Search results for "RAMAN"
showing 10 items of 1328 documents
A theoretical study of the lowest electronic states of azobenzene: the role of torsion coordinate in the cis-trans photoisomerization
2003
In the present paper we report the results of a multiconigurational computational study on potential- energy curves of azobenzene along the NN twisting to clarify the role of this coordinate in the decay of the S2(pp*) and S1(np*) states. We have found that there is a singlet state, S3 at the trans geometry, on the basis of the doubly excited coniguration n 2 p* 2 , that has a deep minimum at about 90 of twisting, where it is the lowest excited singlet state. The existence of this state provides an explanation for the short lifetime of S2(pp*) and for the wavelength-dependence of azobenzene photochem- istry. We have characterized the S1(np*) state by calcu- lating its vibrational frequencie…
Absorption and luminescence in amorphous silica synthesized by low-pressure plasmachemical technology
2007
A comparison study of as-deposited by the hydrogen-free SPCVD process silicon dioxide with and without fluorine as well as the one in the form of fused materials is performed to define whether glass forming processing affects its optical properties. Raman scattering, optical absorption in the vacuum ultraviolet region as well as luminescence at different temperatures and various excitation conditions are measured. A difference in Urbach rule parameters and intrinsic defect concentrations for different samples is revealed. No significant impact on the structure responsible for Raman scattering is observed.
Gallium doped SiO2: Towards a new luminescent material
2007
We show how the interaction between Ga atoms and silica samples in a hot environment gives rise to permanent inclusions of Ga inside the silica matrix which, in turn, produce typical luminescence features. The Ga doped silica is analyzed via laser induced fluorescence, photoluminescence and electron paramagnetic resonance spectroscopies. The results evidence the presence of modifications induced by the Ga inclusions inside the silica matrix and some preliminary hypothesis on their nature are advanced. Possible applications of such Ga doped silica are also mentioned.
Photoluminescence and Raman spectroscopy of MBE‐grown InN nanocolumns
2008
InN nanocolumns grown under different conditions by plasma-assisted molecular beam epitaxy on p-Si (111) substrates are studied by micro-Raman and photoluminescence (PL) spectroscopies. The nanocolumns are free of strain and have an improved crystal quality as shown by the frequency and linewidth of the nonpolar E2h mode. Uncoupled polar modes coexist with a couple LO phonon-plasmon mode and are sensitive to the nanocolumn morphology. Variations in the growth conditions also modify the PL spectra significantly. An increase in the PL energy also involves a reduction of the integrated intensity and an increase of the PL linewidth. This overall phenomenology highlights the role of the surface …
Luminescence and Raman Detection of Molecular Cl2 and ClClO Molecules in Amorphous SiO2 Matrix
2017
The support from the Latvian Research Program project IMIS 2 (L.S., K.S.) and Latvian Science Council Grant 302/2012 (A.S.) is acknowledged. K.K. was partially supported by the Collaborative Research Project of Materials and Structures Laboratory, Tokyo Institute of Technology. H.H. was supported by the MEXT Element Strategy Initiative to form research cores.
Diffusive equilibrium properties of O2 in amorphous SiO2 nanoparticles probed via dependence of concentration on size and pressure
2014
An experimental study on the diffusive equilibrium value of interstitial O2 in silica nanoparticles was carried out on samples with average particles diameter 40, 14, and 7 nm. The investigation was performed by measuring the concentration of interstitial O2 by Raman and photoluminescence techniques. The dependence of diffusive equilibrium concentration on pressure and temperature was investigated in the pressure range from 0.2 to 76 bar and in the temperature range from 98 to 244 °C. The equilibrium concentration of interstitial O2 follows Henry’s law at pressures below 13 bar whereas a departure from this model is observed at higher pressures. In particular, O2 concentration saturates abo…
Excitonic Transitions in Homoepitaxial GaN
2001
The photoluminescence spectrum of a high quality homoepitaxial GaN film has been measured as a function of temperature. As temperature increases the recombination of free excitons dominates the spectra. Their energy shift has successfully fitted in that temperature range by means of the Bose-Einstein expression instead of Varshni's relationship. Values for the parameters of both semi-empirical relations describing the energy shift are reported and compared with the literature.
Transient FTIR spectroscopy after one- and two-colour excitation on a highly luminescent chromium(III) complex.
2021
The development of photoactive transition metal complexes with Earth-abundant metals is a rapidly growing research field, where a deeper understanding of the underlying photophysical processes is of great importance. A multitude of potential applications in the fields of photosensitizing, optical sensing, photoluminescence and photoredox catalysis motivates demanding spectroscopic studies. We applied a series of high-level spectroscopic methods on the previously reported highly luminescent chromium(iii) complex [Cr(ddpd)2](BF4)3 (ddpd = N,N'-dimethyl-N,N'-dipyridine-2-ylpyridine-2,6-diamine) possessing two near-IR emissive doublet states with microsecond lifetimes. Luminescence measurements…
Enhanced UV emission from ZnO nanoflowers synthesized by the hydrothermal process
2012
ZnO nanoflowers were synthesized by the hydrothermal process at an optimized growth temperature of 200 °C and a growth/reaction time of 3 h. As-prepared ZnO nanoflowers were characterized by x-ray diffraction, scanning electron microscopy, UV–visible and Raman spectroscopy. X-ray diffraction and Raman studies reveal that the as-synthesized flower-like ZnO nanostructures are highly crystalline with a hexagonal wurtzite phase preferentially oriented along the plane. The average length (234–347 nm) and diameter (77–106 nm) of the nanorods constituting the flower-like structure are estimated using scanning electron microscopy studies. The band gap of ZnO nanoflowers is estimated as 3.23 eV, the…
Silicon Nanocrystals Produced by Nanosecond Laser Ablation in an Organic Liquid
2011
Small (3−5 nm in diameter following HRTEM images) Si nanocrystals were produced in a two-stage process including (1) nanosecond laser ablation of a Si target in an organic liquid (chloroform) that results in formation of big composite polycrystalline particles (about 20−100 nm average diameter) and (2) ultrasonic post-treatment of Si nanoparticles in the presence of HF. The post-treatment is responsible for disintegration of the composite Si particles, release of small individual nanocrystals, and reduction of their size due to HF-induced etching of Si oxide. The downshift and broadening of the ∼520 cm−1 Raman phonon band of the small Si nanocrystals with respect to the bulk Si Raman band i…