Search results for "Raman spectroscopy."
showing 10 items of 790 documents
Inelastic neutron and low-frequency Raman scattering in niobium-phosphate glasses: the role of spatially fluctuating elastic and elasto-optic constan…
2011
We investigate the low-frequency enhancement of vibrational excitations ('boson peak') in niobium-phosphate glasses through the combination of inelastic neutron and polarization-resolved Raman scattering. The spectra of these glasses reveal an enhancement of the vibrational density of states and of the cross section for spontaneous Raman scattering in the frequency range below 150?cm ? 1. A recent theoretical model that is based on fluctuating elastic and elasto-optic (Pockels) constants provides a unified description of the measured neutron and Raman spectra, including the depolarization ratio.
Raman Scattering in CuCl under Pressure
1999
Raman spectra of CuCl were measured under hydrostatic pressures up to 14 GPa at low temperatures (T = 5 K). The anomaly in the Raman lineshape of zincblende CuCl at frequencies near the transverse-optic (TO) mode, which consists of a broad structure with several maxima, disappears at a pressure near 3 GPa. This effect is well reproduced by a model calculation of the anharmonic coupling of the TO mode to acoustic two-phonon states (Fermi resonance). Alternative interpretations of the TO Raman anomaly in terms of local vibrational modes of Cu atoms in off-center positions are not supported by the present results. Raman spectra indicate the existence of the phase CuCl-IIa in a narrow pressure …
An interface effect in c-oriented (Y/Pr)Ba2Cu3O7 Superlattices: Raman scattering by ‘Forbidden’ phonons
1997
Abstract Raman results of ultrathin layer high Tc superlattices ( Y m Pr 1 )Ba2Cu3O7 (m = 2, 3, 4) exhibit a common feature: new peaks, absent in the bulk compounds. These peaks are attributed to oxygen B1u symmetry modes confined in the YBa2Cu3O7 layers. To explain their Raman activity a mechanism based on the asymmetry of crystal field at Y-Pr layer interfaces is proposed.
Raman scattering study of the anharmonic effects in CeO2−ynanocrystals
2007
We have studied the temperature dependence of the F2g Raman mode phonon frequency and broadening in CeO2−y nanocrystals. The phonon softening and phonon linewidth are calculated using a model which takes into account the three-and four-phonon anharmonic processes. A detailed comparison of the experimental data with theoretical calculations revealed the predominance of four-phonon anharmonic processes in the temperature dependence of the phonon energy and broadening of the nanocrystals. On the other hand, three-phonon processes dominate the temperature behavior of phonons in polycrystalline samples. The anti-Stokes/Stokes peak intensity ratio was also investigated and found to be smaller for…
First-principles phonon calculations of Fe4+impurity in SrTiO3
2012
The results of hybrid density functional theory calculations on phonons in Sr(Fe(x)Ti(1-x))O(3) solid solution within the formalism of a linear combination of atomic orbitals are presented. The phonon density of states (DOS) calculated for 6.25% Fe(4+) impurities is reported and defect-induced phonon modes are identified. Based on our calculations and group-theoretical analysis, we suggest for the first time an interpretation of experimentally observed Raman- and IR-active modes.
Two-phonon magneto-Raman scattering in quantum wells: Fröhlich interaction
1996
We have developed a theoretical model of two-phonon resonant magneto-Raman scattering in a semiconductor quantum well (QW). Frohlich electron-phonon interaction has been considered and the corresponding selection rules are derived for Faraday geometry and backscattering configuration. The resonant profiles are analyzed as a function of magnetic field and laser energy. To simplify the discussion a three-band model with parabolic masses has been used as a first approach, studying later the role of heavy-hole light-hole admixture in the scattering process. It is shown that, due to mixing effects, Frohlich interaction contributes to the two-phonon Raman spectra in the parallel (z(σ ± , σ ± ) z)…
Two-LO-Phonon Resonant Raman Scattering in II-VI Semiconductors
1996
Recently, absolute values of socond-order Raman scattering efficiency have been measured around the E 0 and E 0 + Δ 0 critical points of several II-VI semiconductor compounds. The measurements were perfomed in the z(x,x)z backscattering configuration on (001) (ZnSe and ZnTe) and (110) (CdTe) surfaces. They show strong incoming and outgoing resonances around the baud gap and larger scattering efficiencies as compaered to III-V compounds. A theoretical model which includes excitons as intermediate states in the Raman process is shown to give a very good quantitative agreement between theory and experiment. Only a small discrepancy exists, while III-V compounds the discrepancies were close to …
Raman investigation of single oxidized carbon nanotubes
2001
The oxidation process of single-walled carbon nanotubes via nitric acid treatment was followed by IR-, UV-Vis-NIR, and single bundle Raman spectroscopy. The introduction of functional, oxygen-containing groups is revealed by an additional absorption band at 1725 cm−1, characteristic of carbonyl stretch vibrations. No significant shift of the optical absorption bands could be detected after oxidation. The combination of atomic force microscopy and confocal scanning resonance-enhanced Raman microscopy was used to investigate thin bundles and, eventually, individual nanotubes in detail. These experiments enabled determination of the dependence of the Raman intensity of the G-line (around 1590 …
In-situ monitoring by Raman spectroscopy of the thermal doping of graphene and MoS2 in O-2-controlled atmosphere
2017
The effects of temperature and atmosphere (air and O2) on the doping of monolayers of graphene (Gr) on SiO2 and Si substrates, and on the doping of MoS2 multilayer flakes transferred on the same substrates have been investigated. The investigations were carried out by in situ micro-Raman spectroscopy during thermal treatments up to 430 °C, and by atomic force microscopy (AFM). The spectral positions of the G and 2D Raman bands of Gr undergo only minor changes during treatment, while their amplitude and full width at half maximum (FWHM) vary as a function of the temperature and the used atmosphere. The thermal treatments in oxygen atmosphere show, in addition to a thermal effect, an effect a…
Line mixing in the stimulated Raman spectrum of the ν1 band of SiH4 at 0.4–1.0 bar
1993
The stimulated Raman spectrum of the ν1 band of SiH4 has been recorded at 0.4 and 1.0 bar pressures and room temperature. Line mixing of the fine structure components of this spectrum was taken into account in a calculated profile by considering coupling between the main transitions and using a simple model (strong collision model, SCM) for the relaxation matrix.