Search results for "RANS"
showing 10 items of 35530 documents
SIC based solid state protections switches for space applications
2017
Development and technology maturation of Silicon Carbide (SiC) power transistors over the last 15 years has motivated its study in aerospace systems. When compared with Si devices, superior voltage blocking capacity and the capability of operation at higher temperatures, give important advantages in space power electronics applications, similar to what happens in terrestrial electronics. This paper discusses the use of SiC power transistors for Solid State Power Switches especially addressed to the space segment. Two applications will be covered, the first is the Solid State Shunt Switch, widely used in high power Direct Energy Transfer (DET) photovoltaic power regulators and the second is …
Electrical transport in lead-free (Na0.5Bi0.5)1–xSrxTiO3 ceramics (x = 0, 0.01 and 0.02)
2017
Lead-free (Na0.5Bi0.5)1xSrxTiO3 (x = 0, 0.01 and 0.02) ceramics were manufactured through a solid-state mixed oxide method and their ac (σac) and dc (σdc) electric conductivity were studied. It is ...
Space charge accumulation in undersea HVDC cables as function of heat exchange conditions at the boundaries – water-air interface
2020
Transmission lines with undersea HVDC cables are an interesting technological solution for the supply of electrical energy to islands. The accumulation of space charge inside the dielectric layer of a HVDC cable is one of the most important element to consider in its design and during operation. The formation of space charge is due to various factors including the high dependence on the temperature of the electrical conductivity of the insulation and the establishment of a thermal gradient under load conditions. This research is focused on the space charge accumulation phenomenon around a section of a HVDC cable half dipped in water and half in air. Due to the high difference in thermal con…
Electromagnetic and Thermal Modelling for Calculating Ageing Rate of Distribution Transformers
2018
Prediction of the lifetime for transformers is very important for maintenance and asset management. Finite element analysis was performed on a 5 MVA distribution transformers with aluminium foil-type windings and voltage rating 6600 V/23000 V. Electromagnetic modelling is implemented on the full three-phase transformer to calculate distributed losses, taking the skin effect into account. To reduce the computational burden, the distributed losses in one phase are used to analyse temperature rise in one phase of the transformer. The temperature rise results were used to determine the ageing rate of the transformer. Further, the influence of ambient temperature and cooling on the temperature r…
The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2-N2 capacitive discharges
2017
Two distinguishable plasma modes in the O2–N2 radio frequency capacitively coupled plasma (CCP) used in remote plasma-enhanced atomic layer deposition (PEALD) were observed. Optical emission spectroscopy and spectra interpretation with rate coefficient analysis of the relevant processes were used to connect the detected modes to the α and γ modes of the CCP discharge. To investigate the effect of the plasma modes on the PEALD film growth, ZnO and TiO2 films were deposited using both modes and compared to the films deposited using direct plasma. The growth rate, thickness uniformity, elemental composition, and crystallinity of the films were found to correlate with the deposition mode. In re…
Tuning of interfacial perpendicular magnetic anisotropy and domain structures in magnetic thin film multilayers
2019
We investigate the magnetic domain structures and the perpendicular magnetic anisotropy (PMA) arising in CoFeB films interfaced with selected heavy metal (HM) layers with large spin Hall angles in HM/CoFeB/MgO (HM = W, Pt, Pd, W x Ta1−x ) stacks as a function of CoFeB thickness and composition for both as-deposited and annealed materials stacks. The coercivity and the anisotropy fields of annealed material stacks are higher than for the as-deposited stacks due to crystallisation of the ferromagnetic layer. Generally a critical thickness of MgO > 1 nm provides adequate oxide formation at the top interface as a requirement for the generation of PMA. We demonstrate that in stacks with Pt as th…
The effects of thermal treatment on structural, morphological and optical properties of electrochemically deposited Bi2S3 thin films
2017
Abstract Thin films of bismuth sulfide (Bi 2 S 3 ) have been electrochemically deposited on indium–doped tin oxide substrates from aqueous solutions of Bi(NO 3 ) 3 , ethylene diamine tetraacetic acid (EDTA) and Na 2 S 2 O 3 . The structural properties of the films were characterized using X–ray diffraction and high–resolution transmission electron microscopy analyses. The film crystallizes in an orthorhombic structure of Bi 2 S 3 along with metallic bismuth. Thermal annealing of the prepared film in sulfur atmosphere improves its crystallinity and cohesion. The band gap values of the deposited film before and after annealing at 400 °C were found to be 1.28 and 1.33 eV, respectively.
Flash annealing influence on structural and electrical properties of TiO2/TiO/Ti periodic multilayers
2014
Abstract Multilayered structures with a 40 nm period composed of titanium and two different titanium oxides, TiO and TiO 2 , were accurately produced by DC magnetron sputtering using the reactive gas pulsing process. These multilayers were sputtered onto Al 2 O 3 sapphire to avoid substrate compound diffusion during flash annealing (ranging from 350 °C to 550 °C). Structure and composition of these periodic TiO 2 /TiO/Ti stacks were investigated by X-ray diffraction, X-ray photoemission spectroscopy and transmission electronic microscopy techniques. Two crystalline phases α-Ti and fcc-TiO were identified in the metallic-rich sub-layers whereas the oxygen-rich ones were composed of a mixture…
Structural, optical, and luminescence properties of ZnO:Ga optical scintillation ceramic
2018
This paper discusses the characteristics of ZnO and ZnO:Ga ceramics fabricated by uniaxial hot pressing. The short-wavelength transmission limit of zinc oxide ceramics is in the 370-nm region; the long-wavelength limit is determined by the free-charge-carrier concentration and lies in the interval from 5 to 9 μm. The total transmittance of such ceramics in the visible and near-IR regions is about 70% when the sample is 0.5 mm thick. The luminescence spectrum is represented by a broad emission band with maximum at 580 nm, having a defect nature. The introduction of 0.03–0.1 mass % gallium into the zinc oxide structure inhibits grain growth and increases the free-charge-carrier concentration …
Multiple low-frequency broad band gaps generated by a phononic crystal of periodic circular cavity sandwich plates
2017
Abstract We propose a new type of phononic crystal (PnC) composed of a periodic alternation of circular cavity sandwich plates. In the low-frequency regime, the crystal can modulate the propagation of flexural waves. Governing equations are deduced basing on the classical theory of coupled extensional and flexural vibrations of plates. The dispersion relation of the infinite PnC is calculated by combining the transfer matrix method with Bloch theory. The dynamic response of the PnC with finite unit cells is further studied with finite element analysis. An experiment is carried out to demonstrate the performance of the PnC in vibration isolation. Numerical results and experimental results bo…