Search results for "Rapping"

showing 10 items of 280 documents

The search for defects in undoped SrAl2O4 material

2019

This research project was supported financially by ERDF Project No: Nr.1.1.1.1/16/A/182 .

Materials sciencePersistent luminescenceCharge Carrier trappingPhosphor02 engineering and technology010402 general chemistry01 natural sciencesInorganic ChemistryPersistent luminescence:NATURAL SCIENCES:Physics [Research Subject Categories]Emission spectrumIrradiationElectrical and Electronic EngineeringPhysical and Theoretical ChemistrySpectroscopyCondensed matter physicsDopantOrganic ChemistryDoping021001 nanoscience & nanotechnologyAtomic and Molecular Physics and Optics0104 chemical sciencesElectronic Optical and Magnetic MaterialsAfterglowUndoped strontium aluminate0210 nano-technologyLuminescenceOptical Materials
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Photoconductive properties of Bi2S3nanowires

2015

The photoconductive properties of Bi2S3 nanowires synthesized inside anodized alumina (AAO) membrane have been characterized as a function of illuminating photon energy between the wavelengths of 500 to 900 nm and at constant illumination intensity of 1–4 μW·cm−2. Photoconductivity spectra, photocurrent values, photocurrent onset/decay times of individual Bi2S3 nanowires liberated from the AAO membrane were determined and compared with those of arrays of as-produced Bi2S3 nanowires templated inside pores of AAO membrane. The alumina membrane was found to significantly influence the photoconductive properties of the AAO-hosted Bi2S3 nanowires, when compared to liberated from the AAO membrane…

Materials sciencePhotoconductivityPHOTODETECTORSThin filmsPhotoconductivity spectrumAluminaNanowireGeneral Physics and AstronomyNanotechnologySemiconductor growth02 engineering and technology010402 general chemistryNanofabrication01 natural sciencesSemiconductor materialsTHIN-FILMSThin filmONE-DIMENSIONAL NANOSTRUCTURESArraysPhotocurrentOne-dimensional nanostructuresMembranesNanowire surfaceNanowiresbusiness.industryAnodizingPhotoconductivityPhotodetectors021001 nanoscience & nanotechnologyCharge carrier trappingARRAYS0104 chemical sciencesMembraneNanolithographyIllumination intensityAnodized aluminaPhotoconductive propertiesSemiconductor quantum wiresOptoelectronicsAlumina membranesCharge carrierElectron trapsPhoton energy0210 nano-technologybusinessBismuth compoundsJournal of Applied Physics
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Broadband light trapping in thin film solar cells with self-organized plasmonic nano-colloids

2015

The intense light scattered from metal nanoparticles sustaining surface plasmons makes them attractive for light trapping in photovoltaic applications. However, a strong resonant response from nanoparticle ensembles can only be obtained if the particles have monodisperse physical properties. Presently, the chemical synthesis of colloidal nanoparticles is the method that produces the highest monodispersion in geometry and material quality, with the added benefits of being low-temperature, low-cost, easily scalable and of allowing control of the surface coverage of the deposited particles. In this paper, novel plasmonic back-reflector structures were developed using spherical gold colloids wi…

Materials sciencePhotovoltaics light trapping plasmonics Mie scatterers thin film silicon solar cells.NanoparticlePhysics::OpticsBioengineeringMie scatterersMie scattererSettore ING-INF/01 - Elettronica7. Clean energyLight scatteringplasmonicsthin film silicon solar cellsMechanics of MaterialGeneral Materials SciencePlasmonic solar cellElectrical and Electronic EngineeringThin filmPlasmonbusiness.industryScatteringMechanical EngineeringChemistry (all)Surface plasmonNanocrystalline siliconGeneral ChemistryPlasmonicThin film silicon solar cellphotovoltaicsMechanics of MaterialsOptoelectronicslight trappingMaterials Science (all)businessPhotovoltaic
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Lifetime and collisional depopulation of the metastable 5D 3/2-state of Yb+

1988

The lifetime and collisional depopulation rates of the metastable 5D 3/2 state of Yb+ have been determined in a radiofrequency ion trap by observation of the fluorescence count rate after ion excitation by a short laser pulse. From measurements using He, N2 and H2 as buffer gases between 10−8 and 10−6 mbar pressure and linear extrapolation to zero pressure we obtain a lifetime of τ=52.15±1.00 ms and rate constants ofR(H2)=(1.02±0.10)×10−9 cm3/s andR(N2)=(1.78±0.19)×10−10 cm3/s. The lifetime is in fair agreement with a calculated value of 74 ms.

Materials scienceReaction rate constantlawMetastabilityExtrapolationIon trapAtomic physicsLaserIon trappingAtomic and Molecular Physics and OpticsExcitationIonlaw.inventionZeitschrift f�r Physik D Atoms, Molecules and Clusters
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Surface Acoustic Wave Sensors for the Detection of Hazardous Compounds in Indoor Air

2017

Presented at the Eurosensors 2017 Conference, Paris, France, 3–6 September 2017.; International audience; In this work, the authors show the capabilities of Surface Acoustic Wave (SAW) devices coupled with various absorbents to probe the properties of gas sensitive materials for the manufacturing of hazardous gas sensors. The great capabilities of cobalt corroles for the trapping of carbon monoxide (CO) were exploited to produce selective sensors. These corroles were deposited on SAW delay lines surfaces and then exposed to carbon monoxide (CO) in standard conditions. Concentrations of a few hundreds of ppb were measured emphasizing the interest of such sensors for the detection of CO. Anot…

Materials scienceSAWIndoor airchemistry.chemical_elementlcsh:ANanotechnologyTrapping010402 general chemistry01 natural sciencescarbon monoxidechemistry.chemical_compoundHazardous wastePorositySurface acoustic wave[CHIM.MATE]Chemical Sciences/Material chemistry06 humanities and the artsNano-porous films060202 literary studies0104 chemical sciencescobalt corroleschemistry[ CHIM.MATE ] Chemical Sciences/Material chemistry0602 languages and literatureformaldehydeSurface acoustic wave sensorlcsh:General WorksCobaltLove wavesCarbon monoxideProceedings of Eurosensors 2017, Paris, France, 3–6 September 2017
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Trapped metal cluster ions

1995

An overview is given of experiments with stored metal cluster ions in a Penning trap system. The setup allows axial injection of clusters produced in an external source and a time-of-flight mass analysis of the reaction products after axial ejection. The system's options include the selection of stored ions, the manipulation of their orbits, addition of reactant and buffer gases and axial optical access for laser spectroscopic studies. As described by various examples, investigations have been made with respect to the development of trapping techniques and the characterization of metal clusters in terms of their physical and chemical properties.

Materials scienceTrappingCondensed Matter PhysicsLaserPenning trapAtomic and Molecular Physics and OpticsBuffer (optical fiber)Characterization (materials science)law.inventionIonMetallawvisual_artCluster (physics)visual_art.visual_art_mediumAtomic physicsMathematical PhysicsPhysica Scripta
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Electronic Properties of Point Defects in Metals

1982

Recent progress in electronic structure and related properties of point defects in metals is reviewed. Topics discussed include transition metal impurities in a non-magnetic host, construction of potential energy surfaces from effective-medium theories, trapping of light interstitials, and pair potential in metals.

Materials scienceTrappingElectronic structureCondensed Matter PhysicsPotential energyCrystallographic defectAtomic and Molecular Physics and OpticsTransition metalChemical physicsImpurityCondensed Matter::Strongly Correlated ElectronsAtomic physicsPair potentialMathematical PhysicsElectronic propertiesPhysica Scripta
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Hot carrier effects in n-MOSFETs with SiO2/HfO2/HfSiO gate stack and TaN metal gate

2009

Charge trapping and trap generation in field-effect transistors with SiO2/HfO2/HfSiO gate stack and TaN metal gate electrode are investigated under uniform and non-uniform charge injection along the channel. Compared to constant voltage stress (CVS), hot carrier stress (HCS) exhibits more severe degradation in transconductance and subthreshold swing. By applying a detrapping bias, it is demonstrated that charge trapping induced degradation is reversible during CVS, while the damage is permanent for hot carrier injection case. © 2008 Elsevier B.V. All rights reserved.

Materials sciencebusiness.industryTransconductanceTransistorTrappingCondensed Matter PhysicsSettore ING-INF/01 - ElettronicaAtomic and Molecular Physics and OpticsSurfaces Coatings and FilmsElectronic Optical and Magnetic Materialslaw.inventionStress (mechanics)lawElectrodeOptoelectronicsDegradation (geology)High-k dielectrics Hot carrier stress Constant voltage stressElectrical and Electronic EngineeringMetal gatebusinessHot-carrier injection
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TSL and fractional glow study of Ge-doped α-quartz

2013

Crystalline α-quartz doped with 0.1wt% and 0.9wt% germanium was studied using TSL and FGT equipment. Sample was chosen because previously it is known that Ge in quartz is efficient trap for electrons, therefore it could be used for detection of hypothetic self-trapped hole in α-quartz. However previous investigations of ODMR and TSL shows that in α-quartz the hole is still mobile and trapping occurs only on defect states. The activation energies for both TSL peaks are found by fractional glow and Hoogenstraaten method. The TSL distribution changes depending on Ge concentration and also on irradiation type. The TSL peaks below 70K in quartz doped with Ge could belong to hole trapped on Ge.

Materials sciencechemistryDopingAnalytical chemistrychemistry.chemical_elementGermaniumTrappingElectronIrradiationQuartzIOP Conference Series: Materials Science and Engineering
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Low Temperature Afterglow from SrAl <sub>2</sub>O <sub>4</sub>: EU, Dy, B Containing Glass

2020

SrAl2O4: Eu, Dy, B particles were added in a phosphate glass (90NaPO3-10NaF (in mol%)) using the direct doping method. For the first time, the composition of the particles prior to and after embedding them in the glass was analysed using EPMA analysis. Boron was found to be incorporated in already distorted surroundings creating new trapping centers in the particles which are thought to be favourable for the tunnelling process and so for the afterglow at 10K. Despite the partial decomposition of the particles, the glass exhibit afterglow at low temperature confirming to be promising materials for low temperature applications.

Materials sciencechemistryDopingAnalytical chemistrychemistry.chemical_elementPartial decompositionTrappingElectron microprobeBoronQuantum tunnellingPhosphate glassAfterglowSSRN Electronic Journal
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