Search results for "Radiation effect"
showing 10 items of 111 documents
Durcissement de matériaux pour l’optique et la photonique destinés à l’utilisation dans un environnement énergétique
2008
Influence du rayonnement X sur des fibres et préformes canoniques dopées au phosphore
2009
Near‐IR Radiation‐Induced Attenuation of Aluminosilicate Optical Fibers
2021
The X-ray radiation-induced attenuation (RIA) growth kinetics are studied online in different single-mode aluminosilicate optical fibers in the near-IR (NIR) domain to evaluate their potential in terms of dosimetry. The optical fibers differ by Al contents, core sizes, drawing parameters, and also by a preform deposition process. The data show no dependence of the RIA on all these parameters, a positive result for the design of point or distributed radiation detectors exploiting RIA to monitor the dose. The RIA growth rate is unchanged for dose rates changing from 0.073 to 6.25 Gy(SiO2) s−1, and the RIA linearly increases with the dose up to 2 kGy(SiO2). Small but noticeable RIA changes are…
Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence
2017
Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved. peerReviewed
Proton Direct Ionization in Sub-Micron Technologies : Test Methodologies and Modelling
2023
Two different low energy proton (LEP) test methods, one with quasi-monoenergetic and the other with very wide proton beam energy spectra, have been studied. The two test methodologies have been applied to devices that were suggested from prior heavy-ion tests to be sensitive to proton direct ionization (PDI). The advantages and disadvantages of the two test methods are discussed. The test method using quasi-monoenergetic beams requires device preparation and high energy resolution beams, but delivers results that can be interpreted directly and can be used in various soft error rate (SER) calculation methods. The other method, using a heavily degraded high energy proton beam, requires littl…
Thermal bleaching of gamma-induced-defects in optical fibers
2012
International audience; Ge-doped and F-doped gamma-irradiated fibers with a maximum accumulated dose of 10 MGy were subjected to isochronal annealing treatments up to 750°C. The thermal treatment influence on the point defect generation and transformation were investigated through Radiation Induced Attenuation (RIA) changes in the visible and IR spectral domains. The thermal bleaching of gammainduced-defects depends on both temperature and composition of optical fibers.
Durcissement aux radiations de fibres optiques dopées terres rares et d'amplificateurs 'a fibres optiques
2011
National audience; Cette étude vise à comprendre les effets d'une irradiation Ȗ sur les propriétés optiques et structurales des fibres dopées aux Terres Rares en vue de leur utilisation dans des amplificateurs à fibre réalisés pour des applications spatiales. L'enjeu majeur de durcissement de ces composants est abordé via des techniques telles que le chargement en hydrogène et/ou le co-dopage au Cérium du cœur des fibres optiques. L'identification des centres responsables de l'atténuation induite par irradiation et la compréhension des mécanismes de dégradation mis en jeu sont des étapes indispensables au développement de ces fibres.
Laser guns and hot plates
2005
Radiation-induced effects in silica based glasses: experimental and theoretical results
2008
Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes
2016
Under heavy-ion exposure at sufficiently high reverse bias voltages silicon carbide (SiC) Schottky diodes are observed to exhibit gradual increases in leakage current with increasing ion fluence. Heavy-ion exposure alters the overall reverse current-voltage characteristics of these diodes, leaving the forward characteristics practically unchanged. This paper discusses the charge transport mechanisms in the heavy-ion damaged SiC Schottky diodes. A macro model, describing the reverse current-voltage characteristics in the degraded SiC Schottky diodes is proposed. peerReviewed