Search results for "Radiation"
showing 10 items of 5298 documents
Ab Initio Studies of Triplet-State Properties for Organic Semiconductor Molecules
2012
Triplet–triplet annihilation (TTA) leads to a reduced efficiency of organic light-emitting diodes (OLEDs) at high current densities. Spacial confinement of the triplet excitons, which is mainly dependent on triplet energy differences, can reduce the TTA rate. Therefore, a deliberate choice of the organic semiconductor materials with particular attention to their triplet energies can help to considerably increase the device efficiency. Organic solid-state lasers are, on the other hand, efficiently quenched by singlet–triplet annihilation (STA), which is closely related to the triplet–triplet absorption of the organic semiconductors. To establish a useful set of parameters related to the proc…
Irradiation effects on the OH-related infrared absorption band in synthetic wet silica.
2007
The effects of b-irradiation on the OH-related infrared (IR) absorption band in synthetic wet silica samples have been investigated by Fourier transform infrared spectroscopy. Depending on the accumulated doses, b-irradiation affects different zones of the IR composite band at about 3670 cm 1 , assigned to the OH stretching modes of silanol groups. These modifications are independent of the original OH content. The results are discussed considering possible radiation-induced changes of the silanol bonding configuration and of the glass network. These are monitored by revealing the IR band a 2260 cm 1 , which is related to the distribution of Si–O–Si bond angle. We have identified the existence of…
Line intensities of CH3D in the Triad region: 6–10μm
2004
Abstract Line intensities of the three lowest fundamentals of the 12CH3D Triad are modeled with an RMS of 3.2% using over 2100 observed values retrieved by multispectrum fitting of enriched sample spectra recorded with two Fourier transform spectrometers. The band strengths of the Triad in units of 10−18 cm−1/(molecule cm−2) at 296 K are, respectively, 2.33 for ν6 (E) at 1161 cm−1, 1.75 for ν3 (A1) at 1307 cm−1 and 0.571 for ν5 (E) at 1472 cm−1. The total calculated absorption arising from 12CH3D Triad fundamentals is 4.65×10−18 cm−1/(molecule cm−2) at 296 K. In addition, some 740 intensities of nine hotbands are fitted to 8.1%; most of the hotband measurements belong to 2ν6−ν6 and ν3+ν6−ν3…
Modifications of optical absorption band of center in silica
2005
Abstract We report an experimental study of the modifications induced by gamma ray irradiation and by thermal treatment of both the electron paramagnetic resonance (EPR) and the optical absorption spectra of the E γ ′ center in silica. Our data show that the main g-values of E γ ′ EPR signal change as a function of the irradiation dose together with a red shift of the peak position of the absorption band around 5.8 eV attributed to the same center. Changes in the opposite direction are observed in both signals after thermal treatments. The peak position change of the optical absorption band is in quantitative agreement with the g-values shift. This strict correlation is evidence for the exi…
The role of Fe and Cu dopants in electron–hole trapping and relaxation process in congruent LiNbO3
2003
Abstract The transient optical absorption and kinetics of absorption decay is studied in undoped, Fe doped, and Cu doped LiNbO 3 crystals irradiated by pulsed electron beam. The 1.6 eV band of electron polaron trapped at antisite niobium was observed in all crystal samples. The nature of centers responsible for transient absorption is discussed. Electron polarons are shown to be less stable in LiNbO 3 :Fe compared with LiNbO 3 :Cu and undoped LiNbO 3 . It is suggested that a major part of electrons and holes created by irradiation are trapped in the vicinity of dopants.
<title>Influence of radiation defects on exciton-magnon interactions in nickel oxide</title>
2005
Influence of radiation defects on the optical absorption spectrum of nickel oxide (NiO) was studied at 6 K in the near-IR energy range of 7750-8300 cm-1 corresponding to the magnetic-dipole transition 3A 2g(F )->3T 2g(F ) at nickel sites. NiO single crystals grown by the method of chemical transport reactions on the MgO(100) substrates were irradiated by the neutron fluences up to 5x1018 cm-2. Two sharp lines were observed at the low-energy side of the band: the peak at 7805 cm-1 is assigned to the pure exciton transition, whereas the peak at 7845 cm-1, to the exciton-magnon excitation that occurs at the Brillouin zone-center (BZC). An increase of the defect concentration at higher fluences…
Double-Electron Excitations in L-edges X-ray-Absorption Spectra of W, Ir and Cs Oxide Compounds
1993
Very strong double-electron excitations have been observed for the first time in the W, Ir L 3-edge and Cs L 1,2,3-edges X-ray-absorption spectra of tungsten and iridium oxide thin films and cesium oxide containing glasses. They are expressed as peaks with a width of several electron-volts located at the absorption background above the edge. The positions of these features are in good agreement with atomic calculations in the Z+1 approximation. They can be attributed to the transitions 2p4d → 5d5d for the L 2,3-edges and 2s4d → 6p5d for the L 1-edge with the dipole selection rules for the angular and total angular momentum ΔL=±1, ΔJ=0,±1.
Photochemical generation of E′ centres from Si–H in amorphous SiO2under pulsed ultraviolet laser radiation
2006
In situ optical absorption spectroscopy was used to study the generation of E' centres () in amorphous SiO2 occurring by photo-induced breaking of Si–H groups under 4.7 eV pulsed laser radiation. The dependence on laser intensity of the defect generation rate is consistent with a two-photon mechanism for Si–H rupture, while the growth and saturation of the defects are conditioned by their concurrent annealing due to a reaction with mobile hydrogen arising from the same precursor. A rate equation is proposed to model the kinetics of the defects and is tested on experimental data.
An increased F2-laser damage in ‘wet’ silica glass due to atomic hydrogen: A new hydrogen-related E′-center
2006
Abstract A dramatic increase of F2-laser induced room temperature-stable point defects in ‘wet’ synthetic silica glass occurs when irradiation temperature is lowered to 80 K. Contrary to the predictions based on the established models of defect processes, a large part of defects induced at 80 K remains stable also at the room temperature. The intensities of the laser-induced optical absorption bands of the non-bridging oxygen hole centers (2.0 and 4.8 eV) and E′-centers (5.8 eV) are comparable to those created by neutron irradiation (1018 n/cm2). A growth of infrared absorption peak at 2237 cm−1 indicates creation of silicon hydride (SiH) groups. A study of irradiation dose dependences and …
Effects of high pressure thermal treatments in oxygen and helium atmospheres on amorphous silicon dioxide and its radiation hardness
2009
The effects of thermal treatments at similar to 400 degrees C in oxygen or helium atmospheres at similar to 180 baron the radiation hardness of amorphous SiO(2) are studied. The generation efficiency of several point defects under gamma irradiation is compared to that of the untreated material. All the effects on point defects generation here observed can be explained in terms of changes in the precursor sites. In particular it has been observed that the thermal treatments can change the precursors sites of point defects both through temperature and pressure related processes, not depending on the atmosphere, and through oxygen related processes creating oxygen excess sites. The presence of…