatures. Remarkable reduction of the luminescence intensity in the green spectral range is found in the poled state comparing with the depoled state. Luminescence spectra at low temperatures reveal continuous wavelength shift of some maxima belonging to the 4 S 3/2 → 4 I 15/2 transition depending on the excitation wavelength, which is explained by large variety of different environments around Er 3+ related to the random distribution of Na + and Bi 3+ in A-sublattice of the ABO 3 perovskite structure. Poling extends the wavelength range where shift of luminescence maxima is observed in the direction of longer excitati…
Silicon dosimeters based on Floating Gate Sensor: design, implementation and characterization
2020
A rad-hard monolithic dosimeter has been implemented and characterized in a standard 180 nm CMOS technology. The radiation sensor (C-sensor) is based on a Floating Gate (FG) MOS discharge principle. The output current is processed by a current-to-voltage (I/V) interface and then converted by a 5-bit flash ADC. The dosimeter is re-usable (FG can be recharged) and can detect a dose up to 1krad (Si) with a resolution of 30rad (Si) typical over temperature 0 to 85°C range. The ADC allows easy further signal processing for calibration and averaging, etc. The power consumption of C-sensor plus I/V interface is < 2mW from a 5 V power supply. The overall layout area is less than 0.25mm2. The Rad…
Development of hard x-ray photoelectron SPLEED-based spectrometer applicable for probing of buried magnetic layer valence states
2016
Abstract A novel design of high-voltage compatible polarimeter for spin-resolved hard X-ray photoelectron spectroscopy (Spin-HAXPES) went into operation at beamline BL09XU of SPring-8 in Hyogo, Japan. The detector is based on the well-established principle of electron diffraction from a W(001) single-crystal at a scattering energy of 103.5 eV. It's special feature is that it can be operated at a high negative bias potential up to 10 kV, necessary to access the HAXPES range. The polarimeter is operated behind a large hemispherical analyzer (Scienta R-4000). It was optimized for high transmission of the transfer optics. A delay-line detector (20 mm dia.) is positioned at the exit plane of the…
Positron trapping defects in free-volume investigation of Ge–Ga–S–CsCl glasses
2016
Abstract Evolution of free-volume positron trapping defects caused by crystallization process in (80GeS 2 –20Ga 2 S 3 ) 100−х (СsCl) x , 0 ≤ x ≤ 15 chalcogenide-chalcohalide glasses was studied by positron annihilation lifetime technique. It is established that CsCl additives in Ge–Ga–S glassy matrix transform defect-related component spectra, indicating that the agglomeration of free-volume voids occurs in initial and crystallized (80GeS 2 –20Ga 2 S 3 ) 100−х (СsCl) x , 0 ≤ x ≤ 10 glasses. Void fragmentation in (80GeS 2 –20Ga 2 S 3 ) 85 (СsCl) 15 glass can be associated with loosing of their inner structure. Full crystallization in each of these glasses corresponds to the formation of defe…
High-pressure x-ray-absorption study of GaSe
2002
The III-VI layered semiconductor InSe has been studied by high-pressure single crystal x-ray absorption spectroscopy up to a maximum pressure of 14 GPa. The In-Se distance has been measured in both the low- pressure layered phase and the high-pressure NaCl phase. The bond compressibility in the layered phase is lower than the ``a'' crystallographic parameter compressibility, which implies an increase of the angle between the In-Se bond and the layer plane. Under plausible hypothesis, a description of the evolution of the whole structure with pressure is given. In particular, the intralayer distance is observed to increase with increasing pressure. A plausible precursor defect and a simple m…
The impact of temperature on electrical properties of polymer-based nanocomposites
2020
This work was supported by National Research Foundation of Ukraine, project 2020.02/0217. IK would also like to thank VIAA, State Education Development Agency for Latvian state fellowship. HK would like to thank Ministry of Education and Science of Ukraine, project for young researchers No. 0119U100435. In addition, SP and AAP are thankful for financial support from Latvian Council of Science via grant lzp-2018/2-0083. HK and AAP are grateful for the support from the COST Action CA17126.