Search results for "Resist"

Reduced temperature sensitivity of multicrystalline silicon solar cells with low ingot resistivity

2016

This study presents experimental data on the reduction of temperature sensitivity of multicrystalline silicon solar cells made from low resistivity ingot. The temperature coefficients of solar cells produced from different ingot resistivities are compared, and the advantages of increasing the net doping are explained.

2018

Damping distances of surface plasmon polariton modes sustained by different thin titanium nitride (TiN) films are measured at the telecom wavelength of 1.55 μm. The damping distances are correlated to the electrical direct current resistivity of the films sustaining the surface plasmon modes. It is found that TiN/Air surface plasmon mode damping distances drop non-linearly from 40 to 16μm as the resistivity of the layers increases from 28 to 130μΩ.cm, respectively. The relevance of the direct current (dc) electrical resistivity for the characterization of TiN plasmonic properties is investigated in the framework of the Drude model, on the basis of parameters extracted from spectroscopic ell…

High-Performance Flexible Magnetic Tunnel Junctions for Smart Miniaturized Instruments

2018

Multi-pulse characterization of trapping/detrapping mechanisms in AlGaN/GaN high electromobility transistors

2019

GaN high-electro mobility transistors (HEMTs) are among the most promising candidates for use in high-power, high-frequency, and high-temperature electronics owing to their high electrical breakdown threshold and their high saturation electron velocity. The applications of these AlGaN/GaN HEMTs in power converters are limited by the surface trapping effects of drain-current collapse. Charge-trapping mechanisms affect the dynamic performance of all GaN HEMTs used in power switching applications. This study analyzes the dynamic resistance of GaN HEMTs and finds that the effects of dynamic resistance can be suppressed by controlling switching conditions and on-off cycles.

Electrical Modeling of Monolithically Integrated GMR Based Current Sensors

2018

We report on the electrical compact model, using Verilog-A, of a monolithically integrated giant magnetoresistance (GMR) based electrical current sensors. For this purpose, a specifically designed ASIC (AMS $0.35\mu \mathrm{m}$ technology) has been considered, onto which such sensors have been patterned and fabricated, following a two-steps procedure. This work is focused on the DC regime model extraction, giving evidences of its good performance and stating the bases for subsequent model improvements.

Ab initio modelling of the Y, O, and Ti solute interaction in fcc-Fe matrix

2018

Abstract Strengthening of the ODS steels by Y2O3 precipitates permits to increase their operation temperature and radiation resistance, which is important in construction materials for future fusion and advanced fission reactors. Both size and spatial distribution of oxide particles significantly affect mechanical properties and radiation resistance of ODS steels. Addition of the Ti species (present also as a natural impurity atoms in iron lattice) in the particles of Y2O3 powder before their mechanical alloying leads to the formation of YTiO3, Y2TiO5, and Y2Ti2O7 nanoparticles in ODS steels. Modelling of these nanoparticle formation needs detailed knowledge of the energetic interactions be…

Radiation resistance of nanolayered silicon nitride capacitors

2020

Abstract Single-layered and multi-layered 20–60 nm thick silicon nitride (Si3N4) dielectric nanofilms were fabricated using a low-pressure chemical vapour deposition (LPCVD) method. The X-ray photoelectron spectroscopy (XPS) confirmed less oxygen content in the multi-layered nanofilms. The capacitors with Si3N4 multilayer demonstrated a tendency to a higher breakdown voltage compared to the capacitors with Si3N4 single layer. Si3N4 nanofilms and capacitors with Si3N4 dielectric were exposed to 1 kGy dose of gamma photons. Fourier transform infrared (FTIR) spectroscopy analysis showed that no modifications of the chemical bonds of Si3N4 were present after irradiation. Also, gamma irradiation…

Single crystal-like thin films of blue bronze

2021

Abstract Pulsed laser deposition technique was employed to grow thin films of K 0.3 M o O 3 on A l 2 O 3 (1-102) and S r T i O 3 (510) substrates. Structural and imaging characterization revealed good quality films with well oriented grains of few microns in length. Both non-selective (transport) and order-selective (femtosecond pump-probe spectroscopy) probes revealed charge density wave properties that are very close to those of the single crystals. The films exhibit metal-semiconductor phase transition in resistivity, pump-probe data show phase transition at the same temperature as the single crystal and the threshold for the photo-induced phase transition is approximately the same as in…

Microfabricated high temperature sensing platform dedicated to scanning thermal microscopy (SThM)

2018

Abstract The monitoring of heat flux is becoming more and more critical for many materials and structures approaching nanometric dimensions. Scanning Thermal Microscopy (SThM) is one of the tools available for thermal measurement at the nanoscale and requires calibration. Here we report on a micro-hotplate device made of a platinum heater suspended on thin silicon nitride (SiN) membranes integrating specific features for SThM calibration. These heated reference samples can include a localized resistive temperature sensors (RTD) or standalone platinum membranes (typically 10 × 10 μm2) on which the temperature can be measured precisely. This functional area is dedicated to (1) estimate the th…

Measurement of the activation energies of oxygen ion diffusion in yttria stabilized zirconia by flicker noise spectroscopy

2019

The low-frequency noise in a nanometer-sized virtual memristor consisting of a contact of a conductive atomic force microscope (CAFM) probe to an yttria stabilized zirconia (YSZ) thin film deposited on a conductive substrate is investigated. YSZ is a promising material for the memristor application since it is featured by high oxygen ion mobility, and the oxygen vacancy concentration in YSZ can be controlled by varying the molar fraction of the stabilizing yttrium oxide. Due to the low diameter of the CAFM probe contact to the YSZ film (similar to 10nm), we are able to measure the electric current flowing through an individual filament both in the low resistive state (LRS) and in the high r…