Search results for "Resistivity"

Electrical transport in lead-free (Na0.5Bi0.5)1–xSrxTiO3 ceramics (x = 0, 0.01 and 0.02)

2017

Lead-free (Na0.5Bi0.5)1xSrxTiO3 (x = 0, 0.01 and 0.02) ceramics were manufactured through a solid-state mixed oxide method and their ac (σac) and dc (σdc) electric conductivity were studied. It is ...

2018

CrN thin films with an N/Cr ratio of 95% were deposited by reactive magnetron sputtering onto (0 0 0 1) sapphire substrates. X-ray diffraction and pole figure texture analysis show CrN (1 1 1) epitaxial growth in a twin domain fashion. By changing the nitrogen versus argon gas flow mixture and the deposition temperature, thin films with different surface morphologies ranging from grainy rough textures to flat and smooth films were prepared. These parameters can also affect the CrN x system, with the film compound changing between semiconducting CrN and metallic Cr2N through the regulation of the nitrogen content of the gas flow and the deposition temperature at a constant deposition pressur…

Flash annealing influence on structural and electrical properties of TiO2/TiO/Ti periodic multilayers

2014

Abstract Multilayered structures with a 40 nm period composed of titanium and two different titanium oxides, TiO and TiO 2 , were accurately produced by DC magnetron sputtering using the reactive gas pulsing process. These multilayers were sputtered onto Al 2 O 3 sapphire to avoid substrate compound diffusion during flash annealing (ranging from 350 °C to 550 °C). Structure and composition of these periodic TiO 2 /TiO/Ti stacks were investigated by X-ray diffraction, X-ray photoemission spectroscopy and transmission electronic microscopy techniques. Two crystalline phases α-Ti and fcc-TiO were identified in the metallic-rich sub-layers whereas the oxygen-rich ones were composed of a mixture…

Hole localization in thermoelectric half-Heusler (Zr0.5Hf0.5)Co(Sb1−xSn ) thin films

2019

Abstract The (Ti, Zr, Hf)Co(Sb 1 − x Snx) material class has recently come into focus as an attractive p-type high-temperature thermoelectric material. This study experimentally demonstrates that homogeneous, highly textured (Zr0.5Hf0.5)Co(Sb 1 − x Snx) thin films can be grown on single crystalline MgO. By varying the sputter power, samples with both positive and negative Seebeck coefficient can be grown. The underlying reason for the sign change is the segregation of Sn nano-inclusions, which lower the effective doping of the half-Heusler matrix. Similarly the Hall constant also switches sign at low temperatures, which is modeled assuming semi-metal behavior and low temperature hole locali…

Electrical and thermomechanical properties of CVI- Si3N4 porous rice husk ash infiltrated by Al-Mg-Si alloys

2017

Abstract The effect of following processing parameters on the electrical and thermomechanical properties of Al/Si3N4 deposited silica composites was investigated using the Taguchi method and analysis of variance (ANOVA): infiltration temperature and time, atmosphere, effect of Si3N4 coating, porosity content in the preforms, and magnesium content in the alloy. The contributions of each of the parameters to modulus of elasticity, electrical resistivity, coefficient of thermal expansion (CTE), and thermal diffusivity of the resulting composites were determined. The maximum modulus of elasticity and electrical resistivity of obtained composites were 265 GPa, and 1.37 × 10−3 Ω m, respectively. …

The interdependence of structural and electrical properties in TiO2/TiO/Ti periodic multilayers

2013

International audience; Multilayered structures with 14-50 nm periods composed of titanium and two different titanium oxides, TiO and TiO2, were accurately produced by DC magnetron sputtering using the reactive gas pulsing process. The structure and composition of these periodic TiO2/TiO/Ti stacks were investigated by X-ray diffraction and transmission electronic microscopy techniques. Two crystalline phases, hexagonal close packed Ti and face centred cubic TiO, were identified in the metallic-rich sub-layers, whereas the oxygen-rich ones comprised a mixture of amorphous TiO2 and rutile phase. DC electrical resistivity rho measured for temperatures ranging from 300 to 500 K exhibited a meta…

Reduced temperature sensitivity of multicrystalline silicon solar cells with low ingot resistivity

2016

This study presents experimental data on the reduction of temperature sensitivity of multicrystalline silicon solar cells made from low resistivity ingot. The temperature coefficients of solar cells produced from different ingot resistivities are compared, and the advantages of increasing the net doping are explained.

2018

Damping distances of surface plasmon polariton modes sustained by different thin titanium nitride (TiN) films are measured at the telecom wavelength of 1.55 μm. The damping distances are correlated to the electrical direct current resistivity of the films sustaining the surface plasmon modes. It is found that TiN/Air surface plasmon mode damping distances drop non-linearly from 40 to 16μm as the resistivity of the layers increases from 28 to 130μΩ.cm, respectively. The relevance of the direct current (dc) electrical resistivity for the characterization of TiN plasmonic properties is investigated in the framework of the Drude model, on the basis of parameters extracted from spectroscopic ell…

Single crystal-like thin films of blue bronze

2021

Abstract Pulsed laser deposition technique was employed to grow thin films of K 0.3 M o O 3 on A l 2 O 3 (1-102) and S r T i O 3 (510) substrates. Structural and imaging characterization revealed good quality films with well oriented grains of few microns in length. Both non-selective (transport) and order-selective (femtosecond pump-probe spectroscopy) probes revealed charge density wave properties that are very close to those of the single crystals. The films exhibit metal-semiconductor phase transition in resistivity, pump-probe data show phase transition at the same temperature as the single crystal and the threshold for the photo-induced phase transition is approximately the same as in…

Controlled thermal oxidation of nanostructured vanadium thin films

2016

Abstract Pure V thin films were dc sputtered with different pressures (0.4 and 0.6 Pa) and particle incident angles α of 0°, 20° and 85°, by using the GLancing Angle Deposition (GLAD) technique. The sputtered films were characterized regarding their electrical resistivity behaviour in atmospheric pressure and in-vacuum conditions as a function of temperature (40–550 °C), in order to control the oxidation process. Aiming at comprehending the oxidation behaviour of the samples, extensive morphological and structural studies were performed on the as-deposited and annealed samples. Main results show that, in opposition to annealing in air, the columnar nanostructures are preserved in vacuum con…